FR2404893A1 - Cellule de memoire remanente a percage - Google Patents
Cellule de memoire remanente a percageInfo
- Publication number
- FR2404893A1 FR2404893A1 FR7827688A FR7827688A FR2404893A1 FR 2404893 A1 FR2404893 A1 FR 2404893A1 FR 7827688 A FR7827688 A FR 7827688A FR 7827688 A FR7827688 A FR 7827688A FR 2404893 A1 FR2404893 A1 FR 2404893A1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- drilling
- substrate
- type
- buried layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005553 drilling Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
La présente invention concerne une cellule de mémoire rémanente à perçage. Cette cellule de mémoire comprend un substrat 1 de type p, des zones de diffusion de type n**+ 4 et 5 séparées, et, sur la surface 3 du substrat, des couches successives de SiO2 6, Si3 N 4 7 et de porte 8. Une couche enterrée 2 de type n**+ est comprise dans le substrat en regard de la couche de porte. Ainsi, des électrons peuvent être injectés à l'interface des couches 6 et 7 à partir de la couche enterrée. Application à la fabrication de réseaux de mémoire de faible coût.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/838,437 US4163985A (en) | 1977-09-30 | 1977-09-30 | Nonvolatile punch through memory cell with buried n+ region in channel |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2404893A1 true FR2404893A1 (fr) | 1979-04-27 |
Family
ID=25277084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7827688A Withdrawn FR2404893A1 (fr) | 1977-09-30 | 1978-09-27 | Cellule de memoire remanente a percage |
Country Status (5)
Country | Link |
---|---|
US (1) | US4163985A (fr) |
DE (1) | DE2842122A1 (fr) |
FR (1) | FR2404893A1 (fr) |
GB (1) | GB2005914B (fr) |
NL (1) | NL7809899A (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4471368A (en) * | 1977-10-13 | 1984-09-11 | Mohsen Amr M | Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor |
NL7801532A (nl) * | 1978-02-10 | 1979-08-14 | Philips Nv | Halfgeleiderinrichting. |
JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
US4305083A (en) * | 1978-09-19 | 1981-12-08 | Texas Instruments Incorporated | Single junction charge injector floating gate memory cell |
JPS607389B2 (ja) * | 1978-12-26 | 1985-02-23 | 超エル・エス・アイ技術研究組合 | 半導体装置の製造方法 |
JPS5656677A (en) * | 1979-10-13 | 1981-05-18 | Toshiba Corp | Semiconductor memory device |
US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
JPS59161873A (ja) * | 1983-03-07 | 1984-09-12 | Agency Of Ind Science & Technol | 半導体不揮発性メモリ |
GB8907262D0 (en) * | 1989-03-31 | 1989-05-17 | Philips Nv | Electrically-programmable semiconductor memories |
US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
DE69019872T2 (de) * | 1989-03-31 | 1996-02-22 | Philips Electronics Nv | Elektrisch programmierbare Halbleiterspeicher. |
US5850093A (en) * | 1989-11-20 | 1998-12-15 | Tarng; Huang Chang | Uni-directional flash device |
US5264384A (en) * | 1991-08-30 | 1993-11-23 | Texas Instruments Incorporated | Method of making a non-volatile memory cell |
US6128211A (en) * | 1997-11-06 | 2000-10-03 | National Science Council | Structures of a low-voltage-operative non-volatile ferroelectric memory device with floating gate |
US6117739A (en) * | 1998-10-02 | 2000-09-12 | Advanced Micro Devices, Inc. | Semiconductor device with layered doped regions and methods of manufacture |
US6677640B1 (en) * | 2000-03-01 | 2004-01-13 | Micron Technology, Inc. | Memory cell with tight coupling |
KR100375232B1 (ko) * | 2001-03-20 | 2003-03-08 | 삼성전자주식회사 | 비휘발성 메모리 소자의 제조방법 |
US6980471B1 (en) | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2152803A1 (fr) * | 1971-09-08 | 1973-04-27 | Sony Corp | |
US3774087A (en) * | 1972-12-05 | 1973-11-20 | Plessey Handel Investment Ag | Memory elements |
US3996657A (en) * | 1974-12-30 | 1976-12-14 | Intel Corporation | Double polycrystalline silicon gate memory device |
US4035820A (en) * | 1975-12-29 | 1977-07-12 | Texas Instruments Incorporated | Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3887407A (en) * | 1967-02-03 | 1975-06-03 | Hitachi Ltd | Method of manufacturing semiconductor device with nitride oxide double layer film |
US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
JPS5636585B2 (fr) * | 1973-07-02 | 1981-08-25 | ||
JPS5024084A (fr) * | 1973-07-05 | 1975-03-14 | ||
US3923559A (en) * | 1975-01-13 | 1975-12-02 | Bell Telephone Labor Inc | Use of trapped hydrogen for annealing metal-oxide-semiconductor devices |
JPS51122383A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor memory |
US4000504A (en) * | 1975-05-12 | 1976-12-28 | Hewlett-Packard Company | Deep channel MOS transistor |
US4010482A (en) * | 1975-12-31 | 1977-03-01 | International Business Machines Corporation | Non-volatile schottky barrier diode memory cell |
-
1977
- 1977-09-30 US US05/838,437 patent/US4163985A/en not_active Expired - Lifetime
-
1978
- 1978-09-15 GB GB7836946A patent/GB2005914B/en not_active Expired
- 1978-09-27 DE DE19782842122 patent/DE2842122A1/de not_active Withdrawn
- 1978-09-27 FR FR7827688A patent/FR2404893A1/fr not_active Withdrawn
- 1978-09-29 NL NL7809899A patent/NL7809899A/xx not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2152803A1 (fr) * | 1971-09-08 | 1973-04-27 | Sony Corp | |
US3774087A (en) * | 1972-12-05 | 1973-11-20 | Plessey Handel Investment Ag | Memory elements |
US3996657A (en) * | 1974-12-30 | 1976-12-14 | Intel Corporation | Double polycrystalline silicon gate memory device |
US4035820A (en) * | 1975-12-29 | 1977-07-12 | Texas Instruments Incorporated | Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping |
Also Published As
Publication number | Publication date |
---|---|
US4163985A (en) | 1979-08-07 |
DE2842122A1 (de) | 1979-04-12 |
GB2005914A (en) | 1979-04-25 |
GB2005914B (en) | 1982-05-19 |
NL7809899A (nl) | 1979-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |