FR3001097A1 - Dispositif de commutation avec diviseur resistif - Google Patents

Dispositif de commutation avec diviseur resistif Download PDF

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Publication number
FR3001097A1
FR3001097A1 FR1450111A FR1450111A FR3001097A1 FR 3001097 A1 FR3001097 A1 FR 3001097A1 FR 1450111 A FR1450111 A FR 1450111A FR 1450111 A FR1450111 A FR 1450111A FR 3001097 A1 FR3001097 A1 FR 3001097A1
Authority
FR
France
Prior art keywords
switching device
resistive divider
fet
resistor
fets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR1450111A
Other languages
English (en)
Inventor
Ravishankar Prabhakar
Jr James P Furino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of FR3001097A1 publication Critical patent/FR3001097A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electronic Switches (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Des modes de réalisation proposent un dispositif de commutation comprenant un ou plusieurs transistors à effet de champ (FET) (104). Dans des modes de réalisation, un diviseur résistif (132) comprenant une première résistance (136) et une seconde résistance (140) peut être couplé au FET à une position électriquement entre une borne de grille (120) du FET et une borne de corps (124) du FET.
FR1450111A 2013-01-15 2014-01-08 Dispositif de commutation avec diviseur resistif Withdrawn FR3001097A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/742,086 US8847672B2 (en) 2013-01-15 2013-01-15 Switching device with resistive divider

Publications (1)

Publication Number Publication Date
FR3001097A1 true FR3001097A1 (fr) 2014-07-18

Family

ID=51031600

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1450111A Withdrawn FR3001097A1 (fr) 2013-01-15 2014-01-08 Dispositif de commutation avec diviseur resistif

Country Status (7)

Country Link
US (1) US8847672B2 (fr)
JP (1) JP6574549B2 (fr)
KR (1) KR102110615B1 (fr)
CN (1) CN103929163B (fr)
FR (1) FR3001097A1 (fr)
IL (1) IL230314A (fr)
TW (1) TWI608700B (fr)

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US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US9203396B1 (en) * 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
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US11320158B2 (en) * 2017-05-11 2022-05-03 Coway Co., Ltd. Multifunctional circulation system enabling purification of outside air
CN109150150A (zh) * 2018-08-06 2019-01-04 上海华虹宏力半导体制造有限公司 一种可改善射频开关特性的射频开关电路
WO2020113175A2 (fr) * 2018-11-29 2020-06-04 OctoTech, Inc. Limiteur de puissance rf cmos et circuits de protection contre les décharges électrostatiques
JP7337561B2 (ja) * 2019-06-25 2023-09-04 ローム株式会社 アナログスイッチ回路、ボリウム回路、半導体集積回路
US11585844B1 (en) * 2021-09-09 2023-02-21 Board Of Regents, The University Of Texas System Systems, circuits, and methods to detect gate-open failures in MOS based insulated gate transistors

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Also Published As

Publication number Publication date
KR20140092256A (ko) 2014-07-23
US20140197882A1 (en) 2014-07-17
TW201429161A (zh) 2014-07-16
TWI608700B (zh) 2017-12-11
KR102110615B1 (ko) 2020-05-28
JP2014138423A (ja) 2014-07-28
IL230314A (en) 2016-06-30
JP6574549B2 (ja) 2019-09-11
CN103929163A (zh) 2014-07-16
US8847672B2 (en) 2014-09-30
CN103929163B (zh) 2019-03-22
IL230314A0 (en) 2014-08-31

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