FR2791056B1 - Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant - Google Patents

Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant

Info

Publication number
FR2791056B1
FR2791056B1 FR9915748A FR9915748A FR2791056B1 FR 2791056 B1 FR2791056 B1 FR 2791056B1 FR 9915748 A FR9915748 A FR 9915748A FR 9915748 A FR9915748 A FR 9915748A FR 2791056 B1 FR2791056 B1 FR 2791056B1
Authority
FR
France
Prior art keywords
anthracenylmethyl
acrylates
meth
polymers
prepare
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9915748A
Other languages
English (en)
Other versions
FR2791056A1 (fr
Inventor
Min Ho Jung
Sung Eun Hong
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2791056A1 publication Critical patent/FR2791056A1/fr
Application granted granted Critical
Publication of FR2791056B1 publication Critical patent/FR2791056B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00Preparation of carboxylic acid esters
    • C07C67/14Preparation of carboxylic acid esters from carboxylic acid halides
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54Acrylic acid esters; Methacrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1806C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/062Copolymers with monomers not covered by C09D133/06
    • C09D133/068Copolymers with monomers not covered by C09D133/06 containing glycidyl groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/14Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/02Ortho- or ortho- and peri-condensed systems
    • C07C2603/04Ortho- or ortho- and peri-condensed systems containing three rings
    • C07C2603/22Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
    • C07C2603/24Anthracenes; Hydrogenated anthracenes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
FR9915748A 1999-03-15 1999-12-14 Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant Expired - Fee Related FR2791056B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1999-0008668A KR100465864B1 (ko) 1999-03-15 1999-03-15 유기 난반사방지 중합체 및 그의 제조방법

Publications (2)

Publication Number Publication Date
FR2791056A1 FR2791056A1 (fr) 2000-09-22
FR2791056B1 true FR2791056B1 (fr) 2004-01-02

Family

ID=36597906

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915748A Expired - Fee Related FR2791056B1 (fr) 1999-03-15 1999-12-14 Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant

Country Status (10)

Country Link
US (1) US6309790B1 (fr)
JP (2) JP4121683B2 (fr)
KR (1) KR100465864B1 (fr)
CN (1) CN1200012C (fr)
DE (1) DE19962663A1 (fr)
FR (1) FR2791056B1 (fr)
GB (1) GB2347927B (fr)
IT (1) IT1308671B1 (fr)
NL (1) NL1014639C2 (fr)
TW (1) TWI234689B (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100395904B1 (ko) * 1999-04-23 2003-08-27 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100310252B1 (ko) * 1999-06-22 2001-11-14 박종섭 유기 반사방지 중합체 및 그의 제조방법
KR100427440B1 (ko) * 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100549574B1 (ko) * 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
KR100574486B1 (ko) * 2000-06-30 2006-04-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100504436B1 (ko) * 2000-12-29 2005-07-29 주식회사 하이닉스반도체 포토 레지스트용 중합체 및 이의 제조 방법
KR20020090584A (ko) * 2001-05-28 2002-12-05 주식회사 동진쎄미켐 유기 반사 방지막용 고분자 수지, 및 이를 이용하는KrF 포토레지스트용 유기 반사 방지막 조성물
KR100351459B1 (ko) * 2001-05-30 2002-09-05 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
US6670425B2 (en) 2001-06-05 2003-12-30 Brewer Science, Inc. Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
US6893684B2 (en) * 2001-06-05 2005-05-17 Brewer Science Inc. Anti-reflective coating compositions for use with low k dielectric materials
KR20030059970A (ko) * 2002-01-04 2003-07-12 주식회사 몰커스 패턴 무너짐 현상을 극복하기 위한 유기 난반사 방지막조성물 및 이를 이용한 패턴 형성방법
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
JP2005059064A (ja) * 2003-08-13 2005-03-10 Toshiba Corp 加工方法及び半導体装置の製造方法
WO2005055248A2 (fr) * 2003-11-28 2005-06-16 Merck Patent Gmbh Ameliorations apportees a des couches semiconductrices organiques
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
WO2008080201A1 (fr) * 2007-01-05 2008-07-10 Francisco Mathieu Copolymère de méthacrylate de méthyle et de méthacrylate d'anthracényle
US7847013B2 (en) * 2007-06-19 2010-12-07 Cheil Industries Inc. Glycidyl-, OH-, COOH- and aryl-(meth)acrylate copolymer for color filter
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR100944227B1 (ko) 2007-12-17 2010-02-24 제일모직주식회사 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물
KR100952465B1 (ko) * 2007-12-18 2010-04-13 제일모직주식회사 방향족 (메타)아크릴레이트 화합물 및 감광성 고분자, 및레지스트 조성물
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
KR101259001B1 (ko) 2009-12-01 2013-04-29 영창케미칼 주식회사 유기 반사방지막 형성용 조성물 및 이를 포함하는 유기 반사방지막
TWI662370B (zh) * 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物
JP7297559B2 (ja) * 2019-06-28 2023-06-26 東京応化工業株式会社 硬化性樹脂組成物及び硬化物
CN115725216B (zh) * 2022-10-26 2023-10-24 北京科华微电子材料有限公司 一种底部抗反射涂层组合物及其用途

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413052A (en) * 1981-02-04 1983-11-01 Ciba-Geigy Corporation Photopolymerization process employing compounds containing acryloyl group and anthryl group
JPS59231531A (ja) * 1983-06-13 1984-12-26 Agency Of Ind Science & Technol 感光性高分子材料
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
JP3204465B2 (ja) * 1992-07-17 2001-09-04 東京応化工業株式会社 半導体素子製造用レジストパターン形成材料及びそれを用いたパターン形成方法
JP3268949B2 (ja) * 1993-07-20 2002-03-25 和光純薬工業株式会社 遠紫外光吸収材料及びこれを用いたパターン形成方法
US5576359A (en) * 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
JP3854367B2 (ja) * 1997-06-04 2006-12-06 Azエレクトロニックマテリアルズ株式会社 光吸収性ポリマー、光吸収膜形成性組成物及び光吸収膜とそれを用いた反射防止膜
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
TW457403B (en) * 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
JP3928278B2 (ja) * 1998-11-16 2007-06-13 Jsr株式会社 反射防止膜形成組成物
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
KR100395904B1 (ko) * 1999-04-23 2003-08-27 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법

Also Published As

Publication number Publication date
KR20000060410A (ko) 2000-10-16
JP4121683B2 (ja) 2008-07-23
KR100465864B1 (ko) 2005-01-24
GB2347927B (en) 2004-03-24
FR2791056A1 (fr) 2000-09-22
ITTO991092A1 (it) 2001-06-14
DE19962663A1 (de) 2000-09-21
JP2000264921A (ja) 2000-09-26
CN1200012C (zh) 2005-05-04
JP4791433B2 (ja) 2011-10-12
GB9927834D0 (en) 2000-01-26
NL1014639A1 (nl) 2000-09-18
CN1266843A (zh) 2000-09-20
US6309790B1 (en) 2001-10-30
JP2008197624A (ja) 2008-08-28
ITTO991092A0 (it) 1999-12-14
GB2347927A (en) 2000-09-20
TWI234689B (en) 2005-06-21
NL1014639C2 (nl) 2001-12-28
IT1308671B1 (it) 2002-01-09

Similar Documents

Publication Publication Date Title
FR2791056B1 (fr) Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant
FR2795411B1 (fr) 9-anthraldehydeoxim(meth)acrylates, procede de preparation et polymeres qu'ils permettent de preparer
FR2710646B1 (fr) Microdispersions stables et microgels à base de polymères acryliques, leur procédé d'obtention et compositions, notamment cosmétiques, les contenant.
CA2287375A1 (fr) Polymeres amphoteres pour produits d'hygiene corporelle
IL137074A0 (en) Low molecular weight (meth) acrylate copolymer emulsions
EP0979834A3 (fr) Copolymères de (méth)acrylates ayant des propriétés excellentes à basses températures
HUP0003921A3 (en) Sulfonylated dipeptide compounds which inhibit leukocyte adhesion mediated by vla-4, pharmaceutical compositions comprising thereof and their use
DZ3191A1 (fr) Composés d'indazole et compositions pharmaceutiques inhibant les protéines kinases, et procédés d'utilisation de ceux-ci.
GB0019157D0 (en) Novel photoresist monomers having stability to post exposure delay polymers thereof and photoresist compositions containing the same
DE60010761D1 (de) Initiator/amidine komplexe, solche komplexe enthaltende systeme, und damit hergestellte polymerisierte zusammensetzungen
NO996489L (no) Silyl(met)akrylat-kopolymerer, samt anvendelse derav
HUP0302337A3 (en) Pyrimidine-2,4,6-trione metalloproteinase inhibitors, pharmaceutical compositions containing them and their use
HUP0202501A3 (en) Pyrimidine-2,4,6-trione metalloproteinase inhibitors, pharmaceutical compositions containing them and their use
FR2824832B1 (fr) Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique
IT1302900B1 (it) Catetere amagnetico per la registrazione monocatetere di potenzialid'azione monofasici multipli, localizzabile tridimensionalmente e
MY125792A (en) Personal cleanser comprising a phase stable mixture of polymers
FR2829387B1 (fr) Compositions cosmetiques contenant un copolymere d'acide methacrylique, une dimethicone et un polymere cationique et leurs utilisations
ES2115417T3 (es) Composicion cosmetica de poder fijante y/o acondicionador que contiene un copolimero acrilico particular.
DE69617983D1 (de) Acrylfluorkohlenstoffpolymer enthaltende beschichtungen
ID24632A (id) Komposisi penyalutan sangat padat
CA2190396A1 (fr) Compositions cosmetiques autobronzantes
AU9691798A (en) Film-forming compositions containing alkoxysilane functional acrylic polymers
FR2732706B1 (fr) Garde-corps d'echafaudage
EP0690080A3 (fr) (Meth)acrylates monomères à groupes hydroxyles encombrés contenants di(meth)acrylates et compositions les contenant
ATE394093T1 (de) Kosmetische lichtschutzzubereitungen enthaltend ein amphiphiles copolymer aus 2-acrylamido-2- methylpropanesulfonsäure und (meth)acrylat

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100831