FR2713828B1 - Laser à semiconducteurs. - Google Patents
Laser à semiconducteurs.Info
- Publication number
- FR2713828B1 FR2713828B1 FR9414983A FR9414983A FR2713828B1 FR 2713828 B1 FR2713828 B1 FR 2713828B1 FR 9414983 A FR9414983 A FR 9414983A FR 9414983 A FR9414983 A FR 9414983A FR 2713828 B1 FR2713828 B1 FR 2713828B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Optical Head (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5312360A JPH07170019A (ja) | 1993-12-14 | 1993-12-14 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2713828A1 FR2713828A1 (fr) | 1995-06-16 |
FR2713828B1 true FR2713828B1 (fr) | 1996-02-02 |
Family
ID=18028317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9414983A Expired - Fee Related FR2713828B1 (fr) | 1993-12-14 | 1994-12-13 | Laser à semiconducteurs. |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH07170019A (fr) |
DE (1) | DE4444618A1 (fr) |
FR (1) | FR2713828B1 (fr) |
GB (1) | GB2284934B (fr) |
TW (1) | TW373828U (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335980A (ja) * | 1994-06-07 | 1995-12-22 | Fuji Electric Co Ltd | 半導体レーザ装置 |
JP3082695B2 (ja) | 1997-01-16 | 2000-08-28 | 日本電気株式会社 | 半導体レーザ装置、その製造方法 |
JP3735033B2 (ja) | 2000-12-07 | 2006-01-11 | シャープ株式会社 | 半導体レーザ装置 |
US6577656B2 (en) * | 2001-03-13 | 2003-06-10 | Finisar Corporation | System and method of packaging a laser/detector |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166591A (ja) * | 1987-12-22 | 1989-06-30 | Nec Kagoshima Ltd | レーザダイオード |
JPH02125687A (ja) * | 1988-11-04 | 1990-05-14 | Sony Corp | 半導体レーザ装置 |
JPH02125688A (ja) * | 1988-11-04 | 1990-05-14 | Sony Corp | 半導体レーザ装置 |
JPH02159084A (ja) * | 1988-12-12 | 1990-06-19 | Mitsubishi Electric Corp | モールド発光素子 |
JPH0724323B2 (ja) * | 1989-09-05 | 1995-03-15 | 三菱電機株式会社 | 半導体レーザ装置 |
US5140384A (en) * | 1990-06-14 | 1992-08-18 | Rohm Co., Ltd. | Semiconductor laser device mounted on a stem |
JPH04137580A (ja) * | 1990-09-27 | 1992-05-12 | Sharp Corp | 半導体レーザ用ステム |
EP0484887B1 (fr) * | 1990-11-07 | 1996-04-03 | Fuji Electric Co., Ltd. | Diode laser avec couche de protection sur sa face de sortie |
JP2823381B2 (ja) * | 1991-04-19 | 1998-11-11 | ローム株式会社 | 半導体レーザ装置 |
JPH04346281A (ja) * | 1991-05-23 | 1992-12-02 | Sharp Corp | 半導体レーザ素子 |
JPH04364791A (ja) * | 1991-06-12 | 1992-12-17 | Fuji Electric Co Ltd | 半導体レーザ装置 |
JPH0523563U (ja) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | 半導体レーザ装置 |
US5307362A (en) * | 1991-11-06 | 1994-04-26 | Rohm Co., Ltd. | Mold-type semiconductor laser device |
US5499262A (en) * | 1992-03-18 | 1996-03-12 | Rohm Co., Ltd. | Semiconductor laser light source unit |
TW253996B (fr) * | 1992-04-07 | 1995-08-11 | Fuji Electric Co Ltd | |
EP0592746B1 (fr) * | 1992-10-14 | 1997-03-19 | International Business Machines Corporation | Diode électroluminescente encapsulée et méthode d'encapsulation |
-
1993
- 1993-12-14 JP JP5312360A patent/JPH07170019A/ja active Pending
-
1994
- 1994-12-13 GB GB9425120A patent/GB2284934B/en not_active Expired - Fee Related
- 1994-12-13 FR FR9414983A patent/FR2713828B1/fr not_active Expired - Fee Related
- 1994-12-14 DE DE4444618A patent/DE4444618A1/de not_active Withdrawn
- 1994-12-14 TW TW087203177U patent/TW373828U/zh unknown
Also Published As
Publication number | Publication date |
---|---|
GB2284934A (en) | 1995-06-21 |
JPH07170019A (ja) | 1995-07-04 |
GB9425120D0 (en) | 1995-02-08 |
DE4444618A1 (de) | 1995-06-22 |
TW373828U (en) | 1999-11-01 |
GB2284934B (en) | 1997-06-25 |
FR2713828A1 (fr) | 1995-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |