FR2509931A1 - - Google Patents
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- Publication number
- FR2509931A1 FR2509931A1 FR8212498A FR8212498A FR2509931A1 FR 2509931 A1 FR2509931 A1 FR 2509931A1 FR 8212498 A FR8212498 A FR 8212498A FR 8212498 A FR8212498 A FR 8212498A FR 2509931 A1 FR2509931 A1 FR 2509931A1
- Authority
- FR
- France
- Prior art keywords
- oxide
- metal
- voltage
- transistor
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 230000000694 effects Effects 0.000 claims abstract description 24
- 230000010287 polarization Effects 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000004020 conductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 101710116852 Molybdenum cofactor sulfurase 1 Proteins 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 4
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000003471 mutagenic agent Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56111935A JPS5813030A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
JP56111932A JPS5813028A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
JP56111933A JPS5813029A (ja) | 1981-07-17 | 1981-07-17 | アナログスイツチ装置 |
JP56111931A JPS5813027A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
JP5348282A JPS58171126A (ja) | 1982-03-31 | 1982-03-31 | アナログスイッチ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2509931A1 true FR2509931A1 (en, 2012) | 1983-01-21 |
FR2509931B1 FR2509931B1 (en, 2012) | 1985-03-15 |
Family
ID=27523076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8212498A Expired FR2509931B1 (en, 2012) | 1981-07-17 | 1982-07-16 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4529897A (en, 2012) |
DE (1) | DE3226339C2 (en, 2012) |
FR (1) | FR2509931B1 (en, 2012) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0108603A3 (en) * | 1982-11-02 | 1986-02-05 | Fujitsu Limited | Field effect transistor gate circuit for switching analog signals |
EP0109642A3 (en) * | 1982-11-22 | 1986-11-12 | Kabushiki Kaisha Toshiba | Analog switch circuit |
FR2738424A1 (fr) * | 1995-09-05 | 1997-03-07 | Sgs Thomson Microelectronics | Interrupteur analogique basse tension |
EP2226937A2 (fr) | 2009-03-03 | 2010-09-08 | STMicroelectronics (Grenoble) SAS | Interrupteur analogique |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028310A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 電子ボリユ−ム |
JPS61117915A (ja) * | 1984-11-13 | 1986-06-05 | Fujitsu Ltd | 遅延回路 |
US4725813A (en) * | 1985-04-22 | 1988-02-16 | Nec Corporation | MOS type circuit device |
US4739196A (en) * | 1986-05-27 | 1988-04-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wide range linear inpedance controller using junction field effect transistors |
US5036223A (en) * | 1989-05-22 | 1991-07-30 | Kabushiki Kaisha Toshiba | Inverter circuit and chopper type comparator circuit using the same |
JPH04349708A (ja) * | 1990-09-11 | 1992-12-04 | Silicon Syst Inc | Mos抵抗回路 |
KR940006998B1 (ko) * | 1991-05-28 | 1994-08-03 | 삼성전자 주식회사 | 높은 출력 이득을 얻는 데이타 출력 드라이버 |
US5170075A (en) * | 1991-06-11 | 1992-12-08 | Texas Instruments Incorporated | Sample and hold circuitry and methods |
JPH057149A (ja) * | 1991-06-27 | 1993-01-14 | Fujitsu Ltd | 出力回路 |
JP3321188B2 (ja) * | 1991-07-26 | 2002-09-03 | 株式会社東芝 | 出力回路 |
US5172019A (en) * | 1992-01-17 | 1992-12-15 | Burr-Brown Corporation | Bootstrapped FET sampling switch |
JP2888722B2 (ja) * | 1993-04-12 | 1999-05-10 | 株式会社東芝 | インターフェース回路 |
GB2301720B (en) * | 1995-06-01 | 2000-05-24 | Motorola Inc | A MOS switching circuit |
US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
US5818099A (en) * | 1996-10-03 | 1998-10-06 | International Business Machines Corporation | MOS high frequency switch circuit using a variable well bias |
US6215348B1 (en) | 1997-10-01 | 2001-04-10 | Jesper Steensgaard-Madsen | Bootstrapped low-voltage switch |
US6154085A (en) * | 1998-09-08 | 2000-11-28 | Maxim Integrated Products, Inc. | Constant gate drive MOS analog switch |
JP3239867B2 (ja) * | 1998-12-17 | 2001-12-17 | 日本電気株式会社 | 半導体装置 |
JP3376977B2 (ja) * | 1999-10-27 | 2003-02-17 | 日本電気株式会社 | アナログスイッチ及びこれを用いたa/dコンバータ |
JP3942487B2 (ja) * | 2002-05-20 | 2007-07-11 | Necエレクトロニクス株式会社 | アナログスイッチ回路及び階調セレクタ回路 |
DE60309675T2 (de) * | 2003-05-30 | 2007-09-20 | Texas Instruments Inc., Dallas | Leistungsschaltkreis mit gesteuertem Sperrstrom |
JP4091576B2 (ja) * | 2004-03-24 | 2008-05-28 | 株式会社東芝 | 半導体集積回路及び周波数変調装置 |
US7724067B1 (en) * | 2006-05-03 | 2010-05-25 | Marvell International Ltd. | Enhanced transmission gate |
US7514983B2 (en) * | 2007-03-23 | 2009-04-07 | Fairchild Semiconductor Corporation | Over-voltage tolerant pass-gate |
KR100825227B1 (ko) * | 2007-10-04 | 2008-04-25 | 넥스트랩주식회사 | 팝 노이즈 제거 회로 |
WO2009153921A1 (ja) * | 2008-06-19 | 2009-12-23 | パナソニック株式会社 | アナログスイッチ |
US7760007B2 (en) * | 2008-12-11 | 2010-07-20 | Nuvoton Technology Corporation | Low voltage analog CMOS switch |
US20110148473A1 (en) * | 2009-12-22 | 2011-06-23 | Nxp B.V. | Switch-body pmos switch with switch-body dummies |
US20110298280A1 (en) | 2010-06-07 | 2011-12-08 | Skyworks Solutions, Inc | Apparatus and method for variable voltage distribution |
CN202696565U (zh) * | 2012-05-08 | 2013-01-23 | 成都芯源系统有限公司 | 模拟开关及模拟开关的控制电路 |
US9520880B2 (en) * | 2014-01-31 | 2016-12-13 | Texas Instruments Deutschland Gmbh | Configurable analog front ends for circuits with substantially gate enclosed inner electrode MOSFET switch |
JP6511867B2 (ja) | 2015-03-03 | 2019-05-15 | 株式会社デンソー | D/a変換回路 |
CN106160714B (zh) * | 2015-03-24 | 2019-03-26 | 帝奥微电子有限公司 | 耗尽型开关管电路 |
EP3142146A1 (en) * | 2015-09-09 | 2017-03-15 | Nokia Technologies Oy | Silicon-on-insultor chip with improved harmonics and linearity, and design method thereof |
JP7495712B2 (ja) * | 2020-02-27 | 2024-06-05 | 株式会社ノベルクリスタルテクノロジー | 電界効果トランジスタ及びその設計方法 |
TWI818350B (zh) * | 2021-03-18 | 2023-10-11 | 立錡科技股份有限公司 | 類比開關電路及其控制電路與控制方法 |
US11894094B1 (en) * | 2022-10-14 | 2024-02-06 | Nanya Technology Corporation | Electronic device and method of controlling the same |
US20240235547A9 (en) * | 2022-10-24 | 2024-07-11 | Murata Manufacturing Co., Ltd. | Power Transmission Gate Using Charge Pump |
CN116436448B (zh) * | 2023-03-14 | 2023-11-03 | 江苏润石科技有限公司 | 断电隔离电路及具有断电隔离电路的模拟开关 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3720848A (en) * | 1971-07-01 | 1973-03-13 | Motorola Inc | Solid-state relay |
US3866064A (en) * | 1973-08-22 | 1975-02-11 | Harris Intertype Corp | Cmos analog switch |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3457435A (en) * | 1965-12-21 | 1969-07-22 | Rca Corp | Complementary field-effect transistor transmission gate |
US4001606A (en) * | 1974-06-05 | 1977-01-04 | Andrew Gordon Francis Dingwall | Electrical circuit |
-
1982
- 1982-07-14 DE DE3226339A patent/DE3226339C2/de not_active Expired
- 1982-07-15 US US06/398,356 patent/US4529897A/en not_active Expired - Lifetime
- 1982-07-16 FR FR8212498A patent/FR2509931B1/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3720848A (en) * | 1971-07-01 | 1973-03-13 | Motorola Inc | Solid-state relay |
US3866064A (en) * | 1973-08-22 | 1975-02-11 | Harris Intertype Corp | Cmos analog switch |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0108603A3 (en) * | 1982-11-02 | 1986-02-05 | Fujitsu Limited | Field effect transistor gate circuit for switching analog signals |
EP0109642A3 (en) * | 1982-11-22 | 1986-11-12 | Kabushiki Kaisha Toshiba | Analog switch circuit |
FR2738424A1 (fr) * | 1995-09-05 | 1997-03-07 | Sgs Thomson Microelectronics | Interrupteur analogique basse tension |
EP2226937A2 (fr) | 2009-03-03 | 2010-09-08 | STMicroelectronics (Grenoble) SAS | Interrupteur analogique |
EP2226937A3 (fr) * | 2009-03-03 | 2010-12-22 | STMicroelectronics (Grenoble) SAS | Interrupteur analogique |
Also Published As
Publication number | Publication date |
---|---|
DE3226339C2 (de) | 1985-12-19 |
FR2509931B1 (en, 2012) | 1985-03-15 |
US4529897A (en) | 1985-07-16 |
DE3226339A1 (de) | 1983-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |