FR2573248B1 - Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique - Google Patents
Procede de fabrication d'un transistor en film mince et transistor ainsi fabriqueInfo
- Publication number
- FR2573248B1 FR2573248B1 FR858516906A FR8516906A FR2573248B1 FR 2573248 B1 FR2573248 B1 FR 2573248B1 FR 858516906 A FR858516906 A FR 858516906A FR 8516906 A FR8516906 A FR 8516906A FR 2573248 B1 FR2573248 B1 FR 2573248B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- manufactured
- manufacturing
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59241239A JPH0824184B2 (ja) | 1984-11-15 | 1984-11-15 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2573248A1 FR2573248A1 (fr) | 1986-05-16 |
FR2573248B1 true FR2573248B1 (fr) | 1991-06-21 |
Family
ID=17071271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR858516906A Expired - Lifetime FR2573248B1 (fr) | 1984-11-15 | 1985-11-15 | Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0824184B2 (nl) |
KR (1) | KR930010978B1 (nl) |
CN (1) | CN85109088A (nl) |
DE (1) | DE3540452C2 (nl) |
FR (1) | FR2573248B1 (nl) |
GB (1) | GB2167899B (nl) |
NL (1) | NL194524C (nl) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242507A (en) * | 1989-04-05 | 1993-09-07 | Boston University | Impurity-induced seeding of polycrystalline semiconductors |
US5242858A (en) * | 1990-09-07 | 1993-09-07 | Canon Kabushiki Kaisha | Process for preparing semiconductor device by use of a flattening agent and diffusion |
JP3556679B2 (ja) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
US5403756A (en) * | 1991-11-20 | 1995-04-04 | Sharp Kabushiki Kaisha | Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor |
KR950003235B1 (ko) * | 1991-12-30 | 1995-04-06 | 주식회사 금성사 | 반도체 소자의 구조 |
JP3587537B2 (ja) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US5985741A (en) | 1993-02-15 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100612853B1 (ko) * | 2004-07-21 | 2006-08-14 | 삼성전자주식회사 | 와이어 형태의 실리사이드를 포함하는 Si 계열 물질층및 그 제조방법 |
CN104409635B (zh) | 2014-12-16 | 2017-02-22 | 京东方科技集团股份有限公司 | 一种有机薄膜晶体管及其制作方法、阵列基板、显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
JPS558026A (en) * | 1978-06-30 | 1980-01-21 | Matsushita Electric Ind Co Ltd | Semi-conductor device manufacturing method |
JPS5856409A (ja) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | 半導体装置の製造方法 |
JPS59165451A (ja) * | 1983-03-11 | 1984-09-18 | Toshiba Corp | 半導体装置の製造方法 |
JPS61191070A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 半導体装置の製造方法 |
-
1984
- 1984-11-15 JP JP59241239A patent/JPH0824184B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-16 KR KR1019850007608A patent/KR930010978B1/ko not_active IP Right Cessation
- 1985-11-11 GB GB08527737A patent/GB2167899B/en not_active Expired
- 1985-11-13 NL NL8503123A patent/NL194524C/nl not_active IP Right Cessation
- 1985-11-14 DE DE3540452A patent/DE3540452C2/de not_active Expired - Fee Related
- 1985-11-15 FR FR858516906A patent/FR2573248B1/fr not_active Expired - Lifetime
- 1985-11-15 CN CN198585109088A patent/CN85109088A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS61119079A (ja) | 1986-06-06 |
NL8503123A (nl) | 1986-06-02 |
CN85109088A (zh) | 1986-08-27 |
DE3540452A1 (de) | 1986-06-05 |
KR860004455A (ko) | 1986-06-23 |
GB2167899B (en) | 1988-04-27 |
FR2573248A1 (fr) | 1986-05-16 |
NL194524C (nl) | 2002-06-04 |
DE3540452C2 (de) | 1999-07-29 |
GB2167899A (en) | 1986-06-04 |
KR930010978B1 (ko) | 1993-11-18 |
GB8527737D0 (en) | 1985-12-18 |
JPH0824184B2 (ja) | 1996-03-06 |
NL194524B (nl) | 2002-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |