BE880839A - Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue - Google Patents

Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue

Info

Publication number
BE880839A
BE880839A BE0/198733A BE198733A BE880839A BE 880839 A BE880839 A BE 880839A BE 0/198733 A BE0/198733 A BE 0/198733A BE 198733 A BE198733 A BE 198733A BE 880839 A BE880839 A BE 880839A
Authority
BE
Belgium
Prior art keywords
molten material
silicon crystals
vacuum silicon
growing vacuum
growing
Prior art date
Application number
BE0/198733A
Other languages
English (en)
Inventor
C Khattak
F Schmid
Original Assignee
Crystal Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Syst filed Critical Crystal Syst
Publication of BE880839A publication Critical patent/BE880839A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
BE0/198733A 1979-01-18 1979-12-21 Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue BE880839A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (1)

Publication Number Publication Date
BE880839A true BE880839A (fr) 1980-04-16

Family

ID=21710948

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/198733A BE880839A (fr) 1979-01-18 1979-12-21 Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue

Country Status (7)

Country Link
JP (2) JPS55100294A (fr)
BE (1) BE880839A (fr)
DE (1) DE3001815A1 (fr)
FR (1) FR2446873A1 (fr)
GB (1) GB2041236A (fr)
IT (1) IT1192791B (fr)
NL (1) NL8000094A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
EP0996516B1 (fr) * 1997-07-16 2001-08-29 ALD Vacuum Technologies GmbH Procede et dispositif pour la fabrication de pieces ou de blocs en materiaux fusibles
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Also Published As

Publication number Publication date
IT1192791B (it) 1988-05-04
FR2446873A1 (fr) 1980-08-14
GB2041236A (en) 1980-09-10
IT7969384A0 (it) 1979-12-12
JPS569298A (en) 1981-01-30
NL8000094A (nl) 1980-07-22
JPS55100294A (en) 1980-07-31
DE3001815A1 (de) 1980-07-31

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