FR2791056B1 - Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant - Google Patents
Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenantInfo
- Publication number
- FR2791056B1 FR2791056B1 FR9915748A FR9915748A FR2791056B1 FR 2791056 B1 FR2791056 B1 FR 2791056B1 FR 9915748 A FR9915748 A FR 9915748A FR 9915748 A FR9915748 A FR 9915748A FR 2791056 B1 FR2791056 B1 FR 2791056B1
- Authority
- FR
- France
- Prior art keywords
- anthracenylmethyl
- acrylates
- meth
- polymers
- prepare
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- -1 ANTHRACENYLMETHYL Chemical class 0.000 title 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 title 1
- 239000006117 anti-reflective coating Substances 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/14—Preparation of carboxylic acid esters from carboxylic acid halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/062—Copolymers with monomers not covered by C09D133/06
- C09D133/068—Copolymers with monomers not covered by C09D133/06 containing glycidyl groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
- C07C2603/24—Anthracenes; Hydrogenated anthracenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0008668A KR100465864B1 (ko) | 1999-03-15 | 1999-03-15 | 유기 난반사방지 중합체 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2791056A1 FR2791056A1 (fr) | 2000-09-22 |
FR2791056B1 true FR2791056B1 (fr) | 2004-01-02 |
Family
ID=36597906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9915748A Expired - Fee Related FR2791056B1 (fr) | 1999-03-15 | 1999-12-14 | Anthracenylmethyl(meth)acrylates, polymeres qu'ils permettent de preparer et revetements anti-reflechissants les contenant |
Country Status (10)
Country | Link |
---|---|
US (1) | US6309790B1 (fr) |
JP (2) | JP4121683B2 (fr) |
KR (1) | KR100465864B1 (fr) |
CN (1) | CN1200012C (fr) |
DE (1) | DE19962663A1 (fr) |
FR (1) | FR2791056B1 (fr) |
GB (1) | GB2347927B (fr) |
IT (1) | IT1308671B1 (fr) |
NL (1) | NL1014639C2 (fr) |
TW (1) | TWI234689B (fr) |
Families Citing this family (34)
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KR100395904B1 (ko) * | 1999-04-23 | 2003-08-27 | 주식회사 하이닉스반도체 | 유기 반사방지 중합체 및 그의 제조방법 |
KR100310252B1 (ko) * | 1999-06-22 | 2001-11-14 | 박종섭 | 유기 반사방지 중합체 및 그의 제조방법 |
KR100355604B1 (ko) * | 1999-12-23 | 2002-10-12 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
KR100427440B1 (ko) * | 1999-12-23 | 2004-04-17 | 주식회사 하이닉스반도체 | 유기 반사방지 화합물 및 그의 제조방법 |
KR100549574B1 (ko) * | 1999-12-30 | 2006-02-08 | 주식회사 하이닉스반도체 | 유기 반사 방지막용 중합체 및 그의 제조방법 |
US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
KR100574486B1 (ko) * | 2000-06-30 | 2006-04-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
KR100721181B1 (ko) * | 2000-06-30 | 2007-05-23 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
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KR100721182B1 (ko) * | 2000-06-30 | 2007-05-23 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
KR100504436B1 (ko) * | 2000-12-29 | 2005-07-29 | 주식회사 하이닉스반도체 | 포토 레지스트용 중합체 및 이의 제조 방법 |
KR20020090584A (ko) * | 2001-05-28 | 2002-12-05 | 주식회사 동진쎄미켐 | 유기 반사 방지막용 고분자 수지, 및 이를 이용하는KrF 포토레지스트용 유기 반사 방지막 조성물 |
KR100351459B1 (ko) * | 2001-05-30 | 2002-09-05 | 주식회사 하이닉스반도체 | 유기 반사방지 중합체 및 그의 제조방법 |
US6893684B2 (en) * | 2001-06-05 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coating compositions for use with low k dielectric materials |
US6670425B2 (en) | 2001-06-05 | 2003-12-30 | Brewer Science, Inc. | Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings |
KR20030059970A (ko) * | 2002-01-04 | 2003-07-12 | 주식회사 몰커스 | 패턴 무너짐 현상을 극복하기 위한 유기 난반사 방지막조성물 및 이를 이용한 패턴 형성방법 |
KR100480235B1 (ko) * | 2002-07-18 | 2005-04-06 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
TWI363251B (en) | 2003-07-30 | 2012-05-01 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition for lithography containing compound having protected carboxy group |
US7361447B2 (en) * | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
JP2005059064A (ja) * | 2003-08-13 | 2005-03-10 | Toshiba Corp | 加工方法及び半導体装置の製造方法 |
EP1783781A3 (fr) * | 2003-11-28 | 2007-10-03 | Merck Patent GmbH | Améliorations de et associées aux couches de semi-conducteur organique |
KR101156973B1 (ko) * | 2005-03-02 | 2012-06-20 | 주식회사 동진쎄미켐 | 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물 |
WO2008080201A1 (fr) * | 2007-01-05 | 2008-07-10 | Francisco Mathieu | Copolymère de méthacrylate de méthyle et de méthacrylate d'anthracényle |
US7847013B2 (en) * | 2007-06-19 | 2010-12-07 | Cheil Industries Inc. | Glycidyl-, OH-, COOH- and aryl-(meth)acrylate copolymer for color filter |
US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
KR100944227B1 (ko) | 2007-12-17 | 2010-02-24 | 제일모직주식회사 | 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물 |
KR100952465B1 (ko) * | 2007-12-18 | 2010-04-13 | 제일모직주식회사 | 방향족 (메타)아크릴레이트 화합물 및 감광성 고분자, 및레지스트 조성물 |
US20100015550A1 (en) * | 2008-07-17 | 2010-01-21 | Weihong Liu | Dual damascene via filling composition |
KR101259001B1 (ko) | 2009-12-01 | 2013-04-29 | 영창케미칼 주식회사 | 유기 반사방지막 형성용 조성물 및 이를 포함하는 유기 반사방지막 |
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JP3928278B2 (ja) * | 1998-11-16 | 2007-06-13 | Jsr株式会社 | 反射防止膜形成組成物 |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
KR100395904B1 (ko) * | 1999-04-23 | 2003-08-27 | 주식회사 하이닉스반도체 | 유기 반사방지 중합체 및 그의 제조방법 |
-
1999
- 1999-03-15 KR KR10-1999-0008668A patent/KR100465864B1/ko not_active IP Right Cessation
- 1999-11-17 TW TW088120016A patent/TWI234689B/zh not_active IP Right Cessation
- 1999-11-26 GB GB9927834A patent/GB2347927B/en not_active Expired - Fee Related
- 1999-12-14 FR FR9915748A patent/FR2791056B1/fr not_active Expired - Fee Related
- 1999-12-14 JP JP35449299A patent/JP4121683B2/ja not_active Expired - Fee Related
- 1999-12-14 IT IT1999TO001092A patent/IT1308671B1/it active
- 1999-12-15 CN CNB991263804A patent/CN1200012C/zh not_active Expired - Fee Related
- 1999-12-23 DE DE19962663A patent/DE19962663A1/de not_active Ceased
-
2000
- 2000-02-07 US US09/499,873 patent/US6309790B1/en not_active Expired - Fee Related
- 2000-03-14 NL NL1014639A patent/NL1014639C2/nl not_active IP Right Cessation
-
2007
- 2007-11-14 JP JP2007295799A patent/JP4791433B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008197624A (ja) | 2008-08-28 |
TWI234689B (en) | 2005-06-21 |
KR20000060410A (ko) | 2000-10-16 |
NL1014639C2 (nl) | 2001-12-28 |
CN1266843A (zh) | 2000-09-20 |
DE19962663A1 (de) | 2000-09-21 |
KR100465864B1 (ko) | 2005-01-24 |
JP2000264921A (ja) | 2000-09-26 |
IT1308671B1 (it) | 2002-01-09 |
NL1014639A1 (nl) | 2000-09-18 |
GB2347927B (en) | 2004-03-24 |
FR2791056A1 (fr) | 2000-09-22 |
JP4121683B2 (ja) | 2008-07-23 |
CN1200012C (zh) | 2005-05-04 |
GB9927834D0 (en) | 2000-01-26 |
GB2347927A (en) | 2000-09-20 |
ITTO991092A0 (it) | 1999-12-14 |
US6309790B1 (en) | 2001-10-30 |
ITTO991092A1 (it) | 2001-06-14 |
JP4791433B2 (ja) | 2011-10-12 |
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