FR2685152B1 - Dispositif a couplage de charge. - Google Patents

Dispositif a couplage de charge.

Info

Publication number
FR2685152B1
FR2685152B1 FR9214260A FR9214260A FR2685152B1 FR 2685152 B1 FR2685152 B1 FR 2685152B1 FR 9214260 A FR9214260 A FR 9214260A FR 9214260 A FR9214260 A FR 9214260A FR 2685152 B1 FR2685152 B1 FR 2685152B1
Authority
FR
France
Prior art keywords
coupling device
load coupling
load
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9214260A
Other languages
English (en)
Other versions
FR2685152A1 (fr
Inventor
Peter James Pool
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
EEV Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EEV Ltd filed Critical EEV Ltd
Publication of FR2685152A1 publication Critical patent/FR2685152A1/fr
Application granted granted Critical
Publication of FR2685152B1 publication Critical patent/FR2685152B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/1485—Frame transfer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14856—Time-delay and integration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
FR9214260A 1991-11-27 1992-11-26 Dispositif a couplage de charge. Expired - Fee Related FR2685152B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9125232A GB2262010B (en) 1991-11-27 1991-11-27 Charge - coupled device

Publications (2)

Publication Number Publication Date
FR2685152A1 FR2685152A1 (fr) 1993-06-18
FR2685152B1 true FR2685152B1 (fr) 1994-12-23

Family

ID=10705330

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9214260A Expired - Fee Related FR2685152B1 (fr) 1991-11-27 1992-11-26 Dispositif a couplage de charge.

Country Status (3)

Country Link
US (1) US5308970A (fr)
FR (1) FR2685152B1 (fr)
GB (1) GB2262010B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262441B2 (ja) * 1994-02-04 2002-03-04 キヤノン株式会社 リニアイメージセンサ及び画像読取装置
JP3482689B2 (ja) * 1994-05-27 2003-12-22 ソニー株式会社 固体撮像装置及びこれを用いたバーコード読取り装置
DE69632172T2 (de) * 1995-02-21 2005-04-21 Dalsa Corp Ladungsgekoppelte bildaufnahmeanordnung
JP2870454B2 (ja) * 1995-06-16 1999-03-17 日本電気株式会社 カラーリニアイメージセンサ
JPH10233883A (ja) * 1996-12-20 1998-09-02 Seiko Epson Corp Ｃｃｄ撮像素子及び画像読取装置
JPH11136464A (ja) * 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 画像読取装置
JPH11205532A (ja) * 1998-01-14 1999-07-30 Toshiba Corp 固体撮像装置
US6770860B1 (en) 2000-02-14 2004-08-03 Dalsa, Inc. Dual line integrating line scan sensor
US7102679B1 (en) * 2000-04-25 2006-09-05 Hewlett-Packard Development Company, Lp. Photosensor array using multiple exposures to reduce thermal noise
JP4660086B2 (ja) * 2003-12-01 2011-03-30 三洋電機株式会社 固体撮像素子
US7602431B2 (en) * 2005-09-28 2009-10-13 Sony Corporation Solid-state imaging element and solid-state imaging apparatus
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1020656A (en) * 1973-03-22 1977-11-08 Choong-Ki Kim Buried-channel charge-coupled linear imaging device
JPS58209269A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 固体撮像装置
FR2548499B1 (fr) * 1983-06-17 1985-10-18 Thomson Csf Dispositif photosensible a l'etat solide
KR850001441A (ko) * 1983-07-01 1985-03-18 이노우에 도시야 고체 촬상장치
US4598321A (en) * 1983-12-19 1986-07-01 Rca Corporation CCD imagers with registers partitioned for simultaneous charge transfers in opposing directions
FR2580133B1 (fr) * 1985-04-05 1988-06-24 Thomson Csf
US4656520A (en) * 1985-07-16 1987-04-07 Rca Corporation Frame-transfer CCD imager with recirculating frame storage register
US4918506A (en) * 1985-09-13 1990-04-17 Fairchild Camera & Instrument Corporation Selectable resolution line-scan image sensor
JPH06105560B2 (ja) * 1985-09-17 1994-12-21 沖電気工業株式会社 電荷移送装置
GB8610483D0 (en) * 1986-04-29 1986-09-17 British Aerospace Imaging apparatus
JPS6386974A (ja) * 1986-09-30 1988-04-18 Nec Corp 電荷転送撮像素子とその駆動方法
FR2608315B1 (fr) * 1986-12-16 1989-02-17 Thomson Csf Dispositif anti-eblouissement pour capteur d'images a transfert de charges et capteur d'images comportant un tel dispositif
JPH01164165A (ja) * 1987-12-21 1989-06-28 Canon Inc センサ駆動装置
JPH0262170A (ja) * 1988-08-27 1990-03-02 Nec Corp 固体撮像装置
JPH0693768B2 (ja) * 1988-12-27 1994-11-16 日本電気株式会社 撮像信号処理装置
US5043819A (en) * 1989-12-05 1991-08-27 Samsung Electronics Co., Ltd. CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements
JP2671587B2 (ja) * 1990-09-10 1997-10-29 日本電気株式会社 電荷転送装置

Also Published As

Publication number Publication date
GB9125232D0 (en) 1992-01-29
FR2685152A1 (fr) 1993-06-18
US5308970A (en) 1994-05-03
GB2262010A (en) 1993-06-02
GB2262010B (en) 1996-01-17

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Legal Events

Date Code Title Description
ST Notification of lapse
ST Notification of lapse