FR2752335B1 - Circuit integre incorporant un circuit pour piloter des transistors de puissance montes selon une configuration en demi-pont permettant une oscillation negative excessive du noeud de sortie - Google Patents
Circuit integre incorporant un circuit pour piloter des transistors de puissance montes selon une configuration en demi-pont permettant une oscillation negative excessive du noeud de sortieInfo
- Publication number
- FR2752335B1 FR2752335B1 FR9712964A FR9712964A FR2752335B1 FR 2752335 B1 FR2752335 B1 FR 2752335B1 FR 9712964 A FR9712964 A FR 9712964A FR 9712964 A FR9712964 A FR 9712964A FR 2752335 B1 FR2752335 B1 FR 2752335B1
- Authority
- FR
- France
- Prior art keywords
- output node
- power transistors
- mounted power
- bridge configuration
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000010355 oscillation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43479195A | 1995-05-04 | 1995-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2752335A1 FR2752335A1 (fr) | 1998-02-13 |
FR2752335B1 true FR2752335B1 (fr) | 2003-08-01 |
Family
ID=23725718
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9605548A Expired - Fee Related FR2733861B1 (fr) | 1995-05-04 | 1996-05-03 | Procede et circuit pour piloter des transistors de puissance montes selon une configuration en demi-pont permettant une oscillation negative excessive du noeud de sortie et circuit integre incorporant ce circuit |
FR9712964A Expired - Fee Related FR2752335B1 (fr) | 1995-05-04 | 1997-10-16 | Circuit integre incorporant un circuit pour piloter des transistors de puissance montes selon une configuration en demi-pont permettant une oscillation negative excessive du noeud de sortie |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9605548A Expired - Fee Related FR2733861B1 (fr) | 1995-05-04 | 1996-05-03 | Procede et circuit pour piloter des transistors de puissance montes selon une configuration en demi-pont permettant une oscillation negative excessive du noeud de sortie et circuit integre incorporant ce circuit |
Country Status (8)
Country | Link |
---|---|
US (1) | US6211706B1 (fr) |
JP (1) | JP2896342B2 (fr) |
KR (1) | KR100250245B1 (fr) |
DE (1) | DE19617832A1 (fr) |
FR (2) | FR2733861B1 (fr) |
GB (1) | GB2300532B (fr) |
IT (1) | IT1282405B1 (fr) |
SG (1) | SG48434A1 (fr) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0977264B1 (fr) * | 1998-07-31 | 2006-04-26 | Freescale Semiconductor, Inc. | Structure semiconductrice pour circuit d'attaque avec décalage de niveau |
FI110898B (fi) * | 1998-10-26 | 2003-04-15 | Abb Industry Oy | Vaihtosuuntaaja |
JP2001128464A (ja) * | 1999-10-26 | 2001-05-11 | Fuji Electric Co Ltd | 電力変換装置 |
DE10056833C2 (de) * | 1999-11-24 | 2003-03-20 | Int Rectifier Corp | Integrierte Treiberschaltung für Halbbrückenschaltung mit zwei Leistungstransistoren |
US6353345B1 (en) * | 2000-04-04 | 2002-03-05 | Philips Electronics North America Corporation | Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS |
JP4710112B2 (ja) * | 2000-08-10 | 2011-06-29 | 富士電機システムズ株式会社 | 半導体装置 |
US6388468B1 (en) * | 2000-08-30 | 2002-05-14 | Yazaki North America | Circuit and method for operating a MOSFET control circuit with a system operating voltage greater than a maximum supply voltage limit |
US6657399B2 (en) * | 2001-01-26 | 2003-12-02 | International Rectifier Corporation | Self-oscillating circuit for driving high-side and low-side switching devices with variable width pulses |
JP3848922B2 (ja) * | 2001-02-06 | 2006-11-22 | ハーマン インターナショナル インダストリーズ インコーポレイテッド | 半ブリッジゲートドライバ回路 |
US7012452B2 (en) * | 2003-08-19 | 2006-03-14 | International Rectifier Corporation | High voltage high speed amplifier using floating high side structure |
JP4400336B2 (ja) * | 2003-08-27 | 2010-01-20 | 株式会社デンソー | 電子制御装置 |
US7330017B2 (en) * | 2004-01-29 | 2008-02-12 | Enpirion, Inc. | Driver for a power converter and a method of driving a switch thereof |
US7190195B2 (en) * | 2004-03-29 | 2007-03-13 | Rohm Co., Ltd. | Input circuit and output circuit |
CN100530927C (zh) * | 2005-01-14 | 2009-08-19 | 三菱电机株式会社 | 逆变器装置 |
JP2009512994A (ja) * | 2005-06-24 | 2009-03-26 | インターナショナル レクティファイアー コーポレイション | 低インダクタンスの半導体ハーフブリッジモジュール |
JP2007209054A (ja) * | 2006-01-31 | 2007-08-16 | Sharp Corp | スイッチングレギュレータ及びその制御回路 |
JP4857814B2 (ja) * | 2006-02-28 | 2012-01-18 | 株式会社日立製作所 | モータ駆動装置 |
US7521907B2 (en) | 2006-03-06 | 2009-04-21 | Enpirion, Inc. | Controller for a power converter and method of operating the same |
KR20070107963A (ko) * | 2006-05-04 | 2007-11-08 | 페어차일드코리아반도체 주식회사 | 고전압 게이트 드라이버용 로직회로 |
US7893676B2 (en) * | 2006-07-20 | 2011-02-22 | Enpirion, Inc. | Driver for switch and a method of driving the same |
US7948280B2 (en) * | 2006-10-20 | 2011-05-24 | Enpirion, Inc. | Controller including a sawtooth generator and method of operating the same |
US8063613B2 (en) * | 2006-12-11 | 2011-11-22 | International Rectifier Corporation | Power converter driver with split power supply |
JP4531075B2 (ja) * | 2007-05-16 | 2010-08-25 | 株式会社日立製作所 | 半導体回路 |
US7876080B2 (en) * | 2007-12-27 | 2011-01-25 | Enpirion, Inc. | Power converter with monotonic turn-on for pre-charged output capacitor |
US7679342B2 (en) * | 2008-04-16 | 2010-03-16 | Enpirion, Inc. | Power converter with power switch operable in controlled current mode |
US8410769B2 (en) * | 2008-04-16 | 2013-04-02 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8692532B2 (en) * | 2008-04-16 | 2014-04-08 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8541991B2 (en) * | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US9246390B2 (en) | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8686698B2 (en) | 2008-04-16 | 2014-04-01 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8698463B2 (en) * | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
US9548714B2 (en) * | 2008-12-29 | 2017-01-17 | Altera Corporation | Power converter with a dynamically configurable controller and output filter |
US8867295B2 (en) | 2010-12-17 | 2014-10-21 | Enpirion, Inc. | Power converter for a memory module |
CN102437842B (zh) * | 2011-10-19 | 2013-11-06 | 南京航空航天大学 | 一种基于集成驱动芯片的开关管驱动电路 |
JP5236822B1 (ja) * | 2012-01-30 | 2013-07-17 | シャープ株式会社 | ドライバ回路 |
JP6304966B2 (ja) * | 2013-08-05 | 2018-04-04 | 三菱電機株式会社 | 半導体駆動装置及び半導体装置 |
JP5987991B2 (ja) | 2013-09-02 | 2016-09-07 | 富士電機株式会社 | 半導体装置 |
CN103746685A (zh) * | 2013-12-11 | 2014-04-23 | 中国电子科技集团公司第五十五研究所 | 高效率微波功率放大器脉冲调制器 |
EP3100269B1 (fr) * | 2014-01-28 | 2020-10-07 | Schneider Electric IT Corporation | Circuit d'attaque de grille bipolaire |
FR3023412B1 (fr) * | 2014-07-04 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Amplificateur haute tension |
US9537338B2 (en) | 2014-09-16 | 2017-01-03 | Navitas Semiconductor Inc. | Level shift and inverter circuits for GaN devices |
US9571093B2 (en) | 2014-09-16 | 2017-02-14 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
US10084448B2 (en) * | 2016-06-08 | 2018-09-25 | Eridan Communications, Inc. | Driver interface methods and apparatus for switch-mode power converters, switch-mode power amplifiers, and other switch-based circuits |
US9712058B1 (en) | 2016-08-29 | 2017-07-18 | Silanna Asia Pte Ltd | High speed tri-level input power converter gate driver |
CN109194100B (zh) * | 2018-10-24 | 2019-12-20 | 华大半导体有限公司 | 一种栅极驱动电路 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4066918A (en) * | 1976-09-30 | 1978-01-03 | Rca Corporation | Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits |
US4933573A (en) * | 1987-09-18 | 1990-06-12 | Fuji Electric Co., Ltd. | Semiconductor integrated circuit |
FR2630276B1 (fr) * | 1988-04-14 | 1992-07-03 | Bendix Electronics Sa | Circuit de commande d'une charge inductive |
JPH0220056A (ja) * | 1988-07-07 | 1990-01-23 | Toshiba Corp | 半導体装置 |
US5156989A (en) * | 1988-11-08 | 1992-10-20 | Siliconix, Incorporated | Complementary, isolated DMOS IC technology |
IT1228900B (it) * | 1989-02-27 | 1991-07-09 | Sgs Thomson Microelectronics | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
DE58906591D1 (de) * | 1989-06-08 | 1994-02-10 | Siemens Ag | Schaltungsanordnung zum Schutz elektronischer Schaltungen vor Überspannung. |
US4994955A (en) * | 1989-12-29 | 1991-02-19 | North American Philips Corporation | Half-bridge driver which is insensitive to common mode currents |
US5105099A (en) * | 1991-03-01 | 1992-04-14 | Harris Corporation | Level shift circuit with common mode rejection |
US5202590A (en) * | 1991-11-06 | 1993-04-13 | Intel Corporation | Subthreshold sense circuit for clamping an injected current |
JP2771729B2 (ja) * | 1992-04-16 | 1998-07-02 | 三菱電機株式会社 | チャージポンプ回路 |
US5408150A (en) * | 1992-06-04 | 1995-04-18 | Linear Technology Corporation | Circuit for driving two power mosfets in a half-bridge configuration |
US5373435A (en) * | 1993-05-07 | 1994-12-13 | Philips Electronics North America Corporation | High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator |
US5467050A (en) * | 1994-01-04 | 1995-11-14 | Texas Instruments Incorporated | Dynamic biasing circuit for semiconductor device |
US5502412A (en) * | 1995-05-04 | 1996-03-26 | International Rectifier Corporation | Method and circuit for driving power transistors in a half bridge configuration from control signals referenced to any potential between the line voltage and the line voltage return and integrated circuit incorporating the circuit |
-
1996
- 1996-05-02 JP JP8111475A patent/JP2896342B2/ja not_active Expired - Lifetime
- 1996-05-03 FR FR9605548A patent/FR2733861B1/fr not_active Expired - Fee Related
- 1996-05-03 DE DE19617832A patent/DE19617832A1/de not_active Ceased
- 1996-05-03 SG SG1996009693A patent/SG48434A1/en unknown
- 1996-05-03 KR KR1019960014450A patent/KR100250245B1/ko not_active IP Right Cessation
- 1996-05-03 IT IT96MI000870A patent/IT1282405B1/it active IP Right Grant
- 1996-05-07 GB GB9609472A patent/GB2300532B/en not_active Expired - Lifetime
-
1997
- 1997-06-10 US US08/872,450 patent/US6211706B1/en not_active Expired - Lifetime
- 1997-10-16 FR FR9712964A patent/FR2752335B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR960043268A (ko) | 1996-12-23 |
FR2733861B1 (fr) | 1998-03-27 |
JP2896342B2 (ja) | 1999-05-31 |
DE19617832A1 (de) | 1996-11-07 |
IT1282405B1 (it) | 1998-03-20 |
JPH099608A (ja) | 1997-01-10 |
SG48434A1 (en) | 1998-04-17 |
US6211706B1 (en) | 2001-04-03 |
GB2300532A (en) | 1996-11-06 |
ITMI960870A1 (it) | 1997-11-03 |
ITMI960870A0 (fr) | 1996-05-03 |
KR100250245B1 (ko) | 2000-04-01 |
GB2300532B (en) | 1999-09-22 |
FR2752335A1 (fr) | 1998-02-13 |
FR2733861A1 (fr) | 1996-11-08 |
GB9609472D0 (en) | 1996-07-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110131 |