ITMI921016A0 - Circuiti generatore di corrente di riferimento - Google Patents

Circuiti generatore di corrente di riferimento

Info

Publication number
ITMI921016A0
ITMI921016A0 IT92MI1016A ITMI921016A ITMI921016A0 IT MI921016 A0 ITMI921016 A0 IT MI921016A0 IT 92MI1016 A IT92MI1016 A IT 92MI1016A IT MI921016 A ITMI921016 A IT MI921016A IT MI921016 A0 ITMI921016 A0 IT MI921016A0
Authority
IT
Italy
Prior art keywords
reference current
current generator
generator circuits
circuits
generator
Prior art date
Application number
IT92MI1016A
Other languages
English (en)
Inventor
Jae-Heyong Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI921016A0 publication Critical patent/ITMI921016A0/it
Publication of ITMI921016A1 publication Critical patent/ITMI921016A1/it
Application granted granted Critical
Publication of IT1254947B publication Critical patent/IT1254947B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
ITMI921016A 1992-03-20 1992-04-29 Circuito generatore di corrente di riferimento IT1254947B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004658A KR940005510B1 (ko) 1992-03-20 1992-03-20 기준전류 발생회로

Publications (3)

Publication Number Publication Date
ITMI921016A0 true ITMI921016A0 (it) 1992-04-29
ITMI921016A1 ITMI921016A1 (it) 1993-10-29
IT1254947B IT1254947B (it) 1995-10-11

Family

ID=19330693

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921016A IT1254947B (it) 1992-03-20 1992-04-29 Circuito generatore di corrente di riferimento

Country Status (7)

Country Link
JP (1) JPH0675648A (it)
KR (1) KR940005510B1 (it)
CN (1) CN1065532A (it)
DE (1) DE4214403A1 (it)
FR (1) FR2688903B1 (it)
GB (1) GB2265479A (it)
IT (1) IT1254947B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2829248B1 (fr) * 2001-09-03 2004-08-27 St Microelectronics Sa Generateur de courant pour faible tension d'alimentation
KR100588339B1 (ko) 2004-01-07 2006-06-09 삼성전자주식회사 오토 튜닝 기능을 갖는 전압-전류 변환회로를 구비한전류원 회로
JP4932322B2 (ja) * 2006-05-17 2012-05-16 オンセミコンダクター・トレーディング・リミテッド 発振回路
JP4989106B2 (ja) * 2006-05-17 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 発振回路
JP5771489B2 (ja) * 2011-09-15 2015-09-02 ルネサスエレクトロニクス株式会社 半導体装置
CN102385409B (zh) * 2011-10-14 2013-12-04 中国科学院电子学研究所 同时提供零温度系数电压和电流基准的vgs/r型基准源
JP6292901B2 (ja) * 2014-01-27 2018-03-14 エイブリック株式会社 基準電圧回路
CN107666143B (zh) * 2016-07-27 2019-03-22 帝奥微电子有限公司 负压电荷泵电路
CN106774593A (zh) * 2016-12-29 2017-05-31 北京兆易创新科技股份有限公司 一种电流源
CN107015594A (zh) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 一种偏置电流产生电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249139B2 (it) * 1974-09-04 1977-12-15
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
JPS63316114A (ja) * 1987-06-18 1988-12-23 Sony Corp 基準電圧発生回路
US4970415A (en) * 1989-07-18 1990-11-13 Gazelle Microcircuits, Inc. Circuit for generating reference voltages and reference currents
JP2804162B2 (ja) * 1989-09-08 1998-09-24 株式会社日立製作所 定電流定電圧回路
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路

Also Published As

Publication number Publication date
KR930020847A (ko) 1993-10-20
CN1065532A (zh) 1992-10-21
KR940005510B1 (ko) 1994-06-20
FR2688903B1 (fr) 1994-06-03
IT1254947B (it) 1995-10-11
FR2688903A1 (fr) 1993-09-24
JPH0675648A (ja) 1994-03-18
GB9209400D0 (en) 1992-06-17
ITMI921016A1 (it) 1993-10-29
GB2265479A (en) 1993-09-29
DE4214403A1 (de) 1993-09-23

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Legal Events

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0001 Granted