FR2438914A1 - - Google Patents

Info

Publication number
FR2438914A1
FR2438914A1 FR7925411A FR7925411A FR2438914A1 FR 2438914 A1 FR2438914 A1 FR 2438914A1 FR 7925411 A FR7925411 A FR 7925411A FR 7925411 A FR7925411 A FR 7925411A FR 2438914 A1 FR2438914 A1 FR 2438914A1
Authority
FR
France
Prior art keywords
rules
substrate
tablet
produce
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7925411A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/951,064 external-priority patent/US4237601A/en
Priority claimed from US05/951,074 external-priority patent/US4236296A/en
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of FR2438914A1 publication Critical patent/FR2438914A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
FR7925411A 1978-10-13 1979-10-12 Pending FR2438914A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers
US05/951,074 US4236296A (en) 1978-10-13 1978-10-13 Etch method of cleaving semiconductor diode laser wafers

Publications (1)

Publication Number Publication Date
FR2438914A1 true FR2438914A1 (enrdf_load_stackoverflow) 1980-05-09

Family

ID=27130309

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7925411A Pending FR2438914A1 (enrdf_load_stackoverflow) 1978-10-13 1979-10-12

Country Status (8)

Country Link
CA (1) CA1140661A (enrdf_load_stackoverflow)
DE (1) DE2941476A1 (enrdf_load_stackoverflow)
FR (1) FR2438914A1 (enrdf_load_stackoverflow)
GB (1) GB2035684B (enrdf_load_stackoverflow)
IL (1) IL58443A0 (enrdf_load_stackoverflow)
IT (1) IT1123839B (enrdf_load_stackoverflow)
NL (1) NL7907625A (enrdf_load_stackoverflow)
SE (1) SE7908485L (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108475A3 (en) * 1982-09-10 1985-08-21 Western Electric Company, Incorporated Fabrication of cleaved semiconductor lasers
US4929300A (en) * 1988-08-05 1990-05-29 Siemens Aktiengesellschaft Process for the separation of monolithic LED chip arrangements generated on a semiconductor substrate wafer
EP0341034A3 (en) * 1988-05-06 1990-08-22 Sharp Kabushiki Kaisha A method for the production of semiconductor devices

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041478B2 (ja) * 1979-09-10 1985-09-17 富士通株式会社 半導体レ−ザ素子の製造方法
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
JPH07176827A (ja) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp 変調器付半導体レーザ装置の製造方法
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
DE102017012441B4 (de) * 2017-07-28 2025-08-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
DE102017117136B4 (de) * 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/77 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0108475A3 (en) * 1982-09-10 1985-08-21 Western Electric Company, Incorporated Fabrication of cleaved semiconductor lasers
EP0341034A3 (en) * 1988-05-06 1990-08-22 Sharp Kabushiki Kaisha A method for the production of semiconductor devices
US4929300A (en) * 1988-08-05 1990-05-29 Siemens Aktiengesellschaft Process for the separation of monolithic LED chip arrangements generated on a semiconductor substrate wafer

Also Published As

Publication number Publication date
IT7926486A0 (it) 1979-10-12
NL7907625A (nl) 1980-04-15
CA1140661A (en) 1983-02-01
IL58443A0 (en) 1980-01-31
GB2035684B (en) 1983-08-03
DE2941476A1 (de) 1980-04-24
IT1123839B (it) 1986-04-30
GB2035684A (en) 1980-06-18
SE7908485L (sv) 1980-04-14

Similar Documents

Publication Publication Date Title
FR2438914A1 (enrdf_load_stackoverflow)
KR920017309A (ko) 레이저 다이오드 어레이 및 그 제조방법
GB1223196A (en) Light-emitting diodes and method of making same
Chu et al. Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
JPS5493378A (en) Manufacture for semiconductor device
JPS55150288A (en) Semiconductor laser
JPS61163689A (ja) 半導体装置の製造方法
JPS5414174A (en) Manufacture for semiconductor device
JPS58207683A (ja) 半導体発光装置
JPS5263088A (en) Production of gaas light emitting diode
KR940000687B1 (ko) 발광다이오드 및 그 제조방법
JPS54152485A (en) Electrode forming method for gallium phosphide light- emitting diode
JPS5519886A (en) Apparatus and manufacturing method of semiconductor laser
JPS5469975A (en) Production of compound semiconductor light emitting elements
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS5558583A (en) Manufacture of compound semiconductor light emitting element
JPS57139986A (en) Manufacure of semiconductor laser
JPS5574195A (en) Manufacturing semiconductor laser
KR940001499A (ko) 반도체 레이저 다이오드의 제조방법 및 그 구조
JPS5642390A (en) Formation of electrode on semiconductor device
JPS5229183A (en) Method for production of semi-conductive element
JPS621284A (ja) 高速応答性可視発光ダイオ−ド
JPH07263809A (ja) 結晶製造方法
JPS5437098A (en) Method of producing gallium phosphide greenish luminous element
JPS5479579A (en) Manufacture of gap green light emission diode