FR2592227A1 - Dispositif photoemissif a semi-conducteur de type directionnel - Google Patents

Dispositif photoemissif a semi-conducteur de type directionnel

Info

Publication number
FR2592227A1
FR2592227A1 FR8618156A FR8618156A FR2592227A1 FR 2592227 A1 FR2592227 A1 FR 2592227A1 FR 8618156 A FR8618156 A FR 8618156A FR 8618156 A FR8618156 A FR 8618156A FR 2592227 A1 FR2592227 A1 FR 2592227A1
Authority
FR
France
Prior art keywords
photoemissitive
type semiconductor
active region
directional type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8618156A
Other languages
English (en)
Other versions
FR2592227B1 (fr
Inventor
Fumio Inaba
Hiromasa Ito
Noriaki Onodera
Akira Mizuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60291536A external-priority patent/JPS62150784A/ja
Priority claimed from JP61004032A external-priority patent/JPS62162372A/ja
Priority claimed from JP61002891A external-priority patent/JPS62162383A/ja
Application filed by Individual filed Critical Individual
Publication of FR2592227A1 publication Critical patent/FR2592227A1/fr
Application granted granted Critical
Publication of FR2592227B1 publication Critical patent/FR2592227B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne les dispositifs photoémissifs à semi-conducteur. Elle se rapporte à un dispositif photoémissif dans lequel un trou débouchant 4 est formé dans un substrat semi-conducteur 2. Une jonction pn est formée par diffusion d'impureté qui forme une région active 31. Une électrode 1 est disposée sur la région active et éventuellement sur une face du substrat 2, et une autre électrode est formée sur l'autre face. La lumière créée par la région active 31 est dirigée préférentiellement en direction perpendiculaire à la grande face du substrat 2. Application aux dispositifs d'affichage. (CF DESSIN DANS BOPI)
FR8618156A 1985-12-24 1986-12-24 Dispositif photoemissif a semi-conducteur de type directionnel Expired - Fee Related FR2592227B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60291536A JPS62150784A (ja) 1985-12-24 1985-12-24 発光素子
JP61004032A JPS62162372A (ja) 1986-01-10 1986-01-10 発光素子
JP61002891A JPS62162383A (ja) 1986-01-11 1986-01-11 半導体発光装置

Publications (2)

Publication Number Publication Date
FR2592227A1 true FR2592227A1 (fr) 1987-06-26
FR2592227B1 FR2592227B1 (fr) 1994-02-11

Family

ID=27275574

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8618156A Expired - Fee Related FR2592227B1 (fr) 1985-12-24 1986-12-24 Dispositif photoemissif a semi-conducteur de type directionnel

Country Status (6)

Country Link
US (1) US4797890A (fr)
CA (1) CA1271550C (fr)
DE (1) DE3644380C2 (fr)
FR (1) FR2592227B1 (fr)
GB (1) GB2186425B (fr)
NL (1) NL8603283A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410307A1 (fr) * 1989-07-20 1991-01-30 Canon Kabushiki Kaisha Dispositif électroluminescent et sa méthode de fabrication
EP0488510A2 (fr) * 1990-11-28 1992-06-03 Mitsubishi Denki Kabushiki Kaisha Dispositif laser à émission de surface dans le visible
EP0519226A2 (fr) * 1991-05-21 1992-12-23 Mitsubishi Denki Kabushiki Kaisha Appareil d'enregistrement électrophotographique du type à rangée de diodes électroluminescentes

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device
US4901327A (en) * 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
JPH06196813A (ja) * 1992-10-14 1994-07-15 Sony Corp 半導体レーザとその製法
JP3586293B2 (ja) * 1994-07-11 2004-11-10 ソニー株式会社 半導体発光素子
US6107736A (en) * 1997-06-02 2000-08-22 Motorola, Inc. Organic electroluminescent display device and method of fabrication
US6204189B1 (en) * 1999-01-29 2001-03-20 The Regents Of The University Of California Fabrication of precision high quality facets on molecular beam epitaxy material
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
DE10250635A1 (de) * 2002-10-30 2004-05-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterelement und Verfahren zu seiner Herstellung
US7531842B2 (en) * 2002-12-20 2009-05-12 Analog Devices, Inc. Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate
TWI275222B (en) * 2003-05-23 2007-03-01 Rohm & Haas Elect Mat External cavity semi-conductor laser and method for fabrication thereof
US20100149805A1 (en) * 2008-12-17 2010-06-17 Fridy Joseph Led lighting laminate with integrated cooling
CN104332554B (zh) * 2014-11-04 2017-08-04 浙江中博光电科技有限公司 Led晶粒与封装结构
JP7400282B2 (ja) * 2019-09-18 2023-12-19 株式会社リコー 面発光レーザ、面発光レーザ装置、光源装置及び検出装置

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JPS56157077A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Semiconductor light emitting device
JPS58184772A (ja) * 1982-04-23 1983-10-28 Toshiba Corp 半導体発光素子およびその製造方法

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DE1982065U (de) * 1968-01-02 1968-03-28 Novopan G M B H & Co Deutsche Vorrichtung zur aufstelung und verbindung von aufrechtstehenden wandteilen.
JPS5312288A (en) * 1976-07-21 1978-02-03 Hitachi Ltd Light emitting semiconductor device
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede
CA1139412A (fr) * 1980-09-10 1983-01-11 Northern Telecom Limited Diodes electroluminescentes a rendement quantique exterieur eleve
JPS5844779A (ja) * 1981-09-10 1983-03-15 Toshiba Corp 発光素子
US4577209A (en) * 1982-09-10 1986-03-18 At&T Bell Laboratories Photodiodes having a hole extending therethrough
JPH0750807B2 (ja) * 1984-03-28 1995-05-31 東北大学長 接合型半導体発光素子
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Publication number Priority date Publication date Assignee Title
JPS56157077A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Semiconductor light emitting device
JPS58184772A (ja) * 1982-04-23 1983-10-28 Toshiba Corp 半導体発光素子およびその製造方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
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PATENT ABSTRACTS OF JAPAN vol. 6, no. 37 (E-97)(915) 6 Mars 1982 & JP-A-56 157 077 ( FUJITSU K.K. ) 4 Décembre 1981 *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 21 (E-224)(1458) 28 Janvier 1984 & JP-A-58 184 772 ( TOKYO SHIBAURA DENKI K.K. ) 28 Octobre 1983 *
TENTH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION 3 Septembre 1984, STUTTGART pages 62 - 63; S.UCHIYAMA ET AL.: 'RAISING OPERATION TEMPERATURE OF GaInAsP/InP SURFACE EMITTING LASER' *
TENTH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION ECOC '84 3 Septembre 1984, STUTTGART pages 56 - 57; H.ITO ET AL.: 'NEW STRUCTURE OF LASER DIODE AND LIGHT EMITTING DIODE BASED ON COAXIAL TRANSVERSE JUNCTION (CTJ)' *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410307A1 (fr) * 1989-07-20 1991-01-30 Canon Kabushiki Kaisha Dispositif électroluminescent et sa méthode de fabrication
US5115284A (en) * 1989-07-20 1992-05-19 Canon Kabushiki Kaisha Light-emitting device
EP0488510A2 (fr) * 1990-11-28 1992-06-03 Mitsubishi Denki Kabushiki Kaisha Dispositif laser à émission de surface dans le visible
EP0488510A3 (en) * 1990-11-28 1992-07-01 Mitsubishi Denki Kabushiki Kaisha Visible light surface emitting laser device
US5166945A (en) * 1990-11-28 1992-11-24 Mitsubishi Denki Kabushiki Kaisha Visible light surface emitting laser device
EP0519226A2 (fr) * 1991-05-21 1992-12-23 Mitsubishi Denki Kabushiki Kaisha Appareil d'enregistrement électrophotographique du type à rangée de diodes électroluminescentes
EP0519226A3 (en) * 1991-05-21 1993-02-24 Mitsubishi Denki Kabushiki Kaisha Led array head type electrophotographic recording apparatus

Also Published As

Publication number Publication date
US4797890A (en) 1989-01-10
FR2592227B1 (fr) 1994-02-11
DE3644380C2 (de) 1993-11-04
CA1271550A (fr) 1990-07-10
GB2186425A (en) 1987-08-12
GB8630856D0 (en) 1987-02-04
CA1271550C (fr) 1990-07-10
DE3644380A1 (de) 1987-07-02
NL8603283A (nl) 1987-07-16
GB2186425B (en) 1989-10-18

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