KR930003448A - 화합물 반도체 장치 및 그 제조방법 - Google Patents

화합물 반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR930003448A
KR930003448A KR1019910012537A KR910012537A KR930003448A KR 930003448 A KR930003448 A KR 930003448A KR 1019910012537 A KR1019910012537 A KR 1019910012537A KR 910012537 A KR910012537 A KR 910012537A KR 930003448 A KR930003448 A KR 930003448A
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KR
South Korea
Prior art keywords
laser diode
semiconductor substrate
conductive type
light
photodiode
Prior art date
Application number
KR1019910012537A
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English (en)
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KR940008562B1 (ko
Inventor
문승환
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910012537A priority Critical patent/KR940008562B1/ko
Priority to US07/788,617 priority patent/US5291057A/en
Priority to JP29728091A priority patent/JPH0797693B2/ja
Priority to DE4137693A priority patent/DE4137693C2/de
Publication of KR930003448A publication Critical patent/KR930003448A/ko
Priority to US08/163,995 priority patent/US5374588A/en
Application granted granted Critical
Publication of KR940008562B1 publication Critical patent/KR940008562B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음.

Description

화합물 반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 화합물 반도체 장치의 평면도,
제3도는 제2도의 측면도이다.

Claims (6)

  1. 레이저다이오드와 이 레이저다이오드에서 방출되는 빛을 감지하여 외부회로를 통해 상기 빛의 세기를 조절하는 감지용 포토다이오드가 동일한 반도체기판에 구비된 화합물 반도체 장치에 있어서, 상기 감지용 포토다이오드는 레이저다이오드에서 방출되는 빛이 입사되는 면이 상기 반도체기판과 수직이고 상기 레이저 다이오드의 빛을 방출하는 면과 소정각도를 대향되도록 형성된 화합물 반도체 장치.
  2. 제1항에 있어서, 상기 소정각도는 π/2보다 작고 레이저 다이오드에서 방출된 빛이 감지용 포토다이오드에서 반사되어 레이저다이오드에 재입사되지 않을 최소각보다 크도록 이루어진 화합물 반도체 장치.
  3. 사각기둥형태의 레이저다이오드와, 상기 레이저다이오드에서 방출되는 빛이 입사되는 일측면이 반도체기판과 수직이고 이 일측면에서 반사되는 빛이 상기 레이저다이오드의 빛이 방출되는 면을 통해 재입사되지 않도록 소정각도로 대향되어 있으며 타측면도 상기 소정각도와 다른 각도를 가지는 삼각기둥형태의 감지용포토다이오드와, 상기 감지용포토다이오드와 대칭된 삼각기둥형태의 수신용포토다이오드가 동일한 반도체기관에 구비된 화합물 반도체 장치.
  4. 제1도전형의 반도체기판상에 제1도전형의 제2클래드층과 제1도전형 또는 제2도전형의 활성층과 제2도전형의 제2클래드층과 제2도전형의 캡층을 순차적으로 에피성장시키는 공정과, 상기 반도체 기판의 하부 및 캡층의 상부에 제1도전형전극과 제2도전형전극을 각각 형성하는 공정과, 상기 반도체기판의 소정깊이까지 한번의 이방성식각하여 사각기둥형태의 레이저다이오드와 서로 대칭하는 삼각기둥형태의 감지용 및 수신용 포토다이오드를 형성하는 화합물 반도체 장치의 제조방법.
  5. 제4항에 있어서, 상기 에피성장은 LPE, MBE 또는 MOCVD중 어느 하나의 방법을 이용하는 화합물 반도체장치 의 제조방법.
  6. 제4항에 있어서, 상기 이방성식각은 반응성이온식각인 화합물 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012537A 1991-07-20 1991-07-20 화합물 반도체 장치 및 그 제조방법 KR940008562B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910012537A KR940008562B1 (ko) 1991-07-20 1991-07-20 화합물 반도체 장치 및 그 제조방법
US07/788,617 US5291057A (en) 1991-07-20 1991-11-06 Rectangular shaped laser diode and symmetrically inverted triangular shaped emitting and receiving photodiodes on the same substrate
JP29728091A JPH0797693B2 (ja) 1991-07-20 1991-11-13 化合物半導体装置及びその製造方法
DE4137693A DE4137693C2 (de) 1991-07-20 1991-11-15 Verbund-Halbleitervorrichtung
US08/163,995 US5374588A (en) 1991-07-20 1993-12-07 Process for fabricating a compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910012537A KR940008562B1 (ko) 1991-07-20 1991-07-20 화합물 반도체 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR930003448A true KR930003448A (ko) 1993-02-24
KR940008562B1 KR940008562B1 (ko) 1994-09-24

Family

ID=19317640

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012537A KR940008562B1 (ko) 1991-07-20 1991-07-20 화합물 반도체 장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US5291057A (ko)
JP (1) JPH0797693B2 (ko)
KR (1) KR940008562B1 (ko)
DE (1) DE4137693C2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115162A (ko) 2021-02-10 2022-08-17 엘지전자 주식회사 공기청정장치

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
DE4411380A1 (de) * 1994-03-31 1995-10-05 Siemens Ag Sende- und Empfangsmodul für optoelektronischen Ping-Pong-Betrieb
EP0722207A1 (de) * 1995-01-13 1996-07-17 Siemens Aktiengesellschaft Integriert-optische Anordnung aus Halbleiterlaser und Monitordetektor
US5721750A (en) * 1995-04-13 1998-02-24 Korea Advanced Institute Of Science And Technology Laser diode for optoelectronic integrated circuit and a process for preparing the same
US5982358A (en) * 1997-09-17 1999-11-09 Micron Electronics, Inc. Method for providing buttons for use with multiple pointing devices on a laptop computer
US6107990A (en) * 1997-09-17 2000-08-22 Micron Electronics, Inc. Laptop with buttons configured for use with multiple pointing devices
JPH11163383A (ja) * 1997-11-25 1999-06-18 Oki Electric Ind Co Ltd 半導体受光素子
US7507595B2 (en) * 2004-12-30 2009-03-24 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same

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JPS5269592A (en) * 1975-12-08 1977-06-09 Toshiba Corp Semiconductor luminescent element
US4675518A (en) * 1982-03-05 1987-06-23 Omron Tateisi Electronics Co. Optical bistable device
FR2538171B1 (fr) * 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
JPS6139966U (ja) * 1984-08-16 1986-03-13 ソニー株式会社 半導体複合装置
JPS6195591A (ja) * 1984-10-16 1986-05-14 Sony Corp 半導体レ−ザ
JPH01266778A (ja) * 1988-04-18 1989-10-24 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
JPH0212885A (ja) * 1988-06-29 1990-01-17 Nec Corp 半導体レーザ及びその出射ビームの垂直放射角の制御方法
DE68909408T2 (de) * 1989-07-27 1994-04-21 Ibm Integrierte Halbleiterdiodenlaser und Photodiodenstruktur.
JPH0394481A (ja) * 1989-09-07 1991-04-19 Ricoh Co Ltd アレイ状半導体発光装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115162A (ko) 2021-02-10 2022-08-17 엘지전자 주식회사 공기청정장치

Also Published As

Publication number Publication date
US5374588A (en) 1994-12-20
DE4137693A1 (de) 1993-01-21
DE4137693C2 (de) 1995-07-06
JPH0797693B2 (ja) 1995-10-18
JPH0537093A (ja) 1993-02-12
KR940008562B1 (ko) 1994-09-24
US5291057A (en) 1994-03-01

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