FR2404892A1 - Elements de memoire a semiconducteurs et procede pour sa fabrication - Google Patents
Elements de memoire a semiconducteurs et procede pour sa fabricationInfo
- Publication number
- FR2404892A1 FR2404892A1 FR7827371A FR7827371A FR2404892A1 FR 2404892 A1 FR2404892 A1 FR 2404892A1 FR 7827371 A FR7827371 A FR 7827371A FR 7827371 A FR7827371 A FR 7827371A FR 2404892 A1 FR2404892 A1 FR 2404892A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor memory
- manufacturing
- memory elements
- conductor
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/92—Conductor layers on different levels connected in parallel, e.g. to reduce resistance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
L'invention concerne un élément de mémoire à semiconducteurs et un procédé pour sa fabrication. Cet élément de mémoire, qui est réalisé sur une couche semiconductrice 1, comporte un conducteur de mots 9 et un conducteur de potentiel de référence 6 qui sont parallèles entre eux, s'étendent approximativement perpendiculairement à un conducteur de bits 2 et sont disposés au voisinage immédiat l'un de l'autre. Application notamment aux mémoires numériques à semi-conducteurs à densité de bits élevée.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743619 DE2743619A1 (de) | 1977-09-28 | 1977-09-28 | Halbleiter-speicherelement und verfahren zu seiner herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2404892A1 true FR2404892A1 (fr) | 1979-04-27 |
FR2404892B1 FR2404892B1 (fr) | 1984-01-13 |
Family
ID=6020124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7827371A Granted FR2404892A1 (fr) | 1977-09-28 | 1978-09-25 | Elements de memoire a semiconducteurs et procede pour sa fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US4206471A (fr) |
JP (1) | JPS5458385A (fr) |
DE (1) | DE2743619A1 (fr) |
FR (1) | FR2404892A1 (fr) |
GB (1) | GB2005077B (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597805A (en) * | 1979-10-11 | 1986-07-01 | Texas Instruments Incorporated | Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM |
USRE32236E (en) * | 1979-12-26 | 1986-08-26 | International Business Machines Corporation | One device field effect transistor (FET) AC stable random access memory (RAM) array |
US4319342A (en) * | 1979-12-26 | 1982-03-09 | International Business Machines Corporation | One device field effect transistor (FET) AC stable random access memory (RAM) array |
JPS6054471A (ja) * | 1983-09-05 | 1985-03-28 | Hitachi Ltd | 半導体メモリ |
JPS61127161A (ja) * | 1984-11-26 | 1986-06-14 | Fujitsu Ltd | 半導体記憶装置 |
KR920007358B1 (ko) * | 1990-03-28 | 1992-08-31 | 금성일렉트론 주식회사 | 고집적 메모리 셀 및 코아 어레이 구조 |
KR100721304B1 (ko) * | 2000-12-29 | 2007-05-25 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 액정패널 및 그의 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
US4012757A (en) * | 1975-05-05 | 1977-03-15 | Intel Corporation | Contactless random-access memory cell and cell pair |
US3997799A (en) * | 1975-09-15 | 1976-12-14 | Baker Roger T | Semiconductor-device for the storage of binary data |
US4150389A (en) * | 1976-09-29 | 1979-04-17 | Siemens Aktiengesellschaft | N-channel memory field effect transistor |
US4139786A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static MOS memory cell using inverted N-channel field-effect transistor |
-
1977
- 1977-09-28 DE DE19772743619 patent/DE2743619A1/de not_active Withdrawn
-
1978
- 1978-09-18 US US05/943,065 patent/US4206471A/en not_active Expired - Lifetime
- 1978-09-25 FR FR7827371A patent/FR2404892A1/fr active Granted
- 1978-09-27 GB GB7838261A patent/GB2005077B/en not_active Expired
- 1978-09-28 JP JP11986778A patent/JPS5458385A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5458385A (en) | 1979-05-11 |
GB2005077A (en) | 1979-04-11 |
GB2005077B (en) | 1982-03-31 |
FR2404892B1 (fr) | 1984-01-13 |
US4206471A (en) | 1980-06-03 |
JPS6244428B2 (fr) | 1987-09-21 |
DE2743619A1 (de) | 1979-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |