JPS569298A - Method of growing silicon crystal - Google Patents

Method of growing silicon crystal

Info

Publication number
JPS569298A
JPS569298A JP4669880A JP4669880A JPS569298A JP S569298 A JPS569298 A JP S569298A JP 4669880 A JP4669880 A JP 4669880A JP 4669880 A JP4669880 A JP 4669880A JP S569298 A JPS569298 A JP S569298A
Authority
JP
Japan
Prior art keywords
silicon crystal
growing silicon
growing
crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4669880A
Other languages
English (en)
Inventor
Shiyumitsuto Furederitsuku
Pii Kuhatsutatsuku Chiyandora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crystal Systems Corp
Original Assignee
Crystal Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Systems Corp filed Critical Crystal Systems Corp
Publication of JPS569298A publication Critical patent/JPS569298A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
JP4669880A 1979-01-18 1980-04-09 Method of growing silicon crystal Pending JPS569298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US446579A 1979-01-18 1979-01-18

Publications (1)

Publication Number Publication Date
JPS569298A true JPS569298A (en) 1981-01-30

Family

ID=21710948

Family Applications (2)

Application Number Title Priority Date Filing Date
JP16807179A Pending JPS55100294A (en) 1979-01-18 1979-12-24 Crystal growing device
JP4669880A Pending JPS569298A (en) 1979-01-18 1980-04-09 Method of growing silicon crystal

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP16807179A Pending JPS55100294A (en) 1979-01-18 1979-12-24 Crystal growing device

Country Status (7)

Country Link
JP (2) JPS55100294A (ja)
BE (1) BE880839A (ja)
DE (1) DE3001815A1 (ja)
FR (1) FR2446873A1 (ja)
GB (1) GB2041236A (ja)
IT (1) IT1192791B (ja)
NL (1) NL8000094A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
EP0996516B1 (de) * 1997-07-16 2001-08-29 ALD Vacuum Technologies GmbH Verfahren und vorrichtung zur herstellung von werkstücken oder blöcken aus schmelzbaren materialien
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces

Also Published As

Publication number Publication date
NL8000094A (nl) 1980-07-22
GB2041236A (en) 1980-09-10
FR2446873A1 (fr) 1980-08-14
DE3001815A1 (de) 1980-07-31
IT7969384A0 (it) 1979-12-12
IT1192791B (it) 1988-05-04
BE880839A (fr) 1980-04-16
JPS55100294A (en) 1980-07-31

Similar Documents

Publication Publication Date Title
JPS5350074A (en) Apparatus for growing silicon single crystal of webbform or sheettform
JPS5615082A (en) Method of manufacturing planar or banddlike silicon crystal
JPS533164A (en) Method of making single crystal silicon carbide
JPS5632319A (en) Method of refining silicon material
ZA757846B (en) Novel silicon crystals and method of producing same
DE2961312D1 (en) Process and device for the manufacture of polycrystalline silicon
JPS53122684A (en) Method of forming silicon crystal
JPS51144574A (en) Method of growing silicon crystal by pulling up
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
JPS5319922A (en) Producing method of crystalline silicon
JPS5573451A (en) Preparation of silicon crystal
GB2043482B (en) Crystal growth
JPS545378A (en) Method of processing silicon monocrystal
GB2041781B (en) Die-pulling of silicon
JPS569298A (en) Method of growing silicon crystal
JPS52104093A (en) Method of selectively growing microcrystalline silicon
JPS56114817A (en) Method of synthesizing zeolte zsmm5 of large crystal
GB2085884B (en) Crystals of b-nicotinamide-adenine-dinucleotide and process for preparing the same
JPS56654A (en) Method of crystallizing chromogen
DE3061769D1 (en) Improved process for growing crystal of ktiopo4 and analogues thereof
JPS53113780A (en) Method of manufacturing silicon monocrystal containing little impurities
JPS54157781A (en) Silicon single crystal manufacturing apparatus
JPS5265719A (en) Producing method of silicon single crystals
JPS57111299A (en) Method of growing silicon crystal body
JPS5354549A (en) Growing method of plant