FR2404892A1 - Elements de memoire a semiconducteurs et procede pour sa fabrication - Google Patents

Elements de memoire a semiconducteurs et procede pour sa fabrication

Info

Publication number
FR2404892A1
FR2404892A1 FR7827371A FR7827371A FR2404892A1 FR 2404892 A1 FR2404892 A1 FR 2404892A1 FR 7827371 A FR7827371 A FR 7827371A FR 7827371 A FR7827371 A FR 7827371A FR 2404892 A1 FR2404892 A1 FR 2404892A1
Authority
FR
France
Prior art keywords
semiconductor memory
manufacturing
memory elements
conductor
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7827371A
Other languages
English (en)
French (fr)
Other versions
FR2404892B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2404892A1 publication Critical patent/FR2404892A1/fr
Application granted granted Critical
Publication of FR2404892B1 publication Critical patent/FR2404892B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/92—Conductor layers on different levels connected in parallel, e.g. to reduce resistance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
FR7827371A 1977-09-28 1978-09-25 Elements de memoire a semiconducteurs et procede pour sa fabrication Granted FR2404892A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743619 DE2743619A1 (de) 1977-09-28 1977-09-28 Halbleiter-speicherelement und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
FR2404892A1 true FR2404892A1 (fr) 1979-04-27
FR2404892B1 FR2404892B1 (OSRAM) 1984-01-13

Family

ID=6020124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7827371A Granted FR2404892A1 (fr) 1977-09-28 1978-09-25 Elements de memoire a semiconducteurs et procede pour sa fabrication

Country Status (5)

Country Link
US (1) US4206471A (OSRAM)
JP (1) JPS5458385A (OSRAM)
DE (1) DE2743619A1 (OSRAM)
FR (1) FR2404892A1 (OSRAM)
GB (1) GB2005077B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597805A (en) * 1979-10-11 1986-07-01 Texas Instruments Incorporated Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM
US4319342A (en) * 1979-12-26 1982-03-09 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
USRE32236E (en) * 1979-12-26 1986-08-26 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
JPS6054471A (ja) * 1983-09-05 1985-03-28 Hitachi Ltd 半導体メモリ
JPS61127161A (ja) * 1984-11-26 1986-06-14 Fujitsu Ltd 半導体記憶装置
KR920007358B1 (ko) * 1990-03-28 1992-08-31 금성일렉트론 주식회사 고집적 메모리 셀 및 코아 어레이 구조
KR100721304B1 (ko) * 2000-12-29 2007-05-25 엘지.필립스 엘시디 주식회사 액정표시장치용 액정패널 및 그의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997799A (en) * 1975-09-15 1976-12-14 Baker Roger T Semiconductor-device for the storage of binary data
US4150389A (en) * 1976-09-29 1979-04-17 Siemens Aktiengesellschaft N-channel memory field effect transistor
US4139786A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static MOS memory cell using inverted N-channel field-effect transistor

Also Published As

Publication number Publication date
GB2005077B (en) 1982-03-31
DE2743619A1 (de) 1979-03-29
JPS6244428B2 (OSRAM) 1987-09-21
JPS5458385A (en) 1979-05-11
US4206471A (en) 1980-06-03
GB2005077A (en) 1979-04-11
FR2404892B1 (OSRAM) 1984-01-13

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Legal Events

Date Code Title Description
ST Notification of lapse