FR2979479B1 - Composition de verre pour proteger une jonction semi-conductrice, procede de fabrication d'un dispositif a semi-conducteur, et dispositif a semi-conducteur - Google Patents

Composition de verre pour proteger une jonction semi-conductrice, procede de fabrication d'un dispositif a semi-conducteur, et dispositif a semi-conducteur Download PDF

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Publication number
FR2979479B1
FR2979479B1 FR1258062A FR1258062A FR2979479B1 FR 2979479 B1 FR2979479 B1 FR 2979479B1 FR 1258062 A FR1258062 A FR 1258062A FR 1258062 A FR1258062 A FR 1258062A FR 2979479 B1 FR2979479 B1 FR 2979479B1
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FR
France
Prior art keywords
semiconductor device
glass composition
protecting
junction
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1258062A
Other languages
English (en)
Other versions
FR2979479A1 (fr
Inventor
Atsushi Ogasawara
Kazuhiko Ito
Koji Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Publication of FR2979479A1 publication Critical patent/FR2979479A1/fr
Application granted granted Critical
Publication of FR2979479B1 publication Critical patent/FR2979479B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
FR1258062A 2011-08-29 2012-08-29 Composition de verre pour proteger une jonction semi-conductrice, procede de fabrication d'un dispositif a semi-conducteur, et dispositif a semi-conducteur Active FR2979479B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011069448 2011-08-29
PCT/JP2011/069448 WO2013030922A1 (fr) 2011-08-29 2011-08-29 Composition de verre pour protection de jonction de semi-conducteur, procédé de production de dispositif semi-conducteur et dispositif semi-conducteur

Publications (2)

Publication Number Publication Date
FR2979479A1 FR2979479A1 (fr) 2013-03-01
FR2979479B1 true FR2979479B1 (fr) 2018-09-28

Family

ID=47693200

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1258062A Active FR2979479B1 (fr) 2011-08-29 2012-08-29 Composition de verre pour proteger une jonction semi-conductrice, procede de fabrication d'un dispositif a semi-conducteur, et dispositif a semi-conducteur

Country Status (6)

Country Link
US (1) US9006113B2 (fr)
JP (1) JP5548276B2 (fr)
CN (1) CN103748667B (fr)
FR (1) FR2979479B1 (fr)
TW (1) TWI466288B (fr)
WO (1) WO2013030922A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5508547B1 (ja) * 2012-05-08 2014-06-04 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
EP2858098B1 (fr) 2012-05-08 2020-12-02 Shindengen Electric Manufacturing Co., Ltd. Procédé de production de dispositif semi-conducteur scellé à la résine
US9236318B1 (en) * 2013-03-29 2016-01-12 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
KR101581666B1 (ko) * 2014-06-10 2015-12-31 한국세라믹기술원 세라믹 부재의 재생을 위한 유리 하드코팅제 조성물을 이용한 세라믹 부재의 재생방법
CN107533976B (zh) * 2014-10-31 2020-12-22 新电元工业株式会社 半导体装置的制造方法以及抗蚀玻璃
KR101851884B1 (ko) * 2014-11-13 2018-04-24 신덴겐코교 가부시키가이샤 반도체 장치의 제조 방법 및 유리 피막 형성 장치
CN108191449B (zh) * 2018-01-03 2021-04-27 上海富乐华半导体科技有限公司 一种铜-氧化铝陶瓷基板及其制备方法
JP7216323B2 (ja) * 2019-01-29 2023-02-01 日本電気硝子株式会社 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料
CN110620139A (zh) * 2019-09-03 2019-12-27 常山弘远电子有限公司 一种ac-dc高压续流二极管芯片结构

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202742A (en) * 1981-06-09 1982-12-11 Toshiba Corp Glass for semiconductor coating
JPS59174544A (ja) 1983-03-25 1984-10-03 Nippon Electric Glass Co Ltd 半導体被覆用ガラス
JPH02163938A (ja) 1988-12-16 1990-06-25 Fuji Electric Co Ltd 半導体素子の製造方法
DE4124515A1 (de) 1991-07-24 1993-01-28 Vdo Schindling Verfahren zum ueberwachen und verstellanordnung fuer die betaetigung eines verstellorgans einer steuerung einer verbrennungskraftmaschine
JPH1186629A (ja) 1997-09-12 1999-03-30 Mitsubishi Electric Corp イオン伝導性材料、その製造方法およびそれを用いた電池
US6214699B1 (en) * 1998-04-01 2001-04-10 Texas Instruments Incorporated Method for forming an isolation structure in a substrate
US7740899B2 (en) * 2002-05-15 2010-06-22 Ferro Corporation Electronic device having lead and cadmium free electronic overglaze applied thereto
JP4022113B2 (ja) 2002-08-28 2007-12-12 新電元工業株式会社 半導体装置の製造方法及び半導体装置
US7030048B2 (en) * 2003-08-05 2006-04-18 E. I. Du Pont De Nemours And Company Thick film dielectric compositions for use on aluminum nitride substrates
DE102005031658B4 (de) * 2005-07-05 2011-12-08 Schott Ag Bleifreies Glas für elektronische Bauelemente
US20070154713A1 (en) * 2005-12-30 2007-07-05 3M Innovative Properties Company Ceramic cutting tools and cutting tool inserts, and methods of making the same
DE102006062428B4 (de) * 2006-12-27 2012-10-18 Schott Ag Verfahren zur Herstellung eines mit einem bleifreien Glas passiviertenelektronischen Bauelements sowie elektronisches Bauelement mit aufgebrachtem bleifreien Glas und dessen Verwendung
JP5128203B2 (ja) * 2007-08-22 2013-01-23 日本山村硝子株式会社 封着用ガラス組成物
JP5683778B2 (ja) 2008-09-29 2015-03-11 日本山村硝子株式会社 無鉛無ビスマスガラス組成物
JP2010280554A (ja) * 2009-06-08 2010-12-16 Nippon Electric Glass Co Ltd 色素増感型太陽電池用ガラスおよび色素増感型太陽電池用材料
WO2011093177A1 (fr) * 2010-01-28 2011-08-04 日本電気硝子株式会社 Verre pour revêtement de semi-conducteur et matériau pour revêtement de semi-conducteur l'utilisant
JP2012012231A (ja) * 2010-06-29 2012-01-19 Central Glass Co Ltd 無鉛低融点ガラス組成物

Also Published As

Publication number Publication date
US20130154064A1 (en) 2013-06-20
CN103748667A (zh) 2014-04-23
WO2013030922A1 (fr) 2013-03-07
TWI466288B (zh) 2014-12-21
US9006113B2 (en) 2015-04-14
JP5548276B2 (ja) 2014-07-16
CN103748667B (zh) 2016-09-14
FR2979479A1 (fr) 2013-03-01
JPWO2013030922A1 (ja) 2015-03-23
TW201320332A (zh) 2013-05-16

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