FR2688903B1 - Circuit de generation de courant de reference. - Google Patents

Circuit de generation de courant de reference.

Info

Publication number
FR2688903B1
FR2688903B1 FR9205216A FR9205216A FR2688903B1 FR 2688903 B1 FR2688903 B1 FR 2688903B1 FR 9205216 A FR9205216 A FR 9205216A FR 9205216 A FR9205216 A FR 9205216A FR 2688903 B1 FR2688903 B1 FR 2688903B1
Authority
FR
France
Prior art keywords
generation circuit
reference current
current generation
circuit
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9205216A
Other languages
English (en)
French (fr)
Other versions
FR2688903A1 (fr
Inventor
Jae-Hyeong Lee
Dong-Jae Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2688903A1 publication Critical patent/FR2688903A1/fr
Application granted granted Critical
Publication of FR2688903B1 publication Critical patent/FR2688903B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
FR9205216A 1992-03-20 1992-04-28 Circuit de generation de courant de reference. Expired - Fee Related FR2688903B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004658A KR940005510B1 (ko) 1992-03-20 1992-03-20 기준전류 발생회로

Publications (2)

Publication Number Publication Date
FR2688903A1 FR2688903A1 (fr) 1993-09-24
FR2688903B1 true FR2688903B1 (fr) 1994-06-03

Family

ID=19330693

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9205216A Expired - Fee Related FR2688903B1 (fr) 1992-03-20 1992-04-28 Circuit de generation de courant de reference.

Country Status (7)

Country Link
JP (1) JPH0675648A (it)
KR (1) KR940005510B1 (it)
CN (1) CN1065532A (it)
DE (1) DE4214403A1 (it)
FR (1) FR2688903B1 (it)
GB (1) GB2265479A (it)
IT (1) IT1254947B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2829248B1 (fr) * 2001-09-03 2004-08-27 St Microelectronics Sa Generateur de courant pour faible tension d'alimentation
KR100588339B1 (ko) 2004-01-07 2006-06-09 삼성전자주식회사 오토 튜닝 기능을 갖는 전압-전류 변환회로를 구비한전류원 회로
JP4932322B2 (ja) * 2006-05-17 2012-05-16 オンセミコンダクター・トレーディング・リミテッド 発振回路
JP4989106B2 (ja) * 2006-05-17 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 発振回路
JP5771489B2 (ja) * 2011-09-15 2015-09-02 ルネサスエレクトロニクス株式会社 半導体装置
CN102385409B (zh) * 2011-10-14 2013-12-04 中国科学院电子学研究所 同时提供零温度系数电压和电流基准的vgs/r型基准源
JP6292901B2 (ja) * 2014-01-27 2018-03-14 エイブリック株式会社 基準電圧回路
CN107666143B (zh) * 2016-07-27 2019-03-22 帝奥微电子有限公司 负压电荷泵电路
CN106774593A (zh) * 2016-12-29 2017-05-31 北京兆易创新科技股份有限公司 一种电流源
CN107015594A (zh) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 一种偏置电流产生电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249139B2 (it) * 1974-09-04 1977-12-15
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
JPS63316114A (ja) * 1987-06-18 1988-12-23 Sony Corp 基準電圧発生回路
US4970415A (en) * 1989-07-18 1990-11-13 Gazelle Microcircuits, Inc. Circuit for generating reference voltages and reference currents
JP2804162B2 (ja) * 1989-09-08 1998-09-24 株式会社日立製作所 定電流定電圧回路
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路

Also Published As

Publication number Publication date
KR930020847A (ko) 1993-10-20
CN1065532A (zh) 1992-10-21
KR940005510B1 (ko) 1994-06-20
IT1254947B (it) 1995-10-11
FR2688903A1 (fr) 1993-09-24
JPH0675648A (ja) 1994-03-18
GB9209400D0 (en) 1992-06-17
ITMI921016A1 (it) 1993-10-29
GB2265479A (en) 1993-09-29
DE4214403A1 (de) 1993-09-23
ITMI921016A0 (it) 1992-04-29

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Legal Events

Date Code Title Description
ST Notification of lapse