FR2680428B1 - Dispositif de memoire a semi-conducteurs ayant une fonction de selection de bloc avec de faibles consommations de courant. - Google Patents

Dispositif de memoire a semi-conducteurs ayant une fonction de selection de bloc avec de faibles consommations de courant.

Info

Publication number
FR2680428B1
FR2680428B1 FR9209898A FR9209898A FR2680428B1 FR 2680428 B1 FR2680428 B1 FR 2680428B1 FR 9209898 A FR9209898 A FR 9209898A FR 9209898 A FR9209898 A FR 9209898A FR 2680428 B1 FR2680428 B1 FR 2680428B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
current consumption
low current
selection function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9209898A
Other languages
English (en)
French (fr)
Other versions
FR2680428A1 (fr
Inventor
Yong-Sik Seok
Dong-Sun Min
Jun Dong-Soo
Jae-Gu Roh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2680428A1 publication Critical patent/FR2680428A1/fr
Application granted granted Critical
Publication of FR2680428B1 publication Critical patent/FR2680428B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR9209898A 1991-08-14 1992-08-11 Dispositif de memoire a semi-conducteurs ayant une fonction de selection de bloc avec de faibles consommations de courant. Expired - Lifetime FR2680428B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014100A KR950004853B1 (ko) 1991-08-14 1991-08-14 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
FR2680428A1 FR2680428A1 (fr) 1993-02-19
FR2680428B1 true FR2680428B1 (fr) 1995-05-19

Family

ID=19318647

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9209898A Expired - Lifetime FR2680428B1 (fr) 1991-08-14 1992-08-11 Dispositif de memoire a semi-conducteurs ayant une fonction de selection de bloc avec de faibles consommations de courant.

Country Status (8)

Country Link
US (1) US5327389A (OSRAM)
JP (1) JPH0713868B2 (OSRAM)
KR (1) KR950004853B1 (OSRAM)
DE (1) DE4226825C2 (OSRAM)
FR (1) FR2680428B1 (OSRAM)
GB (1) GB2259383A (OSRAM)
IT (1) IT1256055B (OSRAM)
TW (1) TW220010B (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130163A (ja) * 1993-11-01 1995-05-19 Matsushita Electron Corp 半導体メモリ
JP2725570B2 (ja) * 1993-11-02 1998-03-11 日本電気株式会社 半導体メモリ装置
KR0120592B1 (ko) * 1994-09-09 1997-10-20 김주용 신호 변환 장치를 갖고 있는 어드레스 입력버퍼
JPH08194679A (ja) * 1995-01-19 1996-07-30 Texas Instr Japan Ltd ディジタル信号処理方法及び装置並びにメモリセル読出し方法
KR0142962B1 (ko) * 1995-05-12 1998-08-17 김광호 계급적 컬럼선택라인구조를 가지는 반도체 메모리 장치
US5729501A (en) * 1995-09-08 1998-03-17 International Business Machines Corporation High Speed SRAM with or-gate sense
KR100203145B1 (ko) 1996-06-29 1999-06-15 김영환 반도체 메모리 소자의 뱅크 분산 방법
KR100311035B1 (ko) * 1997-11-21 2002-02-28 윤종용 효율적으로 배치된 패드들을 갖는 반도체 메모리 장치
US6038634A (en) * 1998-02-02 2000-03-14 International Business Machines Corporation Intra-unit block addressing system for memory
US6118726A (en) * 1998-02-02 2000-09-12 International Business Machines Corporation Shared row decoder
US6246630B1 (en) 1998-02-02 2001-06-12 International Business Machines Corporation Intra-unit column address increment system for memory
US6002275A (en) * 1998-02-02 1999-12-14 International Business Machines Corporation Single ended read write drive for memory
US6944087B2 (en) * 2001-02-24 2005-09-13 Intel Corporation Method and apparatus for off boundary memory access
US6347052B1 (en) 2000-08-31 2002-02-12 Advanced Micro Devices Inc. Word line decoding architecture in a flash memory
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US9817595B2 (en) 2016-01-28 2017-11-14 Apple Inc. Management of peak power consumed by multiple memory devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (ja) * 1981-07-08 1983-01-19 Toshiba Corp 半導体装置
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS6059588A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体記憶装置
JPS60231996A (ja) * 1984-04-28 1985-11-18 Mitsubishi Electric Corp 半導体記憶装置
JPS60234295A (ja) * 1984-05-04 1985-11-20 Fujitsu Ltd 半導体記憶装置
JPS62136919A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp ドライバ−回路
NL8602178A (nl) * 1986-08-27 1988-03-16 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
KR880008330A (ko) * 1986-12-30 1988-08-30 강진구 스테이틱 램의 프리차아지 시스템
JPS643896A (en) * 1987-06-24 1989-01-09 Mitsubishi Electric Corp Semiconductor dynamic ram
JPS6457495A (en) * 1987-08-28 1989-03-03 Hitachi Ltd Semiconductor memory device
EP0317666B1 (en) * 1987-11-23 1992-02-19 Koninklijke Philips Electronics N.V. Fast operating static ram memory with high storage capacity

Also Published As

Publication number Publication date
KR930005025A (ko) 1993-03-23
JPH05198164A (ja) 1993-08-06
GB2259383A (en) 1993-03-10
US5327389A (en) 1994-07-05
IT1256055B (it) 1995-11-23
FR2680428A1 (fr) 1993-02-19
TW220010B (OSRAM) 1994-02-01
ITMI921988A1 (it) 1994-02-13
ITMI921988A0 (it) 1992-08-13
DE4226825A1 (de) 1993-02-18
DE4226825C2 (de) 1997-05-15
KR950004853B1 (ko) 1995-05-15
GB9217372D0 (en) 1992-09-30
JPH0713868B2 (ja) 1995-02-15

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