IT8220707A0 - Dispositivo ad accoppiamento di cariche. - Google Patents

Dispositivo ad accoppiamento di cariche.

Info

Publication number
IT8220707A0
IT8220707A0 IT8220707A IT2070782A IT8220707A0 IT 8220707 A0 IT8220707 A0 IT 8220707A0 IT 8220707 A IT8220707 A IT 8220707A IT 2070782 A IT2070782 A IT 2070782A IT 8220707 A0 IT8220707 A0 IT 8220707A0
Authority
IT
Italy
Prior art keywords
coupling device
charge coupling
charge
coupling
Prior art date
Application number
IT8220707A
Other languages
English (en)
Other versions
IT1201940B (it
Inventor
Leonard Jan Maria Esser
Ludovicus Gerardus Mar Heldens
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8220707A0 publication Critical patent/IT8220707A0/it
Application granted granted Critical
Publication of IT1201940B publication Critical patent/IT1201940B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/468—Four-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers
IT20707/82A 1981-04-16 1982-04-13 Dispositivo ad accoppiamento di cariche IT1201940B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8101883A NL8101883A (nl) 1981-04-16 1981-04-16 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
IT8220707A0 true IT8220707A0 (it) 1982-04-13
IT1201940B IT1201940B (it) 1989-02-02

Family

ID=19837365

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20707/82A IT1201940B (it) 1981-04-16 1982-04-13 Dispositivo ad accoppiamento di cariche

Country Status (8)

Country Link
US (1) US4468684A (it)
JP (1) JPS5944790B2 (it)
DE (1) DE3213408A1 (it)
FR (1) FR2504337B1 (it)
GB (1) GB2097186B (it)
IE (1) IE53906B1 (it)
IT (1) IT1201940B (it)
NL (1) NL8101883A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8101887A (nl) * 1981-04-16 1982-11-16 Philips Nv Televisie-opneeminrichting voorzien van een vaste-stof beeldopneempaneel.
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same
KR960002645B1 (ko) * 1992-04-03 1996-02-24 엘지반도체주식회사 전하 전송장치 및 고체 촬상장치
KR0172854B1 (ko) * 1995-08-02 1999-02-01 문정환 씨씨디 고체촬상소자 및 그의 신호처리방법
US5965910A (en) * 1997-04-29 1999-10-12 Ohmeda Inc. Large cell charge coupled device for spectroscopy
JP3397151B2 (ja) * 1998-12-10 2003-04-14 日本電気株式会社 固体撮像素子の駆動方法
US7038723B1 (en) * 1999-04-26 2006-05-02 Matsushita Electric Industrial Co., Ltd. Solid state imaging device, method for driving the same and camera using the same
US6995795B1 (en) * 2000-09-12 2006-02-07 Eastman Kodak Company Method for reducing dark current
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896484A (en) * 1970-10-06 1975-07-22 Nishizawa Junichi Intrinsic semiconductor charge transfer device using alternate transfer of electrons and holes
SU535604A1 (ru) * 1974-08-09 1976-11-15 Предприятие П/Я В-2892 Регистр сдвига на приборах с зар довой св зью
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
NL7510311A (nl) * 1975-09-02 1977-03-04 Philips Nv Ladingsoverdrachtinrichting.
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4229754A (en) * 1978-12-26 1980-10-21 Rockwell International Corporation CCD Imager with multi-spectral capability
US4255760A (en) * 1979-09-28 1981-03-10 Eastman Kodak Company Multiple, superposed-channel color image sensor

Also Published As

Publication number Publication date
FR2504337B1 (fr) 1987-05-15
US4468684A (en) 1984-08-28
IE820860L (en) 1982-10-16
JPS57181165A (en) 1982-11-08
GB2097186A (en) 1982-10-27
IT1201940B (it) 1989-02-02
GB2097186B (en) 1985-02-27
NL8101883A (nl) 1982-11-16
JPS5944790B2 (ja) 1984-11-01
FR2504337A1 (fr) 1982-10-22
IE53906B1 (en) 1989-04-12
DE3213408A1 (de) 1982-12-16

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