GB1111991A - Method of passivation of pn junction devices - Google Patents
Method of passivation of pn junction devicesInfo
- Publication number
- GB1111991A GB1111991A GB823665A GB823665A GB1111991A GB 1111991 A GB1111991 A GB 1111991A GB 823665 A GB823665 A GB 823665A GB 823665 A GB823665 A GB 823665A GB 1111991 A GB1111991 A GB 1111991A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- alloying
- feb
- semi
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
1,111,991. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. 24 Feb., 1966 [25 Feb., 1965], No. 8236/65. Heading H1K, A PN junction in an A m B v compound semiconductor body is protected by an epitaxial layer of semi-insulating material produced by diffusion into the body or vapour deposition on it. In a typical case the material is deposited on a transistor zone structure formed by oxide masking technique after removal of the oxide, contacts being made to the zones by alloying through the material. Alternatively a layer of intrinsic gallium arsenide is epitaxially deposited on a doped body of the same material and a buried PN junction formed by alloying through the intrinsic layer. The use of gallium phosphide to protect PN junctions in gallium phosphide is also suggested.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB823665A GB1111991A (en) | 1965-02-25 | 1965-02-25 | Method of passivation of pn junction devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB823665A GB1111991A (en) | 1965-02-25 | 1965-02-25 | Method of passivation of pn junction devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1111991A true GB1111991A (en) | 1968-05-01 |
Family
ID=9848589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB823665A Expired GB1111991A (en) | 1965-02-25 | 1965-02-25 | Method of passivation of pn junction devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1111991A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4207586A (en) * | 1976-12-31 | 1980-06-10 | U.S. Philips Corporation | Semiconductor device having a passivating layer |
GB2133928A (en) * | 1982-12-04 | 1984-08-01 | Plessey Co Plc | Coatings for semiconductor devices |
-
1965
- 1965-02-25 GB GB823665A patent/GB1111991A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4207586A (en) * | 1976-12-31 | 1980-06-10 | U.S. Philips Corporation | Semiconductor device having a passivating layer |
GB2133928A (en) * | 1982-12-04 | 1984-08-01 | Plessey Co Plc | Coatings for semiconductor devices |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1105177A (en) | Improvements in semiconductor devices | |
GB1229776A (en) | ||
GB923513A (en) | Improvements in semiconductor devices | |
GB908690A (en) | Semiconductor device | |
GB1012123A (en) | Improvements in or relating to semiconductor devices | |
GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
GB1080306A (en) | Semiconductor device fabrication | |
GB1312802A (en) | Field effect transistor | |
ES393035A1 (en) | Semiconductor devices having local oxide isolation | |
GB1109371A (en) | Metal-oxide-semiconductor field effect transistor | |
GB1152708A (en) | Improvements in or relating to Semiconductor Devices. | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
GB1186945A (en) | Improvements relating to Semiconductor Devices | |
GB1111991A (en) | Method of passivation of pn junction devices | |
GB1221882A (en) | Method of diffusing impurities into a limited region of a semiconductor body. | |
GB1076371A (en) | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction | |
GB1108774A (en) | Transistors | |
GB1165860A (en) | Semiconductor Device with a Large Area PN-Junction | |
GB1071357A (en) | Semiconductor switch | |
GB989205A (en) | Improvements in or relating to semi-conductor structures | |
GB1007936A (en) | Improvements in or relating to semiconductive devices | |
GB1335037A (en) | Field effect transistor | |
GB1079309A (en) | Semiconductor rectifiers | |
GB1074816A (en) | Improvements relating to semi-conductor devices |