DE2941476A1 - Verfahren zum spalten von halbleitermikroplaettchen in einzelstuecke - Google Patents

Verfahren zum spalten von halbleitermikroplaettchen in einzelstuecke

Info

Publication number
DE2941476A1
DE2941476A1 DE19792941476 DE2941476A DE2941476A1 DE 2941476 A1 DE2941476 A1 DE 2941476A1 DE 19792941476 DE19792941476 DE 19792941476 DE 2941476 A DE2941476 A DE 2941476A DE 2941476 A1 DE2941476 A1 DE 2941476A1
Authority
DE
Germany
Prior art keywords
substrate
etching
shaped grooves
microplate
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792941476
Other languages
German (de)
English (en)
Inventor
Stephen J Anderson
David W Collins
Harold A Huggins
Frederick W Scholl
Geoffrey R Woolhouse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/951,064 external-priority patent/US4237601A/en
Priority claimed from US05/951,074 external-priority patent/US4236296A/en
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of DE2941476A1 publication Critical patent/DE2941476A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE19792941476 1978-10-13 1979-10-12 Verfahren zum spalten von halbleitermikroplaettchen in einzelstuecke Withdrawn DE2941476A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/951,064 US4237601A (en) 1978-10-13 1978-10-13 Method of cleaving semiconductor diode laser wafers
US05/951,074 US4236296A (en) 1978-10-13 1978-10-13 Etch method of cleaving semiconductor diode laser wafers

Publications (1)

Publication Number Publication Date
DE2941476A1 true DE2941476A1 (de) 1980-04-24

Family

ID=27130309

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792941476 Withdrawn DE2941476A1 (de) 1978-10-13 1979-10-12 Verfahren zum spalten von halbleitermikroplaettchen in einzelstuecke

Country Status (8)

Country Link
CA (1) CA1140661A (enrdf_load_stackoverflow)
DE (1) DE2941476A1 (enrdf_load_stackoverflow)
FR (1) FR2438914A1 (enrdf_load_stackoverflow)
GB (1) GB2035684B (enrdf_load_stackoverflow)
IL (1) IL58443A0 (enrdf_load_stackoverflow)
IT (1) IT1123839B (enrdf_load_stackoverflow)
NL (1) NL7907625A (enrdf_load_stackoverflow)
SE (1) SE7908485L (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
DE4429772A1 (de) * 1993-08-20 1995-02-23 Mitsubishi Electric Corp Verfahren zum Herstellen einer integrierten Modulator-Halbleiterlaservorrichtung
DE102017117136A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
DE102017012441B4 (de) * 2017-07-28 2025-08-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041478B2 (ja) * 1979-09-10 1985-09-17 富士通株式会社 半導体レ−ザ素子の製造方法
CA1201520A (en) * 1982-09-10 1986-03-04 Charles A. Burrus, Jr. Fabrication of cleaved semiconductor lasers
JPH01280388A (ja) * 1988-05-06 1989-11-10 Sharp Corp 半導体素子の製造方法
DE3826736A1 (de) * 1988-08-05 1990-02-08 Siemens Ag Verfahren zum trennen von monolithisch auf einer halbleitersubstratscheibe erzeugten led-chip-anordnungen
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471923A (en) * 1966-12-09 1969-10-14 Rca Corp Method of making diode arrays

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
DE4429772A1 (de) * 1993-08-20 1995-02-23 Mitsubishi Electric Corp Verfahren zum Herstellen einer integrierten Modulator-Halbleiterlaservorrichtung
DE102017117136A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
DE102017117136B4 (de) 2017-07-28 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
US11688993B2 (en) 2017-07-28 2023-06-27 Osram Opto Semiconductors Gmbh Method of producing a plurality of laser diodes and laser diode
DE102017012441B4 (de) * 2017-07-28 2025-08-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode

Also Published As

Publication number Publication date
GB2035684B (en) 1983-08-03
CA1140661A (en) 1983-02-01
SE7908485L (sv) 1980-04-14
GB2035684A (en) 1980-06-18
IT7926486A0 (it) 1979-10-12
IL58443A0 (en) 1980-01-31
IT1123839B (it) 1986-04-30
NL7907625A (nl) 1980-04-15
FR2438914A1 (enrdf_load_stackoverflow) 1980-05-09

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee