FR2779886B1 - Amplificateur-separateur utilisant un transistor mos a tension de seuil dynamique - Google Patents

Amplificateur-separateur utilisant un transistor mos a tension de seuil dynamique

Info

Publication number
FR2779886B1
FR2779886B1 FR9814715A FR9814715A FR2779886B1 FR 2779886 B1 FR2779886 B1 FR 2779886B1 FR 9814715 A FR9814715 A FR 9814715A FR 9814715 A FR9814715 A FR 9814715A FR 2779886 B1 FR2779886 B1 FR 2779886B1
Authority
FR
France
Prior art keywords
separator
amplifier
threshold voltage
mos transistor
dynamic threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9814715A
Other languages
English (en)
French (fr)
Other versions
FR2779886A1 (fr
Inventor
Yuuichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2779886A1 publication Critical patent/FR2779886A1/fr
Application granted granted Critical
Publication of FR2779886B1 publication Critical patent/FR2779886B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
FR9814715A 1998-06-11 1998-11-23 Amplificateur-separateur utilisant un transistor mos a tension de seuil dynamique Expired - Fee Related FR2779886B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10163440A JPH11355123A (ja) 1998-06-11 1998-06-11 動的しきい値ｍｏｓトランジスタを用いたバッファ

Publications (2)

Publication Number Publication Date
FR2779886A1 FR2779886A1 (fr) 1999-12-17
FR2779886B1 true FR2779886B1 (fr) 2001-05-04

Family

ID=15773943

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9814715A Expired - Fee Related FR2779886B1 (fr) 1998-06-11 1998-11-23 Amplificateur-separateur utilisant un transistor mos a tension de seuil dynamique

Country Status (6)

Country Link
US (1) US6304110B1 (enExample)
JP (1) JPH11355123A (enExample)
KR (1) KR100302251B1 (enExample)
DE (1) DE19855602C2 (enExample)
FR (1) FR2779886B1 (enExample)
TW (1) TW430977B (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000035831A (ja) * 1998-07-21 2000-02-02 Nec Corp 可変閾値電圧トランジスタを用いた低スキュークロックツリー回路
KR100421610B1 (ko) * 2000-03-10 2004-03-10 주식회사 하이닉스반도체 저전압 동적로직의 전력소모 억제회로
JP3696501B2 (ja) 2000-12-08 2005-09-21 シャープ株式会社 半導体集積回路
US6404243B1 (en) * 2001-01-12 2002-06-11 Hewlett-Packard Company System and method for controlling delay times in floating-body CMOSFET inverters
US6483375B1 (en) 2001-06-28 2002-11-19 Intel Corporation Low power operation mechanism and method
US6518817B2 (en) * 2001-06-28 2003-02-11 Intel Corporation Voltage buffer
US6518826B2 (en) 2001-06-28 2003-02-11 Intel Corporation Method and apparatus for dynamic leakage control
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
KR100434176B1 (ko) * 2001-11-30 2004-06-04 주식회사 하이닉스반도체 전원전압 레벨 검출기
US6677803B1 (en) * 2002-08-21 2004-01-13 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit device
US6833749B2 (en) * 2002-12-09 2004-12-21 Honeywell International Inc. System and method for obtaining hysteresis through body substrate control
KR100728950B1 (ko) * 2004-03-11 2007-06-15 주식회사 하이닉스반도체 내부전압 발생장치
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
EP1792397A2 (en) * 2004-09-08 2007-06-06 Koninklijke Philips Electronics N.V. Fast switching circuit with input hysteresis
US7205823B2 (en) * 2005-02-23 2007-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Oscillating buffer with single gate oxide devices
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
KR100691108B1 (ko) * 2005-12-28 2007-03-12 동부일렉트로닉스 주식회사 입출력 시차가 감소한 지연 회로
JP2009049859A (ja) * 2007-08-22 2009-03-05 Seiko Epson Corp 電気回路、電気回路の駆動方法、表示装置および電子機器。
JP2009171552A (ja) * 2007-12-21 2009-07-30 Nec Electronics Corp 半導体出力回路
US8207784B2 (en) * 2008-02-12 2012-06-26 Semi Solutions, Llc Method and apparatus for MOSFET drain-source leakage reduction
EP2760136B1 (en) 2008-02-28 2018-05-09 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US7924087B2 (en) * 2008-05-20 2011-04-12 Mediatek Inc. Reference buffer circuit
JP5181893B2 (ja) * 2008-07-17 2013-04-10 株式会社リコー インバータ回路
US20100102872A1 (en) * 2008-10-29 2010-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dynamic Substrate Bias for PMOS Transistors to Alleviate NBTI Degradation
KR101140347B1 (ko) * 2008-11-19 2012-05-03 한국전자통신연구원 동적 문턱 전압 소자를 이용한 스위칭 회로 및 이를 포함하는 휴대기기용 ｄｃ-ｄｃ 변환기
JP5338387B2 (ja) * 2009-03-05 2013-11-13 ミツミ電機株式会社 電源切換え装置
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
US20100321094A1 (en) * 2010-08-29 2010-12-23 Hao Luo Method and circuit implementation for reducing the parameter fluctuations in integrated circuits
US8547166B2 (en) * 2011-07-29 2013-10-01 Macronix International Co., Ltd. Temperature compensation circuit and temperature compensated metal oxide semiconductor transistor using the same
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
WO2014141800A1 (ja) * 2013-03-12 2014-09-18 シャープ株式会社 シフトレジスタ回路、駆動回路、及び表示装置
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US8803591B1 (en) 2013-11-06 2014-08-12 Freescale Semiconductor, Inc. MOS transistor with forward bulk-biasing circuit
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9264045B2 (en) 2014-04-01 2016-02-16 Stmicroelectronics International N.V. Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940006998B1 (ko) * 1991-05-28 1994-08-03 삼성전자 주식회사 높은 출력 이득을 얻는 데이타 출력 드라이버
US5422591A (en) 1994-01-03 1995-06-06 Sgs-Thomson Microelectronics, Inc. Output driver circuit with body bias control for multiple power supply operation
JPH07212210A (ja) 1994-01-11 1995-08-11 Kanebo Ltd 半導体集積回路
US5537067A (en) * 1994-03-11 1996-07-16 Texas Instruments Incorporated Signal driver circuit operable to control signal rise and fall times
JP3205185B2 (ja) 1994-08-16 2001-09-04 株式会社 沖マイクロデザイン レベル変換回路
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
JP3085130B2 (ja) * 1995-03-22 2000-09-04 日本電気株式会社 ドライバ回路
US5821769A (en) * 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
JP3602216B2 (ja) 1995-09-19 2004-12-15 富士通株式会社 半導体装置
US5644266A (en) 1995-11-13 1997-07-01 Chen; Ming-Jer Dynamic threshold voltage scheme for low voltage CMOS inverter
KR970072681A (ko) * 1996-04-03 1997-11-07 김광호 기판 바이어스가 분리된 회로에서의 정전기 보호회로

Also Published As

Publication number Publication date
KR20000004876A (ko) 2000-01-25
KR100302251B1 (ko) 2001-11-02
DE19855602A1 (de) 1999-12-16
JPH11355123A (ja) 1999-12-24
FR2779886A1 (fr) 1999-12-17
TW430977B (en) 2001-04-21
US6304110B1 (en) 2001-10-16
DE19855602C2 (de) 2003-01-09

Similar Documents

Publication Publication Date Title
FR2779886B1 (fr) Amplificateur-separateur utilisant un transistor mos a tension de seuil dynamique
DE50015742D1 (de) Trench-mos-transistor
FR2743662B1 (fr) Perfectionnement aux registres a decalage utilisant des transistors mis de meme polarite
EP0898808A4 (en) Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
DE59702679D1 (de) Verstärker mit Neuron-MOS Transistoren
CU23066A3 (es) Sensor de tension de cinteria gruesa.
EP0726603A3 (en) Trench field effect transistor with junction barrier
DE19983773T1 (de) Transistor mit eingekerbtem Gate
DE69418365D1 (de) Hochspannung-MIS-Feldeffekttransistor
FR2798480B1 (fr) Regulateur de tension
NL1013625A1 (nl) Laterale hoogspanning halfgeleiderinrichting.
AU2001271188A1 (en) A power mos transistor comprising a plurality of transistor segments with different threshold voltages
DE60019901D1 (de) Rillenwalzvorrichtung
FR2789519B1 (fr) Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
FR2783942B1 (fr) Dispositif de regulation de tension
IT1316002B1 (it) Regolatore di tensione per circuiti a basso consumo.
FR2767967B1 (fr) Composant transistor
DE60124048D1 (de) Feld-effekt-transistor
FR2802339B1 (fr) Transistor mos durcis
FR2792459B1 (fr) Dispositif a semiconducteur ayant un transistor mis
IT1319852B1 (it) Dispositivo di tenuta per un cuscinetto a rotolamento.
EP0643419A3 (en) Integrated circuit transistor with offset drain.
ATE419651T1 (de) Mos-feldeffekttransistor mit hilfselektrode
SE9703506L (sv) Diodanordning
DE50108778D1 (de) Dialkinverbindungen

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090731