FR2573248B1 - Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique - Google Patents

Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique

Info

Publication number
FR2573248B1
FR2573248B1 FR858516906A FR8516906A FR2573248B1 FR 2573248 B1 FR2573248 B1 FR 2573248B1 FR 858516906 A FR858516906 A FR 858516906A FR 8516906 A FR8516906 A FR 8516906A FR 2573248 B1 FR2573248 B1 FR 2573248B1
Authority
FR
France
Prior art keywords
transistor
manufactured
manufacturing
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858516906A
Other languages
English (en)
French (fr)
Other versions
FR2573248A1 (fr
Inventor
Hisao Hayashi
Takashi Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2573248A1 publication Critical patent/FR2573248A1/fr
Application granted granted Critical
Publication of FR2573248B1 publication Critical patent/FR2573248B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
FR858516906A 1984-11-15 1985-11-15 Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique Expired - Lifetime FR2573248B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241239A JPH0824184B2 (ja) 1984-11-15 1984-11-15 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
FR2573248A1 FR2573248A1 (fr) 1986-05-16
FR2573248B1 true FR2573248B1 (fr) 1991-06-21

Family

ID=17071271

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858516906A Expired - Lifetime FR2573248B1 (fr) 1984-11-15 1985-11-15 Procede de fabrication d'un transistor en film mince et transistor ainsi fabrique

Country Status (7)

Country Link
JP (1) JPH0824184B2 (nl)
KR (1) KR930010978B1 (nl)
CN (1) CN85109088A (nl)
DE (1) DE3540452C2 (nl)
FR (1) FR2573248B1 (nl)
GB (1) GB2167899B (nl)
NL (1) NL194524C (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
US5403756A (en) * 1991-11-20 1995-04-04 Sharp Kabushiki Kaisha Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
KR950003235B1 (ko) * 1991-12-30 1995-04-06 주식회사 금성사 반도체 소자의 구조
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
CN104409635B (zh) 2014-12-16 2017-02-22 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制作方法、阵列基板、显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS59165451A (ja) * 1983-03-11 1984-09-18 Toshiba Corp 半導体装置の製造方法
JPS61191070A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61119079A (ja) 1986-06-06
NL8503123A (nl) 1986-06-02
CN85109088A (zh) 1986-08-27
DE3540452A1 (de) 1986-06-05
KR860004455A (ko) 1986-06-23
GB2167899B (en) 1988-04-27
FR2573248A1 (fr) 1986-05-16
NL194524C (nl) 2002-06-04
DE3540452C2 (de) 1999-07-29
GB2167899A (en) 1986-06-04
KR930010978B1 (ko) 1993-11-18
GB8527737D0 (en) 1985-12-18
JPH0824184B2 (ja) 1996-03-06
NL194524B (nl) 2002-02-01

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Legal Events

Date Code Title Description
ST Notification of lapse