FR2708786B1 - Micro-usinage par faisceau ionique focalisé avec auto-masquage. - Google Patents

Micro-usinage par faisceau ionique focalisé avec auto-masquage.

Info

Publication number
FR2708786B1
FR2708786B1 FR9407913A FR9407913A FR2708786B1 FR 2708786 B1 FR2708786 B1 FR 2708786B1 FR 9407913 A FR9407913 A FR 9407913A FR 9407913 A FR9407913 A FR 9407913A FR 2708786 B1 FR2708786 B1 FR 2708786B1
Authority
FR
France
Prior art keywords
masking
machining
micro
self
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9407913A
Other languages
English (en)
Other versions
FR2708786A1 (fr
Inventor
Christopher Graham Talbot
Douglas Masnaghetti
Hongyu Ximen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Publication of FR2708786A1 publication Critical patent/FR2708786A1/fr
Application granted granted Critical
Publication of FR2708786B1 publication Critical patent/FR2708786B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/02—Control circuits therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
FR9407913A 1993-06-28 1994-06-28 Micro-usinage par faisceau ionique focalisé avec auto-masquage. Expired - Fee Related FR2708786B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8453293A 1993-06-28 1993-06-28

Publications (2)

Publication Number Publication Date
FR2708786A1 FR2708786A1 (fr) 1995-02-10
FR2708786B1 true FR2708786B1 (fr) 1996-08-09

Family

ID=22185548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9407913A Expired - Fee Related FR2708786B1 (fr) 1993-06-28 1994-06-28 Micro-usinage par faisceau ionique focalisé avec auto-masquage.

Country Status (4)

Country Link
US (1) US5616921A (fr)
JP (2) JP2864347B2 (fr)
DE (1) DE4421517A1 (fr)
FR (1) FR2708786B1 (fr)

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JP3544438B2 (ja) * 1996-09-30 2004-07-21 セイコーインスツルメンツ株式会社 イオンビームによる加工装置
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US6031229A (en) * 1998-05-20 2000-02-29 Schlumberger Technologies, Inc. Automatic sequencing of FIB operations
US6262430B1 (en) * 1998-07-30 2001-07-17 Advanced Micro Devices, Inc. Integrated system for frontside navigation and access of multi-layer integrated circuits
US6069079A (en) * 1998-09-04 2000-05-30 Advanced Micro Devices, Inc. Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US20030093894A1 (en) * 1999-02-23 2003-05-22 Dugas Matthew P. Double layer patterning and technique for making a magnetic recording head
US6269533B2 (en) * 1999-02-23 2001-08-07 Advanced Research Corporation Method of making a patterned magnetic recording head
US7773340B2 (en) * 1999-02-23 2010-08-10 Advanced Research Corporation Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern
US6496328B1 (en) * 1999-12-30 2002-12-17 Advanced Research Corporation Low inductance, ferrite sub-gap substrate structure for surface film magnetic recording heads
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JP2004510295A (ja) 2000-09-20 2004-04-02 エフ・イ−・アイ・カンパニー 荷電粒子ビームシステムにおける同時の映像化と照射のためのリアルタイムモニタリング
US6621081B2 (en) 2001-01-10 2003-09-16 International Business Machines Corporation Method of pole tip sample preparation using FIB
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
CN1550037A (zh) 2001-08-27 2004-11-24 ����̩˹���������ι�˾ 用带电粒子束微细加工铜的方法
US6670610B2 (en) * 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
US7029595B1 (en) * 2002-08-21 2006-04-18 Advanced Micro Devices, Inc. Selective etch for uniform metal trace exposure and milling using focused ion beam system
US6958248B1 (en) * 2003-02-28 2005-10-25 Credence Systems Corporation Method and apparatus for the improvement of material/voltage contrast
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
US8144424B2 (en) 2003-12-19 2012-03-27 Dugas Matthew P Timing-based servo verify head and magnetic media made therewith
US7283317B2 (en) * 2004-01-30 2007-10-16 Advanced Research Corporation Apparatuses and methods for pre-erasing during manufacture of magnetic tape
US20100321824A1 (en) * 2004-02-18 2010-12-23 Dugas Matthew P Magnetic recording head having secondary sub-gaps
US7049157B2 (en) * 2004-03-11 2006-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology
US7450341B2 (en) * 2004-05-04 2008-11-11 Advanced Research Corporation Intergrated thin film subgap subpole structure for arbitrary gap pattern magnetic recording heads and method of making the same
US7115426B2 (en) * 2004-08-05 2006-10-03 Credence Systems Corporation Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate
JP4664041B2 (ja) * 2004-10-27 2011-04-06 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及び試料作製方法
GB2434248B (en) * 2006-01-12 2010-04-14 Zeiss Carl Smt Ltd Charged particle beam device
US7535000B2 (en) * 2006-05-23 2009-05-19 Dcg Systems, Inc. Method and system for identifying events in FIB
DE102006043895B9 (de) 2006-09-19 2012-02-09 Carl Zeiss Nts Gmbh Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen
DE102007054073A1 (de) * 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System und Verfahren zum Bearbeiten eines Objekts
WO2009094516A1 (fr) * 2008-01-23 2009-07-30 Advanced Research Corporation Têtes d'enregistrement comprenant des guides de bande intégrés et supports magnétiques constitués de telles têtes d'enregistrement
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
WO2009121073A1 (fr) * 2008-03-28 2009-10-01 Advanced Research Corporation Tête magnétique à motif d'écartement arbitraire à couche mince plane
EP2124244B1 (fr) * 2008-05-21 2011-08-03 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Outil de mesure à précision très élevée avec boucle de contrôle
JP2010025848A (ja) * 2008-07-23 2010-02-04 Sumitomo Electric Ind Ltd 断面観察方法
US8170832B2 (en) * 2008-10-31 2012-05-01 Fei Company Measurement and endpointing of sample thickness
US8536526B2 (en) * 2008-12-29 2013-09-17 International Business Machines Corporation Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit
WO2011014836A2 (fr) * 2009-07-31 2011-02-03 Advanced Research Corporation Système de commande d’effacement et procédés d’effacement pour cartouche de données en bande
JP5409685B2 (ja) * 2011-03-31 2014-02-05 株式会社日立ハイテクノロジーズ イオンビーム装置および加工方法
GB201308436D0 (en) * 2013-05-10 2013-06-19 Oxford Instr Nanotechnology Tools Ltd Metrology for preparation of thin samples
JP6210493B2 (ja) * 2014-03-14 2017-10-11 日本電子株式会社 荷電粒子ビーム照射装置及び荷電粒子ビーム照射方法
KR102301793B1 (ko) * 2014-12-18 2021-09-14 삼성전자주식회사 이미지 생성 방법 및 이를 수행하기 위한 이미징 시스템
CA3125346A1 (fr) * 2019-01-22 2020-07-30 Techinsights Inc. Systeme et procede de destratification par faisceau d'ions, systeme de surveillance de point d'extremite et procede associe
US11440151B2 (en) 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
US10971618B2 (en) 2019-08-02 2021-04-06 Applied Materials Israel Ltd. Generating milled structural elements with a flat upper surface
US11276557B2 (en) 2019-09-17 2022-03-15 Applied Materials Israel Ltd. Forming a vertical surface
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching
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Also Published As

Publication number Publication date
US5616921A (en) 1997-04-01
DE4421517A1 (de) 1995-01-05
JP2864347B2 (ja) 1999-03-03
FR2708786A1 (fr) 1995-02-10
JPH07176287A (ja) 1995-07-14
JPH10321180A (ja) 1998-12-04

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Legal Events

Date Code Title Description
RN Application for restoration
FC Decision of inpi director general to approve request for restoration
ST Notification of lapse
TP Transmission of property
CA Change of address
CD Change of name or company name
TP Transmission of property