FR2504337B1 - Dispositif a couplage de charge - Google Patents

Dispositif a couplage de charge

Info

Publication number
FR2504337B1
FR2504337B1 FR8206291A FR8206291A FR2504337B1 FR 2504337 B1 FR2504337 B1 FR 2504337B1 FR 8206291 A FR8206291 A FR 8206291A FR 8206291 A FR8206291 A FR 8206291A FR 2504337 B1 FR2504337 B1 FR 2504337B1
Authority
FR
France
Prior art keywords
coupling device
load coupling
load
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8206291A
Other languages
English (en)
Other versions
FR2504337A1 (fr
Inventor
Leonard Jan Maria Esser
Ludovicus Gerardus Mar Heldens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2504337A1 publication Critical patent/FR2504337A1/fr
Application granted granted Critical
Publication of FR2504337B1 publication Critical patent/FR2504337B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR8206291A 1981-04-16 1982-04-09 Dispositif a couplage de charge Expired FR2504337B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8101883A NL8101883A (nl) 1981-04-16 1981-04-16 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
FR2504337A1 FR2504337A1 (fr) 1982-10-22
FR2504337B1 true FR2504337B1 (fr) 1987-05-15

Family

ID=19837365

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8206291A Expired FR2504337B1 (fr) 1981-04-16 1982-04-09 Dispositif a couplage de charge

Country Status (8)

Country Link
US (1) US4468684A (fr)
JP (1) JPS5944790B2 (fr)
DE (1) DE3213408A1 (fr)
FR (1) FR2504337B1 (fr)
GB (1) GB2097186B (fr)
IE (1) IE53906B1 (fr)
IT (1) IT1201940B (fr)
NL (1) NL8101883A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8101887A (nl) * 1981-04-16 1982-11-16 Philips Nv Televisie-opneeminrichting voorzien van een vaste-stof beeldopneempaneel.
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same
KR960002645B1 (ko) * 1992-04-03 1996-02-24 엘지반도체주식회사 전하 전송장치 및 고체 촬상장치
KR0172854B1 (ko) * 1995-08-02 1999-02-01 문정환 씨씨디 고체촬상소자 및 그의 신호처리방법
US5965910A (en) * 1997-04-29 1999-10-12 Ohmeda Inc. Large cell charge coupled device for spectroscopy
JP3397151B2 (ja) * 1998-12-10 2003-04-14 日本電気株式会社 固体撮像素子の駆動方法
US7038723B1 (en) * 1999-04-26 2006-05-02 Matsushita Electric Industrial Co., Ltd. Solid state imaging device, method for driving the same and camera using the same
US6995795B1 (en) * 2000-09-12 2006-02-07 Eastman Kodak Company Method for reducing dark current
EP1679749A1 (fr) * 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Photodiode à Semiconducteur et Procédé de fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896484A (en) * 1970-10-06 1975-07-22 Nishizawa Junichi Intrinsic semiconductor charge transfer device using alternate transfer of electrons and holes
SU535604A1 (ru) * 1974-08-09 1976-11-15 Предприятие П/Я В-2892 Регистр сдвига на приборах с зар довой св зью
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
NL7510311A (nl) * 1975-09-02 1977-03-04 Philips Nv Ladingsoverdrachtinrichting.
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4229754A (en) * 1978-12-26 1980-10-21 Rockwell International Corporation CCD Imager with multi-spectral capability
US4255760A (en) * 1979-09-28 1981-03-10 Eastman Kodak Company Multiple, superposed-channel color image sensor

Also Published As

Publication number Publication date
GB2097186A (en) 1982-10-27
IE53906B1 (en) 1989-04-12
US4468684A (en) 1984-08-28
IE820860L (en) 1982-10-16
JPS57181165A (en) 1982-11-08
FR2504337A1 (fr) 1982-10-22
DE3213408A1 (de) 1982-12-16
NL8101883A (nl) 1982-11-16
GB2097186B (en) 1985-02-27
IT8220707A0 (it) 1982-04-13
IT1201940B (it) 1989-02-02
JPS5944790B2 (ja) 1984-11-01

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Legal Events

Date Code Title Description
ST Notification of lapse