FR2438344A1 - Dispositif photosensible a spectres multiples, notamment pour la lecture optique de caracteres - Google Patents

Dispositif photosensible a spectres multiples, notamment pour la lecture optique de caracteres

Info

Publication number
FR2438344A1
FR2438344A1 FR7924822A FR7924822A FR2438344A1 FR 2438344 A1 FR2438344 A1 FR 2438344A1 FR 7924822 A FR7924822 A FR 7924822A FR 7924822 A FR7924822 A FR 7924822A FR 2438344 A1 FR2438344 A1 FR 2438344A1
Authority
FR
France
Prior art keywords
photosensitive device
multiple spectrum
optical character
character reading
photodiod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7924822A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Recognition Equipment Inc
Original Assignee
Recognition Equipment Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Recognition Equipment Inc filed Critical Recognition Equipment Inc
Publication of FR2438344A1 publication Critical patent/FR2438344A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

L'INVENTION CONCERNE UN DISPOSITIF PHOTOSENSIBLE A SPECTRES MULTIPLES. IL COMPORTE AU MOINS UNE PHOTODIODE FORMEE SOUS LA SURFACE D'UN SUBSTRAT SEMI-CONDUCTEUR, AU-DESSOUS D'UNE PHOTODIODE SUPERFICIELLE, DE MANIERE A FORMER PLUSIEURS PHOTODIODES DONT LES REPONSES SPECTRALES SONT DIFFERENTES. LA PHOTODIODE SUPERFICIELLE EST SENSIBLE A LA LUMIERE VISIBLE ET LA PHOTODIODE QUI SE TROUVE AU-DESSOUS EST SENSIBLE A UN RAYONNEMENT DE PLUS GRANDE LONGUEUR D'ONDE, SELON LA PROFONDEUR A LAQUELLE ELLE SE TROUVE SOUS LA SURFACE. UNE MATRICE BIDIMENSIONNELLE DE CES PHOTODIODES PEUT ETRE REALISEE DANS UN SEUL SUBSTRAT SEMI-CONDUCTEUR. L'INVENTION S'APPLIQUE NOTAMMENT A DES MATRICES DE LECTURE OPTIQUE DES CARACTERES.
FR7924822A 1978-10-06 1979-10-05 Dispositif photosensible a spectres multiples, notamment pour la lecture optique de caracteres Withdrawn FR2438344A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/949,346 US4238760A (en) 1978-10-06 1978-10-06 Multi-spectrum photodiode devices

Publications (1)

Publication Number Publication Date
FR2438344A1 true FR2438344A1 (fr) 1980-04-30

Family

ID=25488951

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7924822A Withdrawn FR2438344A1 (fr) 1978-10-06 1979-10-05 Dispositif photosensible a spectres multiples, notamment pour la lecture optique de caracteres

Country Status (7)

Country Link
US (1) US4238760A (fr)
JP (1) JPS5552277A (fr)
CA (1) CA1138081A (fr)
DE (1) DE2940343A1 (fr)
FR (1) FR2438344A1 (fr)
GB (1) GB2034971A (fr)
NL (1) NL7907416A (fr)

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US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US4466691A (en) * 1981-10-05 1984-08-21 Merlin Gerin Connecting terminal for circuit interrupter

Also Published As

Publication number Publication date
GB2034971A (en) 1980-06-11
NL7907416A (nl) 1980-04-09
US4238760A (en) 1980-12-09
CA1138081A (fr) 1982-12-21
JPS5552277A (en) 1980-04-16
DE2940343A1 (de) 1980-04-10

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