JP7216323B2 - 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 - Google Patents
半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Download PDFInfo
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- JP7216323B2 JP7216323B2 JP2019012914A JP2019012914A JP7216323B2 JP 7216323 B2 JP7216323 B2 JP 7216323B2 JP 2019012914 A JP2019012914 A JP 2019012914A JP 2019012914 A JP2019012914 A JP 2019012914A JP 7216323 B2 JP7216323 B2 JP 7216323B2
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- JP
- Japan
- Prior art keywords
- glass
- sio
- zno
- content
- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Description
表1は、本発明の実施例(試料No.1~4)と比較例(試料No.5~8)を示している。
Claims (3)
- ガラス組成として、モル%で、SiO2+ZnO 40~65%、B2O3 7~25%、Al2O3 15~21%、MgO 8~22%を含有し、且つモル比で、SiO2/ZnOが0.6~1.8未満であり、実質的に鉛成分を含有しないことを特徴とする半導体素子被覆用ガラス。
- 請求項1に記載の半導体素子被覆用ガラスからなるガラス粉末 75~100質量%、セラミック粉末 0~25質量%を含有することを特徴とする半導体素子被覆用材料。
- 30~300℃の温度範囲における熱膨張係数が20×10-7/℃~55×10-7/℃であることを特徴とする請求項2に記載の半導体素子被覆用材料。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019012914A JP7216323B2 (ja) | 2019-01-29 | 2019-01-29 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
PCT/JP2019/047810 WO2020158187A1 (ja) | 2019-01-29 | 2019-12-06 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
TW109100840A TWI809240B (zh) | 2019-01-29 | 2020-01-10 | 半導體元件被覆用玻璃及使用其之半導體被覆用材料 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019012914A JP7216323B2 (ja) | 2019-01-29 | 2019-01-29 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020121893A JP2020121893A (ja) | 2020-08-13 |
JP7216323B2 true JP7216323B2 (ja) | 2023-02-01 |
Family
ID=71841307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019012914A Active JP7216323B2 (ja) | 2019-01-29 | 2019-01-29 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7216323B2 (ja) |
TW (1) | TWI809240B (ja) |
WO (1) | WO2020158187A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024004711A1 (ja) * | 2022-06-29 | 2024-01-04 | 日本電気硝子株式会社 | 半導体素子被覆用ガラス、半導体素子被覆用材料、及び半導体素子被覆用焼結体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012051761A (ja) | 2010-09-01 | 2012-03-15 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
WO2013030922A1 (ja) | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2018026402A1 (en) | 2016-08-03 | 2018-02-08 | Ferro Corporation | Passivation glasses for semiconductor devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03126639A (ja) * | 1989-10-06 | 1991-05-29 | Nippon Electric Glass Co Ltd | 被覆用ガラス組成物 |
CN104025267B (zh) * | 2012-05-08 | 2017-02-15 | 新电元工业株式会社 | 树脂封装型半导体装置以及树脂封装型半导体装置的制造方法 |
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2019
- 2019-01-29 JP JP2019012914A patent/JP7216323B2/ja active Active
- 2019-12-06 WO PCT/JP2019/047810 patent/WO2020158187A1/ja active Application Filing
-
2020
- 2020-01-10 TW TW109100840A patent/TWI809240B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012051761A (ja) | 2010-09-01 | 2012-03-15 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
WO2013030922A1 (ja) | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2018026402A1 (en) | 2016-08-03 | 2018-02-08 | Ferro Corporation | Passivation glasses for semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
WO2020158187A1 (ja) | 2020-08-06 |
TW202045451A (zh) | 2020-12-16 |
TWI809240B (zh) | 2023-07-21 |
JP2020121893A (ja) | 2020-08-13 |
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