FR2708786B1 - Micro-usinage par faisceau ionique focalisé avec auto-masquage. - Google Patents
Micro-usinage par faisceau ionique focalisé avec auto-masquage.Info
- Publication number
- FR2708786B1 FR2708786B1 FR9407913A FR9407913A FR2708786B1 FR 2708786 B1 FR2708786 B1 FR 2708786B1 FR 9407913 A FR9407913 A FR 9407913A FR 9407913 A FR9407913 A FR 9407913A FR 2708786 B1 FR2708786 B1 FR 2708786B1
- Authority
- FR
- France
- Prior art keywords
- masking
- machining
- micro
- self
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/02—Control circuits therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electron Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8453293A | 1993-06-28 | 1993-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2708786A1 FR2708786A1 (fr) | 1995-02-10 |
FR2708786B1 true FR2708786B1 (fr) | 1996-08-09 |
Family
ID=22185548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9407913A Expired - Fee Related FR2708786B1 (fr) | 1993-06-28 | 1994-06-28 | Micro-usinage par faisceau ionique focalisé avec auto-masquage. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5616921A (fr) |
JP (2) | JP2864347B2 (fr) |
DE (1) | DE4421517A1 (fr) |
FR (1) | FR2708786B1 (fr) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
US5916424A (en) * | 1996-04-19 | 1999-06-29 | Micrion Corporation | Thin film magnetic recording heads and systems and methods for manufacturing the same |
JP3544438B2 (ja) * | 1996-09-30 | 2004-07-21 | セイコーインスツルメンツ株式会社 | イオンビームによる加工装置 |
US5956565A (en) * | 1996-11-14 | 1999-09-21 | Matsushita Electronics Corporation | Analysis apparatus and analysis methods for semiconductor devices |
US5840630A (en) * | 1996-12-20 | 1998-11-24 | Schlumberger Technologies Inc. | FBI etching enhanced with 1,2 di-iodo-ethane |
JPH117608A (ja) | 1997-04-25 | 1999-01-12 | Fujitsu Ltd | 磁気ヘッド及びその製造方法 |
US6332962B1 (en) * | 1997-06-13 | 2001-12-25 | Micrion Corporation | Thin-film magnetic recording head manufacture using selective imaging |
US6288393B1 (en) * | 1998-01-28 | 2001-09-11 | Chipworks | Automated method of circuit analysis |
EP1051536B1 (fr) * | 1998-02-06 | 2003-07-30 | Richardson Technologies Inc | Procede pour le depot d'objet tridimensionnel |
EP1319733A3 (fr) * | 1998-02-06 | 2003-07-23 | Richardson Technologies Inc | Procédé et système pour le dépôt d'objet tridimensionnel |
US6031229A (en) * | 1998-05-20 | 2000-02-29 | Schlumberger Technologies, Inc. | Automatic sequencing of FIB operations |
US6262430B1 (en) * | 1998-07-30 | 2001-07-17 | Advanced Micro Devices, Inc. | Integrated system for frontside navigation and access of multi-layer integrated circuits |
US6069079A (en) * | 1998-09-04 | 2000-05-30 | Advanced Micro Devices, Inc. | Exposure of desired node in a multi-layer integrated circuit using FIB and RIE |
US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
US20030093894A1 (en) * | 1999-02-23 | 2003-05-22 | Dugas Matthew P. | Double layer patterning and technique for making a magnetic recording head |
US6269533B2 (en) * | 1999-02-23 | 2001-08-07 | Advanced Research Corporation | Method of making a patterned magnetic recording head |
US7773340B2 (en) * | 1999-02-23 | 2010-08-10 | Advanced Research Corporation | Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern |
US6496328B1 (en) * | 1999-12-30 | 2002-12-17 | Advanced Research Corporation | Low inductance, ferrite sub-gap substrate structure for surface film magnetic recording heads |
FR2805925B1 (fr) * | 2000-03-01 | 2004-10-22 | X Ion | Procede de controle de l'uniformite de traitement d'une surface par un faisceau de particules et equipement de mise en oeuvre |
US6751516B1 (en) | 2000-08-10 | 2004-06-15 | Richardson Technologies, Inc. | Method and system for direct writing, editing and transmitting a three dimensional part and imaging systems therefor |
JP2004510295A (ja) | 2000-09-20 | 2004-04-02 | エフ・イ−・アイ・カンパニー | 荷電粒子ビームシステムにおける同時の映像化と照射のためのリアルタイムモニタリング |
US6621081B2 (en) | 2001-01-10 | 2003-09-16 | International Business Machines Corporation | Method of pole tip sample preparation using FIB |
US6514866B2 (en) * | 2001-01-12 | 2003-02-04 | North Carolina State University | Chemically enhanced focused ion beam micro-machining of copper |
CN1550037A (zh) | 2001-08-27 | 2004-11-24 | ����̩˹���������ι�˾ | 用带电粒子束微细加工铜的方法 |
US6670610B2 (en) * | 2001-11-26 | 2003-12-30 | Applied Materials, Inc. | System and method for directing a miller |
DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
US20050103272A1 (en) * | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
US7029595B1 (en) * | 2002-08-21 | 2006-04-18 | Advanced Micro Devices, Inc. | Selective etch for uniform metal trace exposure and milling using focused ion beam system |
US6958248B1 (en) * | 2003-02-28 | 2005-10-25 | Credence Systems Corporation | Method and apparatus for the improvement of material/voltage contrast |
US7060196B2 (en) * | 2003-10-03 | 2006-06-13 | Credence Systems Corporation | FIB milling of copper over organic dielectrics |
US8144424B2 (en) | 2003-12-19 | 2012-03-27 | Dugas Matthew P | Timing-based servo verify head and magnetic media made therewith |
US7283317B2 (en) * | 2004-01-30 | 2007-10-16 | Advanced Research Corporation | Apparatuses and methods for pre-erasing during manufacture of magnetic tape |
US20100321824A1 (en) * | 2004-02-18 | 2010-12-23 | Dugas Matthew P | Magnetic recording head having secondary sub-gaps |
US7049157B2 (en) * | 2004-03-11 | 2006-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology |
US7450341B2 (en) * | 2004-05-04 | 2008-11-11 | Advanced Research Corporation | Intergrated thin film subgap subpole structure for arbitrary gap pattern magnetic recording heads and method of making the same |
US7115426B2 (en) * | 2004-08-05 | 2006-10-03 | Credence Systems Corporation | Method and apparatus for addressing thickness variations of a trench floor formed in a semiconductor substrate |
JP4664041B2 (ja) * | 2004-10-27 | 2011-04-06 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置及び試料作製方法 |
GB2434248B (en) * | 2006-01-12 | 2010-04-14 | Zeiss Carl Smt Ltd | Charged particle beam device |
US7535000B2 (en) * | 2006-05-23 | 2009-05-19 | Dcg Systems, Inc. | Method and system for identifying events in FIB |
DE102006043895B9 (de) | 2006-09-19 | 2012-02-09 | Carl Zeiss Nts Gmbh | Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen |
DE102007054073A1 (de) * | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System und Verfahren zum Bearbeiten eines Objekts |
WO2009094516A1 (fr) * | 2008-01-23 | 2009-07-30 | Advanced Research Corporation | Têtes d'enregistrement comprenant des guides de bande intégrés et supports magnétiques constitués de telles têtes d'enregistrement |
US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
WO2009121073A1 (fr) * | 2008-03-28 | 2009-10-01 | Advanced Research Corporation | Tête magnétique à motif d'écartement arbitraire à couche mince plane |
EP2124244B1 (fr) * | 2008-05-21 | 2011-08-03 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Outil de mesure à précision très élevée avec boucle de contrôle |
JP2010025848A (ja) * | 2008-07-23 | 2010-02-04 | Sumitomo Electric Ind Ltd | 断面観察方法 |
US8170832B2 (en) * | 2008-10-31 | 2012-05-01 | Fei Company | Measurement and endpointing of sample thickness |
US8536526B2 (en) * | 2008-12-29 | 2013-09-17 | International Business Machines Corporation | Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit |
WO2011014836A2 (fr) * | 2009-07-31 | 2011-02-03 | Advanced Research Corporation | Système de commande deffacement et procédés deffacement pour cartouche de données en bande |
JP5409685B2 (ja) * | 2011-03-31 | 2014-02-05 | 株式会社日立ハイテクノロジーズ | イオンビーム装置および加工方法 |
GB201308436D0 (en) * | 2013-05-10 | 2013-06-19 | Oxford Instr Nanotechnology Tools Ltd | Metrology for preparation of thin samples |
JP6210493B2 (ja) * | 2014-03-14 | 2017-10-11 | 日本電子株式会社 | 荷電粒子ビーム照射装置及び荷電粒子ビーム照射方法 |
KR102301793B1 (ko) * | 2014-12-18 | 2021-09-14 | 삼성전자주식회사 | 이미지 생성 방법 및 이를 수행하기 위한 이미징 시스템 |
CA3125346A1 (fr) * | 2019-01-22 | 2020-07-30 | Techinsights Inc. | Systeme et procede de destratification par faisceau d'ions, systeme de surveillance de point d'extremite et procede associe |
US11440151B2 (en) | 2019-06-07 | 2022-09-13 | Applied Materials Israel Ltd. | Milling a multi-layered object |
US10971618B2 (en) | 2019-08-02 | 2021-04-06 | Applied Materials Israel Ltd. | Generating milled structural elements with a flat upper surface |
US11276557B2 (en) | 2019-09-17 | 2022-03-15 | Applied Materials Israel Ltd. | Forming a vertical surface |
US11315754B2 (en) * | 2020-04-27 | 2022-04-26 | Applied Materials Israel Ltd. | Adaptive geometry for optimal focused ion beam etching |
US11636997B2 (en) * | 2020-07-01 | 2023-04-25 | Applied Materials Israel Ltd. | Uniform milling of adjacent materials using parallel scanning fib |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS532599B2 (fr) * | 1972-10-30 | 1978-01-30 | ||
US3787720A (en) * | 1973-03-28 | 1974-01-22 | Hughes Aircraft Co | Semiconductor vidicon and process for fabricating same |
JPS5856332A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | マスクの欠陥修正方法 |
DE3672378D1 (de) * | 1985-04-23 | 1990-08-09 | Seiko Instr Inc | Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand. |
AT386297B (de) * | 1985-09-11 | 1988-07-25 | Ims Ionen Mikrofab Syst | Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes |
US4717681A (en) * | 1986-05-19 | 1988-01-05 | Texas Instruments Incorporated | Method of making a heterojunction bipolar transistor with SIPOS |
US4961178A (en) * | 1986-10-21 | 1990-10-02 | Matsushita Electric Industrial Co., Ltd. | Method of erasable recording and reading of information |
US5035787A (en) * | 1987-07-22 | 1991-07-30 | Microbeam, Inc. | Method for repairing semiconductor masks and reticles |
JPH01154064A (ja) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | 微細パターンの形成方法 |
JP2569139B2 (ja) * | 1988-08-24 | 1997-01-08 | 株式会社日立製作所 | イオンビーム加工方法 |
JPH0262039A (ja) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
US5439763A (en) * | 1991-03-19 | 1995-08-08 | Hitachi, Ltd. | Optical mask and method of correcting the same |
-
1994
- 1994-06-20 DE DE4421517A patent/DE4421517A1/de not_active Ceased
- 1994-06-28 JP JP6146569A patent/JP2864347B2/ja not_active Expired - Fee Related
- 1994-06-28 FR FR9407913A patent/FR2708786B1/fr not_active Expired - Fee Related
- 1994-06-30 US US08/268,790 patent/US5616921A/en not_active Expired - Lifetime
-
1998
- 1998-04-10 JP JP10099592A patent/JPH10321180A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5616921A (en) | 1997-04-01 |
DE4421517A1 (de) | 1995-01-05 |
JP2864347B2 (ja) | 1999-03-03 |
FR2708786A1 (fr) | 1995-02-10 |
JPH07176287A (ja) | 1995-07-14 |
JPH10321180A (ja) | 1998-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RN | Application for restoration | ||
FC | Decision of inpi director general to approve request for restoration | ||
ST | Notification of lapse | ||
TP | Transmission of property | ||
CA | Change of address | ||
CD | Change of name or company name | ||
TP | Transmission of property |