CN1065532A - 基准电流产生电路 - Google Patents
基准电流产生电路 Download PDFInfo
- Publication number
- CN1065532A CN1065532A CN92103104A CN92103104A CN1065532A CN 1065532 A CN1065532 A CN 1065532A CN 92103104 A CN92103104 A CN 92103104A CN 92103104 A CN92103104 A CN 92103104A CN 1065532 A CN1065532 A CN 1065532A
- Authority
- CN
- China
- Prior art keywords
- voltage
- mos transistor
- reference current
- utmost point
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Control Of Electrical Variables (AREA)
- Dram (AREA)
- Amplifiers (AREA)
Abstract
一种基准电流产生电路,包括在第一及第二电压
间具有电阻装置和MOS晶体管用于输出恒定电压
的产生电路,以及一个接于恒定电压和第二电压之间
MOS二极管和电阻器R1,从而输出大小为恒定电
压减去MOS晶体管的阈值电压再除以电阻R1的
阻值的恒定电流。因此,可以输出一个不易受温度和
工艺变化影响的基准电流。
Description
本发明涉及一种半导体器件,更具体地说涉及一种半导体器件的基准电流产生装置。
半导体器件中使用的基准电流产生电路必须输出恒定的电流,而不受外界环境影响。因此,一个基准电流产生电路的必要特征主要有两点第一,应该送出在所需范围内的与供电电源波动无关的作为输出的恒定电流,第二,应该送出在所需范围内的与外界温度和/或工艺条件无关的作为输出的恒定电流。
图1显示了传统半导体器件的基准电流产生电路,其中流经PMOS晶体管的基准电流Iref可以以安培为单位表示为 (VtMNI)/(R4) 。这里,VtMN1代表NMOS晶体管的阀值电压。即,可以注意到,基准电流Iref与NMOS晶体管MN1的阀值电压Vt成比例。
因此,传统电路的缺点在于基准电流Iref随着MOS晶体管MN1的阀值电压而变化,而该阀值电压易于受温度和工艺条件变化的影响。
相应地,本发明的目的就是提供一种不受温度和制造工艺影响的基准电流产生电路。
为了实现本发明上述的和其它目的,于是推出了一种基准电流产生电路,它包括在第一和第二电压之间具有电阻装置和MOS晶体管的电压产生装置,用于输出恒定的电压,以及连接在恒定电压和第二电压之间的MOS二极管装置和电阻器,从而输出恒定电流其大小为恒定电压减去MOS晶体管的阀值电压除以电阻器的阻值。
下面通过参照附图详细描述本发明的最佳实施例,本发明的目的和其它优点将更为明显,其中:
图1显示了传统的半导体器件的基准电流产生电路;
图2显示了根据本发明的半导体器件的基准电流产生电路的一个实施例;
图3显示了根据本发明的半导体器件的基准电流产生电路的另一个实施例;以及
图4显示了根据本发明半导体器件的基准电流产生电路的另一个实施例。
参见图1,基准电流产生电路包括:一个PMOS晶体管MP1用于限流,其源极接于电源Vcc,其控制极接地(Vss限流PMOS管MP2其源极接电源Vcc,其漏极公共地接于其控制极;一个NMOS晶体管MN2,其控制极接于PMOS晶体管MP1的漏极,其漏极接PMOS晶体管MP2的漏极;一个NMOS晶体管MN1,其漏极接于NMOS晶体管MN2的控制极,其控制极接于NMOS晶体管MN2的源极,其源极接地Vss;以及一个接于NMOS晶体管MN1和地(Vss)之间的电阻器R1。
这里流经PMOS晶体管MP2的基准电流Iref满足下述等式
Tref= (VtMNI)/(R1) ……(1)
从上述等式中(1),可以注意到基准电流与NMOS晶体管MN1的阀值电压成比例。相应地,基准电流易于随温度及制造工艺的变化而改变。
图2显示了根据本发明基准电流产生电路的一个实施例。
图2的电路与图1电路相比进一步包含一个NMOS晶体管MN3,其控制极和漏极接于电阻器R1,而源极接地。
这里,流经PMOS晶体管MP2的基准电流Iref可写成下式。
Tref= (VtMNI- VtMN3)/(R1) ……(2)
在上述等式(2)中,基准电流Iref与NMOS晶体管MN1的阀值电压与NMOS晶体管MN3的阀值电压的差值成比例,从而,基准电流不在受温度变化和制造工艺的影响。
图3显示了根据本发明基准电流产生电路的另一个实施例。
在图3的电路中,与图2所示电路相比为了使NMOS晶体管MN1和MN3的阀值电压不同,一个反偏电压VBB被加于NM NMOS晶体管MN1和MN2的衬底以增加阀值电压,而且,NMOS晶体管MN3的源极和衬底接地Vss。
这里,流经PMOS晶体管MP2
Iref= (VtMNI- VtNM3)/(R1) ……(3)
从上述等式(3)中,可注意到所需的基准电流Iref可通过调整电阻器R1而获得。
图4显示了根据本发明的基准电流产生电路的另一个实施例。与图1的电路相比,图4所示的电路还进一步包括一个NMOS晶体管管MN5,其漏极和控制极接于电阻器R1,其源极接于衬底;以及一个PMOS基体管MP3,其源极接于衬底,其控制极和漏极接地。在NMOS晶体管MN1的情形中,源极电压变为高于地电位,其值为PMOS晶体管MP3的阀值电压,而衬底是接地的从而获得一个反偏效应。因此,由于流经PMOS晶体管MP2的电流与NMOS晶体管MN1和MN5之间阀值电压差成比例,于是即可获得一个不易受温度和制造工艺影响的基准电流产生电路。
现在,将图1的传统电路和图4中所示的本发明的电路中基准电流随温度的变化在下表中作一比较
在上表中,可以看到,根据本发明基准电流产生电路,基准电流随温度的变化小于传统的电路。因此,本发明的基准电流产生电路具有较好的基准电流特性,由于利用具有基准电流产生电路的半导体器件,从而增加了产品的可靠性。
Claims (8)
1、一种基准电流产生电路,包括在第一和第二电压之间具有电阻装置和MOS晶体管的电压产生装置,用于输出恒定的电压,以及在所述恒定电压与所述第二电压之间连接的MOS二极管装置和电阻器R1,从而输出一个大小为从所述恒定电压中减去所述MOS晶体管的阀值电压再除以所述的电阻器R1的阻值的恒定电流。
2、如权利要求1的基准电流产生电路,其中所述的电压产生装置包括:
一个第一MOS晶体管MP1,其源极接于所述的第一电压,其控制极接于所述的第二电压;
一个第二MOS晶体管MN1,其漏极接于所述的第一MOS晶体管的漏极,其源极接于所述的第二电压;
一个第三MOS晶体管MP2,其源极接于所述的第一电压,其控制极和漏极互接;以及
一个第四MOS晶体管MN2,其漏极接于所述第三MOS晶体管的控制极,其控制极接于所述第二MOS晶体管的漏极,其源极接于所述第二MOS晶体管的控制极。
3、如权利要求2的基准电流产生电路,其中所述的MOS二极管装置MN3包括接于所述电阻器的漏极和控制极,以及一个接于所述第二电压的源极。
4、如权利要求2的基准电流产生电路,其中所述的MOS二极管装置包括:一个第一MMOS晶体管MN5,其漏极和控制极接于所述的电阻器,其源极接于所述的衬底;以及一个第二PMOS晶体管MP3、其源极接于所述的第一NMOS晶体管的源极和所述的衬底,其漏极和控制极接于所述的第二电压。
5、如权利要求1的基准电流产生电路,其中所述的恒定电压大于所述MOS二极管装置的所述阀值电压。
6、如权利要求1的基准电流产生电路,其中所述的恒定电压利用反偏电压差调整所述的MOS二极管装置阀值电压差。
7、如权利要求1的基准电流产生装置,其中所述的电压产生装置包括:
一个第一MOS晶体管MP1,其源极接于所述的第一电压,其控制极接于所述的第二电压;
一个第二MOS晶体管MN1,其漏极接于所述第一MOS晶体管的漏极,其源极接于所述的第二电压,而其衬底加有一个第三电压;
一个第三MOS晶体管MP2,其源极接于所述第一电压,其控制极和漏极互接;以及
一个第四MOS晶体管MN2,其漏极接于所述第三MOS晶体管的控制极,其控制极接于所述第二MOS晶体管的漏极,其源极接于所述第二MOS晶体管的控制极,而其衬底加有所述第三电压。
8、如权利要求7的基准电流产生电路,其中所述的MOS二极管装置MN3包括接于所述电阻器的漏极和控制极,以及接于所述第二电压和衬底的源极。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92-4658 | 1992-03-20 | ||
KR1019920004658A KR940005510B1 (ko) | 1992-03-20 | 1992-03-20 | 기준전류 발생회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1065532A true CN1065532A (zh) | 1992-10-21 |
Family
ID=19330693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN92103104A Pending CN1065532A (zh) | 1992-03-20 | 1992-04-28 | 基准电流产生电路 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0675648A (zh) |
KR (1) | KR940005510B1 (zh) |
CN (1) | CN1065532A (zh) |
DE (1) | DE4214403A1 (zh) |
FR (1) | FR2688903B1 (zh) |
GB (1) | GB2265479A (zh) |
IT (1) | IT1254947B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101075801B (zh) * | 2006-05-17 | 2010-04-14 | 三洋电机株式会社 | 振荡电路 |
CN101075802B (zh) * | 2006-05-17 | 2010-06-02 | 三洋电机株式会社 | 振荡电路 |
CN102385409A (zh) * | 2011-10-14 | 2012-03-21 | 中国科学院电子学研究所 | 同时提供零温度系数电压和电流基准的vgs/r型基准源 |
CN103001582A (zh) * | 2011-09-15 | 2013-03-27 | 瑞萨电子株式会社 | 半导体装置 |
CN104808731A (zh) * | 2014-01-27 | 2015-07-29 | 精工电子有限公司 | 基准电压电路 |
CN106774593A (zh) * | 2016-12-29 | 2017-05-31 | 北京兆易创新科技股份有限公司 | 一种电流源 |
CN107015594A (zh) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | 一种偏置电流产生电路 |
CN107666143A (zh) * | 2016-07-27 | 2018-02-06 | 帝奥微电子有限公司 | 负压电荷泵电路 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829248B1 (fr) * | 2001-09-03 | 2004-08-27 | St Microelectronics Sa | Generateur de courant pour faible tension d'alimentation |
KR100588339B1 (ko) | 2004-01-07 | 2006-06-09 | 삼성전자주식회사 | 오토 튜닝 기능을 갖는 전압-전류 변환회로를 구비한전류원 회로 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249139B2 (zh) * | 1974-09-04 | 1977-12-15 | ||
IT1179823B (it) * | 1984-11-22 | 1987-09-16 | Cselt Centro Studi Lab Telecom | Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos |
JPS62188255A (ja) * | 1986-02-13 | 1987-08-17 | Toshiba Corp | 基準電圧発生回路 |
JPS63316114A (ja) * | 1987-06-18 | 1988-12-23 | Sony Corp | 基準電圧発生回路 |
US4970415A (en) * | 1989-07-18 | 1990-11-13 | Gazelle Microcircuits, Inc. | Circuit for generating reference voltages and reference currents |
JP2804162B2 (ja) * | 1989-09-08 | 1998-09-24 | 株式会社日立製作所 | 定電流定電圧回路 |
JP2809768B2 (ja) * | 1989-11-30 | 1998-10-15 | 株式会社東芝 | 基準電位発生回路 |
-
1992
- 1992-03-20 KR KR1019920004658A patent/KR940005510B1/ko active IP Right Grant
- 1992-04-28 FR FR9205216A patent/FR2688903B1/fr not_active Expired - Fee Related
- 1992-04-28 CN CN92103104A patent/CN1065532A/zh active Pending
- 1992-04-29 IT ITMI921016A patent/IT1254947B/it active IP Right Grant
- 1992-04-30 GB GB9209400A patent/GB2265479A/en not_active Withdrawn
- 1992-04-30 DE DE4214403A patent/DE4214403A1/de not_active Ceased
- 1992-05-15 JP JP4123528A patent/JPH0675648A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101075801B (zh) * | 2006-05-17 | 2010-04-14 | 三洋电机株式会社 | 振荡电路 |
CN101075802B (zh) * | 2006-05-17 | 2010-06-02 | 三洋电机株式会社 | 振荡电路 |
CN103001582A (zh) * | 2011-09-15 | 2013-03-27 | 瑞萨电子株式会社 | 半导体装置 |
CN103001582B (zh) * | 2011-09-15 | 2017-03-01 | 瑞萨电子株式会社 | 半导体装置 |
CN102385409A (zh) * | 2011-10-14 | 2012-03-21 | 中国科学院电子学研究所 | 同时提供零温度系数电压和电流基准的vgs/r型基准源 |
CN104808731A (zh) * | 2014-01-27 | 2015-07-29 | 精工电子有限公司 | 基准电压电路 |
CN104808731B (zh) * | 2014-01-27 | 2018-06-29 | 艾普凌科有限公司 | 基准电压电路 |
CN107666143A (zh) * | 2016-07-27 | 2018-02-06 | 帝奥微电子有限公司 | 负压电荷泵电路 |
CN107666143B (zh) * | 2016-07-27 | 2019-03-22 | 帝奥微电子有限公司 | 负压电荷泵电路 |
CN106774593A (zh) * | 2016-12-29 | 2017-05-31 | 北京兆易创新科技股份有限公司 | 一种电流源 |
CN107015594A (zh) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | 一种偏置电流产生电路 |
Also Published As
Publication number | Publication date |
---|---|
KR930020847A (ko) | 1993-10-20 |
KR940005510B1 (ko) | 1994-06-20 |
FR2688903B1 (fr) | 1994-06-03 |
IT1254947B (it) | 1995-10-11 |
FR2688903A1 (fr) | 1993-09-24 |
JPH0675648A (ja) | 1994-03-18 |
GB9209400D0 (en) | 1992-06-17 |
ITMI921016A1 (it) | 1993-10-29 |
GB2265479A (en) | 1993-09-29 |
DE4214403A1 (de) | 1993-09-23 |
ITMI921016A0 (it) | 1992-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101059901B1 (ko) | 정전압 회로 | |
KR940003406B1 (ko) | 내부 전원전압 발생회로 | |
KR100957228B1 (ko) | 반도체 소자의 밴드갭 기준전압 발생회로 | |
US7119604B2 (en) | Back-bias voltage regulator having temperature and process variation compensation and related method of regulating a back-bias voltage | |
US7592862B2 (en) | Digital temperature sensing device using temperature depending characteristic of contact resistance | |
CN102246115A (zh) | 用于半导体芯片内金属电阻器的温度补偿的电路、调修和布图 | |
CN1065532A (zh) | 基准电流产生电路 | |
KR0141157B1 (ko) | 기준전압발생회로 | |
US7068547B2 (en) | Internal voltage generating circuit in semiconductor memory device | |
US6721211B2 (en) | Voltage generator for semiconductor memory device | |
KR100549945B1 (ko) | 내부전원 전압발생회로 | |
KR950010284B1 (ko) | 기준전압 발생회로 | |
KR100748459B1 (ko) | 반도체 메모리의 벌크 전압 레벨 감지 장치 | |
TW202303330A (zh) | 參考電流/電壓產生器與電路系統 | |
KR100410633B1 (ko) | 정전류 발생회로 | |
KR100390994B1 (ko) | 반도체 메모리 소자의 전압 발생장치 | |
KR100462371B1 (ko) | 밴드갭기준전압발생장치 | |
KR100316065B1 (ko) | 전압강하 변환회로 | |
KR100596861B1 (ko) | 내부전압 발생장치 | |
KR19980078497A (ko) | 기준전압 발생기 | |
KR100694466B1 (ko) | 전류 보상 바이어스 회로 | |
KR100255160B1 (ko) | 저 전력 온칩 전압 레퍼런스 회로 | |
KR0180460B1 (ko) | 기준전압 발생회로 | |
KR100496792B1 (ko) | 기준전압발생회로 | |
KR950005461Y1 (ko) | 내부전압 발생회로 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C01 | Deemed withdrawal of patent application (patent law 1993) | ||
WD01 | Invention patent application deemed withdrawn after publication |