GB1088790A - Multiple junction semiconductor device - Google Patents

Multiple junction semiconductor device

Info

Publication number
GB1088790A
GB1088790A GB3615066A GB3615066A GB1088790A GB 1088790 A GB1088790 A GB 1088790A GB 3615066 A GB3615066 A GB 3615066A GB 3615066 A GB3615066 A GB 3615066A GB 1088790 A GB1088790 A GB 1088790A
Authority
GB
United Kingdom
Prior art keywords
phosphide
arseno
type
silicon
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3615066A
Inventor
Christopher David Dobson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3615066A priority Critical patent/GB1088790A/en
Publication of GB1088790A publication Critical patent/GB1088790A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Abstract

<FORM:1088790/C4-C5/1> The light-emitting diodes 5a are connected in series by evaporated gold deposits 6, 7. The diodes are formed on the high resistivity gallium arsenide substrate 1 by coating its upper surface with an N-type gallium arseno-phosphide layer 2 and silica layer 3, by removing in selected areas the silicon and arseno phosphide down to substrate level, by indiffusing impurities to form P-type parts 4, 7, by treating the assembly to completely remove P-type material from the right-hand sides of the means and adjacent portions of the troughs, and by applying the gold deposits. Removal of silicon and gallium arseno-phosphide may be accomplished by air-abrasion or by etching. The P-type parts may be provided by epitaxial deposition other than by diffusion.
GB3615066A 1966-08-12 1966-08-12 Multiple junction semiconductor device Expired GB1088790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3615066A GB1088790A (en) 1966-08-12 1966-08-12 Multiple junction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3615066A GB1088790A (en) 1966-08-12 1966-08-12 Multiple junction semiconductor device

Publications (1)

Publication Number Publication Date
GB1088790A true GB1088790A (en) 1967-10-25

Family

ID=10385454

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3615066A Expired GB1088790A (en) 1966-08-12 1966-08-12 Multiple junction semiconductor device

Country Status (1)

Country Link
GB (1) GB1088790A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255755A (en) 1974-03-05 1981-03-10 Matsushita Electric Industrial Co., Ltd. Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer
GB2186425A (en) * 1985-12-24 1987-08-12 Fumio Inaba Semiconductor light emitting device with vertical light emission
EP1864338A1 (en) * 2005-02-04 2007-12-12 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255755A (en) 1974-03-05 1981-03-10 Matsushita Electric Industrial Co., Ltd. Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer
GB2186425A (en) * 1985-12-24 1987-08-12 Fumio Inaba Semiconductor light emitting device with vertical light emission
US4797890A (en) * 1985-12-24 1989-01-10 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting device with vertical light emission
GB2186425B (en) * 1985-12-24 1989-10-18 Fumio Inaba Semiconductor light emitting device with vertical light emission
EP1864338A1 (en) * 2005-02-04 2007-12-12 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
EP1864338A4 (en) * 2005-02-04 2010-01-20 Seoul Opto Device Co Ltd Light emitting device having a plurality of light emitting cells and method of fabricating the same
EP2259318A3 (en) * 2005-02-04 2014-01-08 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same

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