FR2795411B1 - 9-anthraldehydeoxim(meth)acrylates, procede de preparation et polymeres qu'ils permettent de preparer - Google Patents

9-anthraldehydeoxim(meth)acrylates, procede de preparation et polymeres qu'ils permettent de preparer

Info

Publication number
FR2795411B1
FR2795411B1 FR0007853A FR0007853A FR2795411B1 FR 2795411 B1 FR2795411 B1 FR 2795411B1 FR 0007853 A FR0007853 A FR 0007853A FR 0007853 A FR0007853 A FR 0007853A FR 2795411 B1 FR2795411 B1 FR 2795411B1
Authority
FR
France
Prior art keywords
anthraldehydeoxim
acrylates
meth
polymers
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0007853A
Other languages
English (en)
Other versions
FR2795411A1 (fr
Inventor
Min Ho Jung
Sung Eun Hong
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2795411A1 publication Critical patent/FR2795411A1/fr
Application granted granted Critical
Publication of FR2795411B1 publication Critical patent/FR2795411B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/32—Oximes
    • C07C251/62—Oximes having oxygen atoms of oxyimino groups esterified
    • C07C251/64—Oximes having oxygen atoms of oxyimino groups esterified by carboxylic acids
    • C07C251/66—Oximes having oxygen atoms of oxyimino groups esterified by carboxylic acids with the esterifying carboxyl groups bound to hydrogen atoms, to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerization Catalysts (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
FR0007853A 1999-06-22 2000-06-20 9-anthraldehydeoxim(meth)acrylates, procede de preparation et polymeres qu'ils permettent de preparer Expired - Fee Related FR2795411B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990023382A KR100310252B1 (ko) 1999-06-22 1999-06-22 유기 반사방지 중합체 및 그의 제조방법

Publications (2)

Publication Number Publication Date
FR2795411A1 FR2795411A1 (fr) 2000-12-29
FR2795411B1 true FR2795411B1 (fr) 2004-01-30

Family

ID=19594043

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0007853A Expired - Fee Related FR2795411B1 (fr) 1999-06-22 2000-06-20 9-anthraldehydeoxim(meth)acrylates, procede de preparation et polymeres qu'ils permettent de preparer

Country Status (10)

Country Link
US (3) US6388039B1 (fr)
JP (2) JP3920537B2 (fr)
KR (1) KR100310252B1 (fr)
CN (1) CN1224610C (fr)
DE (1) DE10028345A1 (fr)
FR (1) FR2795411B1 (fr)
GB (1) GB2351288B (fr)
IT (1) IT1320274B1 (fr)
NL (1) NL1015471C2 (fr)
TW (1) TW553923B (fr)

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KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR20020090584A (ko) * 2001-05-28 2002-12-05 주식회사 동진쎄미켐 유기 반사 방지막용 고분자 수지, 및 이를 이용하는ＫｒＦ 포토레지스트용 유기 반사 방지막 조성물
US6893684B2 (en) * 2001-06-05 2005-05-17 Brewer Science Inc. Anti-reflective coating compositions for use with low k dielectric materials
US6670425B2 (en) 2001-06-05 2003-12-30 Brewer Science, Inc. Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US7056826B2 (en) * 2003-01-07 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming copper interconnects
CN1768306B (zh) * 2003-04-02 2011-12-14 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
US7078336B2 (en) * 2003-11-19 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
KR100712999B1 (ko) * 2006-03-29 2007-05-02 주식회사 하이닉스반도체 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
JP2010034494A (ja) * 2008-06-30 2010-02-12 Sumitomo Chemical Co Ltd 有機光電変換素子
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8986561B2 (en) * 2008-12-26 2015-03-24 Tokyo Electron Limited Substrate processing method and storage medium
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
JP6089743B2 (ja) * 2013-02-05 2017-03-08 Jsr株式会社 硬化膜形成用感放射線性樹脂組成物、硬化膜、その形成方法、半導体素子及び表示素子
US9499650B2 (en) 2013-03-19 2016-11-22 Eastman Kodak Company Thiosulfate polymers
US9772552B2 (en) 2013-03-19 2017-09-26 Eastman Kodak Company Thiosulfate polymer compositions and articles
US8916336B2 (en) 2013-03-19 2014-12-23 Eastman Kodak Company Patterning method using thiosulfate polymer and metal nanoparticles
US9005878B2 (en) 2013-03-19 2015-04-14 Eastman Kodak Company Forming patterns using thiosulfate polymer compositions
US8986924B2 (en) 2013-03-19 2015-03-24 Eastman Kodak Company Method of sequestering metals using thiosulfate polymers
KR101699382B1 (ko) * 2014-10-22 2017-01-24 유한책임회사 도요엔지니어링 가공성이 향상된 낚시릴 프레임
TWI662370B (zh) * 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物

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DE3100077A1 (de) 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4822718A (en) 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
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KR100395904B1 (ko) * 1999-04-23 2003-08-27 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100310252B1 (ko) * 1999-06-22 2001-11-14 박종섭 유기 반사방지 중합체 및 그의 제조방법

Also Published As

Publication number Publication date
FR2795411A1 (fr) 2000-12-29
JP2001049231A (ja) 2001-02-20
TW553923B (en) 2003-09-21
US20020136834A1 (en) 2002-09-26
CN1224610C (zh) 2005-10-26
JP4808597B2 (ja) 2011-11-02
JP3920537B2 (ja) 2007-05-30
GB0014257D0 (en) 2000-08-02
GB2351288B (en) 2004-02-11
GB2351288A (en) 2000-12-27
JP2007113014A (ja) 2007-05-10
KR20010003188A (ko) 2001-01-15
US6538090B2 (en) 2003-03-25
NL1015471C2 (nl) 2001-04-09
IT1320274B1 (it) 2003-11-26
NL1015471A1 (nl) 2000-12-28
KR100310252B1 (ko) 2001-11-14
US6388039B1 (en) 2002-05-14
US20020137826A1 (en) 2002-09-26
CN1278529A (zh) 2001-01-03
ITTO20000606A0 (it) 2000-06-21
US6489423B2 (en) 2002-12-03
ITTO20000606A1 (it) 2001-12-21
DE10028345A1 (de) 2001-01-25

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Year of fee payment: 16

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Effective date: 20170228