FR2419923A1 - Corps fritte en materiau ceramique semi-conducteur a base de titanate de strontium dope a l'aide de niobium ou de tantale presentant des couches electro-isolantes appliquees aux limites des grains - Google Patents
Corps fritte en materiau ceramique semi-conducteur a base de titanate de strontium dope a l'aide de niobium ou de tantale presentant des couches electro-isolantes appliquees aux limites des grainsInfo
- Publication number
- FR2419923A1 FR2419923A1 FR7906283A FR7906283A FR2419923A1 FR 2419923 A1 FR2419923 A1 FR 2419923A1 FR 7906283 A FR7906283 A FR 7906283A FR 7906283 A FR7906283 A FR 7906283A FR 2419923 A1 FR2419923 A1 FR 2419923A1
- Authority
- FR
- France
- Prior art keywords
- grains
- niobium
- tantalum
- strontium titanate
- fritted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title abstract 2
- 229910010293 ceramic material Inorganic materials 0.000 title 1
- 229910052758 niobium Inorganic materials 0.000 title 1
- 239000010955 niobium Substances 0.000 title 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title 1
- 229910052715 tantalum Inorganic materials 0.000 title 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910018404 Al2 O3 Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910000484 niobium oxide Inorganic materials 0.000 abstract 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Corps en titanate de strontium semi-conducteur dopé à l'aide d'oxyde de niobium ou d'oxyde de tantale et de 0,1 à 2 % en poids de SiO2 et éventuellement, 0,1 à 2 % en poids de Al2 O3 . Après diffusion d'un mélange d'oxydes métalliques constituant une couche isolante aux limites des grains et l'application d'électrodes on obtient un condensateur à couche d'arrêt.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7802690A NL7802690A (nl) | 1978-03-13 | 1978-03-13 | Sinterlichaam uit halfgeleidend keramisch ma- teriaal op basis van met nioob of tantaal ge- doteerd strontium-titanaat, met elektrisch isolerende lagen op de korrelgrenzen. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2419923A1 true FR2419923A1 (fr) | 1979-10-12 |
FR2419923B1 FR2419923B1 (fr) | 1986-05-09 |
Family
ID=19830480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7906283A Expired FR2419923B1 (fr) | 1978-03-13 | 1979-03-12 | Corps fritte en materiau ceramique semi-conducteur a base de titanate de strontium dope a l'aide de niobium ou de tantale presentant des couches electro-isolantes appliquees aux limites des grains |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPS54129398A (fr) |
DE (1) | DE2909098C3 (fr) |
FR (1) | FR2419923B1 (fr) |
GB (1) | GB2015977B (fr) |
NL (1) | NL7802690A (fr) |
SE (1) | SE432097B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5651820A (en) * | 1979-10-04 | 1981-05-09 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
US4309295A (en) * | 1980-02-08 | 1982-01-05 | U.S. Philips Corporation | Grain boundary barrier layer ceramic dielectrics and the method of manufacturing capacitors therefrom |
JPS56144522A (en) * | 1980-04-11 | 1981-11-10 | Matsushita Electric Ind Co Ltd | Grain boundary dielectric layer type semiconductor porcelain composition |
JPS56162820A (en) * | 1980-05-20 | 1981-12-15 | Kiyoshi Okazaki | Vapor bank layered laminated ceramic capacitor and method of manufacturing same |
US4347167A (en) * | 1980-10-01 | 1982-08-31 | University Of Illinois Foundation | Fine-grain semiconducting ceramic compositions |
US4367265A (en) * | 1981-04-06 | 1983-01-04 | North American Philips Corporation | Intergranular insulation type semiconductive ceramic and method of producing same |
EP0076456B1 (fr) * | 1981-10-01 | 1986-12-17 | Taiyo Yuden Co., Ltd. | Matériaux céramiques diélectriques présentant des couches isolantes aux limites des grains cristallins et procédé pour leur préparation |
JPS5891602A (ja) * | 1981-11-26 | 1983-05-31 | 太陽誘電株式会社 | 電圧非直線磁器組成物 |
JPS5935402A (ja) * | 1982-08-24 | 1984-02-27 | 太陽誘電株式会社 | 電圧依存非直線抵抗特性を有する半導体磁器物質 |
DE3723051A1 (de) * | 1987-07-11 | 1989-01-19 | Kernforschungsz Karlsruhe | Halbleiter fuer einen resistiven gassensor mit hoher ansprechgeschwindigkeit |
DE4225920A1 (de) * | 1992-08-05 | 1994-02-10 | Roederstein Kondensatoren | Kondensator, insbesondere Elektrolytkondensator |
JP2000161354A (ja) | 1998-11-25 | 2000-06-13 | Nsk Ltd | リニアガイド装置 |
CN111908914B (zh) * | 2020-07-16 | 2021-06-18 | 广州天极电子科技股份有限公司 | 一种晶界层陶瓷材料、晶界层陶瓷基片的制备方法及其应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2433661A1 (de) * | 1973-07-16 | 1975-02-06 | Sony Corp | Halbleiterkeramik mit zwischenkornisolation |
JPS5210596A (en) * | 1975-07-16 | 1977-01-26 | Sony Corp | Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5210597U (fr) * | 1975-07-08 | 1977-01-25 | ||
JPS5210597A (en) * | 1975-07-16 | 1977-01-26 | Sony Corp | Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor |
JPS6029211B2 (ja) * | 1975-09-10 | 1985-07-09 | 松下電器産業株式会社 | 半導体磁器コンデンサの製造方法 |
-
1978
- 1978-03-13 NL NL7802690A patent/NL7802690A/xx not_active Application Discontinuation
-
1979
- 1979-03-08 DE DE19792909098 patent/DE2909098C3/de not_active Expired
- 1979-03-09 GB GB7908350A patent/GB2015977B/en not_active Expired
- 1979-03-09 SE SE7902124A patent/SE432097B/sv not_active IP Right Cessation
- 1979-03-10 JP JP2817379A patent/JPS54129398A/ja active Pending
- 1979-03-12 FR FR7906283A patent/FR2419923B1/fr not_active Expired
-
1986
- 1986-07-21 JP JP61171472A patent/JPS6211215A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2433661A1 (de) * | 1973-07-16 | 1975-02-06 | Sony Corp | Halbleiterkeramik mit zwischenkornisolation |
JPS5210596A (en) * | 1975-07-16 | 1977-01-26 | Sony Corp | Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor |
Non-Patent Citations (3)
Title |
---|
CHEMICAL ABSTRACTS, vol. 86, no. 20, 1977, page 666, no. 149600d, Columbus Ohio (USA); & JP - A - 77 010 596 (SONY CORP.) (26-01-1977) * |
REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES, vol. 19, nos. 5-6, mai-juin 1971, pages 665-679, Tokyo (JP); * |
REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES, vol. 20, nos. 7-8, juillet-août 1972, pages 747-763, Tokyo (JP); * |
Also Published As
Publication number | Publication date |
---|---|
JPS54129398A (en) | 1979-10-06 |
DE2909098C3 (de) | 1981-02-19 |
GB2015977B (en) | 1982-06-23 |
DE2909098A1 (de) | 1979-09-20 |
FR2419923B1 (fr) | 1986-05-09 |
GB2015977A (en) | 1979-09-19 |
SE432097B (sv) | 1984-03-19 |
JPS6211215A (ja) | 1987-01-20 |
DE2909098B2 (de) | 1980-06-12 |
SE7902124L (sv) | 1979-09-14 |
NL7802690A (nl) | 1979-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |