FR2767967B1 - Composant transistor - Google Patents

Composant transistor

Info

Publication number
FR2767967B1
FR2767967B1 FR9807428A FR9807428A FR2767967B1 FR 2767967 B1 FR2767967 B1 FR 2767967B1 FR 9807428 A FR9807428 A FR 9807428A FR 9807428 A FR9807428 A FR 9807428A FR 2767967 B1 FR2767967 B1 FR 2767967B1
Authority
FR
France
Prior art keywords
transistor component
transistor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9807428A
Other languages
English (en)
Other versions
FR2767967A1 (fr
Inventor
Wolfgang Feiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2767967A1 publication Critical patent/FR2767967A1/fr
Application granted granted Critical
Publication of FR2767967B1 publication Critical patent/FR2767967B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR9807428A 1997-06-13 1998-06-12 Composant transistor Expired - Fee Related FR2767967B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19725091A DE19725091B4 (de) 1997-06-13 1997-06-13 Laterales Transistorbauelement und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2767967A1 FR2767967A1 (fr) 1999-03-05
FR2767967B1 true FR2767967B1 (fr) 2003-10-17

Family

ID=7832433

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9807428A Expired - Fee Related FR2767967B1 (fr) 1997-06-13 1998-06-12 Composant transistor

Country Status (5)

Country Link
US (1) US6236068B1 (fr)
JP (1) JPH1168106A (fr)
DE (1) DE19725091B4 (fr)
FR (1) FR2767967B1 (fr)
IT (1) IT1301704B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
DE19828494B4 (de) 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors
EP1127379B1 (fr) * 1999-08-19 2010-06-02 Infineon Technologies AG Composant a semi-conducteur de puissance a structure verticale
JP3602751B2 (ja) * 1999-09-28 2004-12-15 株式会社東芝 高耐圧半導体装置
JP2001102569A (ja) * 1999-09-28 2001-04-13 Fuji Electric Co Ltd 半導体デバイス
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
JP2002353444A (ja) * 2001-05-28 2002-12-06 Fuji Electric Co Ltd 半導体装置
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
JP4761691B2 (ja) * 2002-06-24 2011-08-31 富士電機株式会社 半導体装置
KR100471173B1 (ko) * 2003-05-15 2005-03-10 삼성전자주식회사 다층채널을 갖는 트랜지스터 및 그 제조방법
DE102004036387B4 (de) * 2004-07-27 2018-05-03 Robert Bosch Gmbh Hochvolt-MOS-Transistor und entsprechendes Herstellungsverfahren
JP5191132B2 (ja) 2007-01-29 2013-04-24 三菱電機株式会社 半導体装置
JP5167323B2 (ja) * 2010-09-30 2013-03-21 トヨタ自動車株式会社 半導体装置
CN105448998B (zh) * 2010-10-12 2019-09-03 高通股份有限公司 集成电路芯片和垂直功率器件
JP5896554B2 (ja) * 2012-02-17 2016-03-30 ローム株式会社 半導体装置
CN105633148B (zh) * 2014-10-29 2019-05-17 比亚迪股份有限公司 Mos型功率器件及其形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
JP2585331B2 (ja) * 1986-12-26 1997-02-26 株式会社東芝 高耐圧プレーナ素子
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JPH0529615A (ja) * 1991-03-11 1993-02-05 Fuji Electric Co Ltd 伝導度変調型ｍｉｓｆｅｔを有する半導体装置
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
JPH053295A (ja) * 1991-06-21 1993-01-08 Nec Ic Microcomput Syst Ltd 半導体集積回路
JP3278496B2 (ja) * 1993-06-14 2002-04-30 株式会社東芝 半導体装置およびその駆動方法
JP3277701B2 (ja) * 1994-07-12 2002-04-22 富士電機株式会社 横型絶縁ゲートバイポーラトランジスタ
JP3522983B2 (ja) * 1995-08-24 2004-04-26 株式会社東芝 横型ｉｇｂｔ
US5731603A (en) * 1995-08-24 1998-03-24 Kabushiki Kaisha Toshiba Lateral IGBT

Also Published As

Publication number Publication date
IT1301704B1 (it) 2000-07-07
DE19725091A1 (de) 1998-12-17
DE19725091B4 (de) 2004-09-02
ITMI981350A1 (it) 1999-12-12
FR2767967A1 (fr) 1999-03-05
JPH1168106A (ja) 1999-03-09
US6236068B1 (en) 2001-05-22

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150227