FR2969390B1 - Dispositif d'imagerie avec filtrage du rayonnement infrarouge. - Google Patents

Dispositif d'imagerie avec filtrage du rayonnement infrarouge.

Info

Publication number
FR2969390B1
FR2969390B1 FR1060561A FR1060561A FR2969390B1 FR 2969390 B1 FR2969390 B1 FR 2969390B1 FR 1060561 A FR1060561 A FR 1060561A FR 1060561 A FR1060561 A FR 1060561A FR 2969390 B1 FR2969390 B1 FR 2969390B1
Authority
FR
France
Prior art keywords
imaging device
infrared radiation
radiation filtration
filtration
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1060561A
Other languages
English (en)
Other versions
FR2969390A1 (fr
Inventor
David Coulon
Benoit Deschamps
Frederic Barbier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Rousset SAS
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Rousset SAS
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Rousset SAS, STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics SA
Priority to FR1060561A priority Critical patent/FR2969390B1/fr
Priority to US13/316,938 priority patent/US8901692B2/en
Publication of FR2969390A1 publication Critical patent/FR2969390A1/fr
Application granted granted Critical
Publication of FR2969390B1 publication Critical patent/FR2969390B1/fr
Priority to US14/557,158 priority patent/US9998689B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FR1060561A 2010-12-15 2010-12-15 Dispositif d'imagerie avec filtrage du rayonnement infrarouge. Expired - Fee Related FR2969390B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1060561A FR2969390B1 (fr) 2010-12-15 2010-12-15 Dispositif d'imagerie avec filtrage du rayonnement infrarouge.
US13/316,938 US8901692B2 (en) 2010-12-15 2011-12-12 Imaging device with filtering of the infrared radiation
US14/557,158 US9998689B2 (en) 2010-12-15 2014-12-01 Imaging device with filtering of the infrared radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060561A FR2969390B1 (fr) 2010-12-15 2010-12-15 Dispositif d'imagerie avec filtrage du rayonnement infrarouge.

Publications (2)

Publication Number Publication Date
FR2969390A1 FR2969390A1 (fr) 2012-06-22
FR2969390B1 true FR2969390B1 (fr) 2014-09-26

Family

ID=43903920

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060561A Expired - Fee Related FR2969390B1 (fr) 2010-12-15 2010-12-15 Dispositif d'imagerie avec filtrage du rayonnement infrarouge.

Country Status (2)

Country Link
US (2) US8901692B2 (fr)
FR (1) FR2969390B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2984607A1 (fr) * 2011-12-16 2013-06-21 St Microelectronics Crolles 2 Capteur d'image a photodiode durcie
CN112770020A (zh) * 2019-11-05 2021-05-07 北京小米移动软件有限公司 图像传感模组、方法、装置、电子设备及介质

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
US5162887A (en) * 1988-10-31 1992-11-10 Texas Instruments Incorporated Buried junction photodiode
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP2003298038A (ja) * 2002-04-05 2003-10-17 Canon Inc 光電変換素子及びそれを用いた固体撮像装置
JP4154165B2 (ja) * 2002-04-05 2008-09-24 キヤノン株式会社 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置
JP2003303949A (ja) * 2002-04-11 2003-10-24 Canon Inc 撮像装置
US7154157B2 (en) * 2002-12-30 2006-12-26 Intel Corporation Stacked semiconductor radiation sensors having color component and infrared sensing capability
US6894265B2 (en) * 2003-01-31 2005-05-17 Foveon, Inc. Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same
US7554587B2 (en) * 2003-03-11 2009-06-30 Fujifilm Corporation Color solid-state image pickup device
WO2005119785A1 (fr) * 2004-05-27 2005-12-15 Foveon, Inc. Groupe vertical de sondes a filtres de couleurs et procede de fabrication de circuits integres a semi-conducteurs pour fabriquer un tel groupe
EP2180513A1 (fr) * 2008-10-27 2010-04-28 Stmicroelectronics SA Capteur d'image de couleur/proche infrarouge
JP5522932B2 (ja) * 2008-12-25 2014-06-18 キヤノン株式会社 光電変換装置及び光電変換装置の駆動方法

Also Published As

Publication number Publication date
US8901692B2 (en) 2014-12-02
FR2969390A1 (fr) 2012-06-22
US9998689B2 (en) 2018-06-12
US20150083894A1 (en) 2015-03-26
US20120153422A1 (en) 2012-06-21

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Effective date: 20180831