FR2446873A1 - Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue - Google Patents

Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue

Info

Publication number
FR2446873A1
FR2446873A1 FR7930855A FR7930855A FR2446873A1 FR 2446873 A1 FR2446873 A1 FR 2446873A1 FR 7930855 A FR7930855 A FR 7930855A FR 7930855 A FR7930855 A FR 7930855A FR 2446873 A1 FR2446873 A1 FR 2446873A1
Authority
FR
France
Prior art keywords
crucible
silicon crystals
molten material
vacuum silicon
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7930855A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Original Assignee
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRYSTAL SYSTEMS Inc, Crystal Systems Inc USA filed Critical CRYSTAL SYSTEMS Inc
Publication of FR2446873A1 publication Critical patent/FR2446873A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR7930855A 1979-01-18 1979-12-17 Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue Withdrawn FR2446873A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (1)

Publication Number Publication Date
FR2446873A1 true FR2446873A1 (fr) 1980-08-14

Family

ID=21710948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930855A Withdrawn FR2446873A1 (fr) 1979-01-18 1979-12-17 Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue

Country Status (7)

Country Link
JP (2) JPS55100294A (it)
BE (1) BE880839A (it)
DE (1) DE3001815A1 (it)
FR (1) FR2446873A1 (it)
GB (1) GB2041236A (it)
IT (1) IT1192791B (it)
NL (1) NL8000094A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE19831388A1 (de) * 1997-07-16 1999-01-21 Oliver Hugo Verfahren und Vorrichtung zur Herstellung von Werkstücken oder Blöcken aus schmelzbaren Materialien
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Also Published As

Publication number Publication date
IT1192791B (it) 1988-05-04
DE3001815A1 (de) 1980-07-31
NL8000094A (nl) 1980-07-22
IT7969384A0 (it) 1979-12-12
JPS55100294A (en) 1980-07-31
JPS569298A (en) 1981-01-30
GB2041236A (en) 1980-09-10
BE880839A (fr) 1980-04-16

Similar Documents

Publication Publication Date Title
Laudise et al. Hydrothermal growth of large sound crystals of zinc oxide
KR960031658A (ko) 단결정의 제조장치
EP0833395A3 (en) Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
AU2001248256A1 (en) Method and device for growing large-volume oriented monocrystals
FR2446873A1 (fr) Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue
FR2377887A1 (fr) Objet apte a la reprise thermique
FR2456581A1 (fr) Procede et appareil de formation de moulages metalliques a structure a grain fin
FR2439663A1 (fr) Dispositif et procede de traitement en continu a film fluide
BE903242A (fr) Procede d'encapsulage d'elements semi-conducteurs montes sur un ruban porteur
EP0738791A4 (en) METHOD FOR PRODUCING SPHERICAL CRYSTALS
BE899191A (fr) Procede de fabrication de particules monocristallines et leur utilisation dans les anodes de piles electrochimiques.
FR2608628B1 (fr) Procede d'extraction de metaux contenus dans des composes metalliques se trouvant dans des matieres pierreuses
FR2510986B1 (fr) Procede de cuisson d'ebauches et de fabrication de matiere refractaire liee par du nitrure de silicium
KR910016974A (ko) 결정 성장 방법 및 장치
FR2789058A1 (fr) Barquette de transport et d'acclimatation de poissons exotiques vivants ou de plantes aquatiques
MY105592A (en) Apparatus of manufacturing silicon single crystals.
EP0781871A3 (en) Heater mechanism for crystal pulling apparatus
FR2436200A1 (fr) Appareil et procede de polissage electrolytique
EP1033810A3 (en) A method of manufacturing a surface acoustic wave apparatus
GB1498925A (en) Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
KR920702735A (ko) 실리콘 단결정 제조장치
FR2546810B1 (fr) Procede et dispositif pour la fabrication de feuilles de matiere plastique de bonne qualite optique, par coulee
KR920701530A (ko) 실리콘 단결정의 제조장치
JPH0569174U (ja) 基板用ホルダー
Morehead The Direct Relation Between Segregation in Pulsed Laser Annealing and Equilibrium Crystal Growth

Legal Events

Date Code Title Description
ST Notification of lapse