FR2478376A1 - Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication - Google Patents

Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication Download PDF

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Publication number
FR2478376A1
FR2478376A1 FR8104986A FR8104986A FR2478376A1 FR 2478376 A1 FR2478376 A1 FR 2478376A1 FR 8104986 A FR8104986 A FR 8104986A FR 8104986 A FR8104986 A FR 8104986A FR 2478376 A1 FR2478376 A1 FR 2478376A1
Authority
FR
France
Prior art keywords
region
type
semiconductor
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8104986A
Other languages
English (en)
French (fr)
Other versions
FR2478376B1 (enExample
Inventor
Kenji Maeguchi
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2478376A1 publication Critical patent/FR2478376A1/fr
Application granted granted Critical
Publication of FR2478376B1 publication Critical patent/FR2478376B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10P90/1912—
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
FR8104986A 1980-03-12 1981-03-12 Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication Granted FR2478376A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3129180A JPS56126936A (en) 1980-03-12 1980-03-12 Semiconductor device and production thereof

Publications (2)

Publication Number Publication Date
FR2478376A1 true FR2478376A1 (fr) 1981-09-18
FR2478376B1 FR2478376B1 (enExample) 1983-12-23

Family

ID=12327197

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8104986A Granted FR2478376A1 (fr) 1980-03-12 1981-03-12 Dispositif semi-conducteur du type cellule de memorisation a transistor a enrichissement et resistance, et son procede de fabrication

Country Status (4)

Country Link
US (1) US4447823A (enExample)
JP (1) JPS56126936A (enExample)
DE (1) DE3109074A1 (enExample)
FR (1) FR2478376A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582068A (ja) * 1981-06-26 1983-01-07 Toshiba Corp 半導体装置およびその製造方法
JPS5812365A (ja) * 1981-07-15 1983-01-24 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタ及びその製造方法
US4897698A (en) * 1984-10-31 1990-01-30 Texas Instruments Incorporated Horizontal structure thin film transistor
US4751554A (en) * 1985-09-27 1988-06-14 Rca Corporation Silicon-on-sapphire integrated circuit and method of making the same
US4758529A (en) * 1985-10-31 1988-07-19 Rca Corporation Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
US4735917A (en) * 1986-04-28 1988-04-05 General Electric Company Silicon-on-sapphire integrated circuits
US4722912A (en) * 1986-04-28 1988-02-02 Rca Corporation Method of forming a semiconductor structure
US4755481A (en) * 1986-05-15 1988-07-05 General Electric Company Method of making a silicon-on-insulator transistor
US4989061A (en) * 1986-09-05 1991-01-29 General Electric Company Radiation hard memory cell structure with drain shielding
US5019525A (en) * 1987-08-18 1991-05-28 Texas Instruments Incorporated Method for forming a horizontal self-aligned transistor
US5736777A (en) * 1995-12-29 1998-04-07 Intel Corporation Method and apparatus for fast self-destruction of a CMOS integrated circuit
JP3260660B2 (ja) * 1996-08-22 2002-02-25 株式会社東芝 半導体装置およびその製造方法
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
US6225666B1 (en) * 1999-10-29 2001-05-01 National Semiconductor Corporation Low stress active area silicon island structure with a non-rectangular cross-section profile and method for its formation
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767945A (en) * 1971-02-05 1973-10-23 Siemens Ag Circuit and construction of semiconductor storage elements
GB2005073A (en) * 1977-09-22 1979-04-11 Rca Corp Planar silicon-on-sapphire integrated circuits and method for producing such integrated circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101967A (en) * 1976-02-23 1977-08-26 Agency Of Ind Science & Technol Semiconductor device
US4087902A (en) * 1976-06-23 1978-05-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Field effect transistor and method of construction thereof
JPS5327278A (en) * 1976-08-27 1978-03-14 Hitachi Ltd Device for energizing electric discharge lamp
DE2643931A1 (de) * 1976-09-29 1978-03-30 Siemens Ag In integrierter technik hergestellter baustein
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads
JPS54130883A (en) * 1978-04-01 1979-10-11 Agency Of Ind Science & Technol Production of semiconductor device
US4320312A (en) * 1978-10-02 1982-03-16 Hewlett-Packard Company Smaller memory cells and logic circuits
JPS55160457A (en) * 1979-03-30 1980-12-13 Toshiba Corp Semiconductor device
US4253162A (en) * 1979-08-28 1981-02-24 Rca Corporation Blocked source node field-effect circuitry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767945A (en) * 1971-02-05 1973-10-23 Siemens Ag Circuit and construction of semiconductor storage elements
GB2005073A (en) * 1977-09-22 1979-04-11 Rca Corp Planar silicon-on-sapphire integrated circuits and method for producing such integrated circuits

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ERXBK/79 *
EXBK/73 *
EXBK/77 *

Also Published As

Publication number Publication date
US4447823A (en) 1984-05-08
FR2478376B1 (enExample) 1983-12-23
JPS56126936A (en) 1981-10-05
DE3109074C2 (enExample) 1989-04-06
DE3109074A1 (de) 1982-02-25

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