IT7969384A0 - Procedimento ed apparecchio per laproduzione di cristalli di silicio mediante accrescimento - Google Patents

Procedimento ed apparecchio per laproduzione di cristalli di silicio mediante accrescimento

Info

Publication number
IT7969384A0
IT7969384A0 IT7969384A IT6938479A IT7969384A0 IT 7969384 A0 IT7969384 A0 IT 7969384A0 IT 7969384 A IT7969384 A IT 7969384A IT 6938479 A IT6938479 A IT 6938479A IT 7969384 A0 IT7969384 A0 IT 7969384A0
Authority
IT
Italy
Prior art keywords
growing
procedure
production
silicon crystals
crystals
Prior art date
Application number
IT7969384A
Other languages
English (en)
Other versions
IT1192791B (it
Inventor
Frederick Schmid
Chandra P Khattak
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of IT7969384A0 publication Critical patent/IT7969384A0/it
Application granted granted Critical
Publication of IT1192791B publication Critical patent/IT1192791B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
IT69384/79A 1979-01-18 1979-12-12 Procedimento ed apparecchio per la produzione di cristalli di silicio mediante accrescimento IT1192791B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (2)

Publication Number Publication Date
IT7969384A0 true IT7969384A0 (it) 1979-12-12
IT1192791B IT1192791B (it) 1988-05-04

Family

ID=21710948

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69384/79A IT1192791B (it) 1979-01-18 1979-12-12 Procedimento ed apparecchio per la produzione di cristalli di silicio mediante accrescimento

Country Status (7)

Country Link
JP (2) JPS55100294A (it)
BE (1) BE880839A (it)
DE (1) DE3001815A1 (it)
FR (1) FR2446873A1 (it)
GB (1) GB2041236A (it)
IT (1) IT1192791B (it)
NL (1) NL8000094A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE19831388A1 (de) * 1997-07-16 1999-01-21 Oliver Hugo Verfahren und Vorrichtung zur Herstellung von Werkstücken oder Blöcken aus schmelzbaren Materialien
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Also Published As

Publication number Publication date
IT1192791B (it) 1988-05-04
DE3001815A1 (de) 1980-07-31
NL8000094A (nl) 1980-07-22
JPS55100294A (en) 1980-07-31
JPS569298A (en) 1981-01-30
GB2041236A (en) 1980-09-10
FR2446873A1 (fr) 1980-08-14
BE880839A (fr) 1980-04-16

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