ATE47500T1 - Halbleiterspeicher mit redundanter schaltung. - Google Patents

Halbleiterspeicher mit redundanter schaltung.

Info

Publication number
ATE47500T1
ATE47500T1 AT83900537T AT83900537T ATE47500T1 AT E47500 T1 ATE47500 T1 AT E47500T1 AT 83900537 T AT83900537 T AT 83900537T AT 83900537 T AT83900537 T AT 83900537T AT E47500 T1 ATE47500 T1 AT E47500T1
Authority
AT
Austria
Prior art keywords
bit
semiconductor memory
columns
redundant circuit
redundant
Prior art date
Application number
AT83900537T
Other languages
English (en)
Inventor
Elvan S Young
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE47500T1 publication Critical patent/ATE47500T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
AT83900537T 1982-02-05 1982-12-28 Halbleiterspeicher mit redundanter schaltung. ATE47500T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/345,986 US4471472A (en) 1982-02-05 1982-02-05 Semiconductor memory utilizing an improved redundant circuitry configuration
EP83900537A EP0099910B1 (de) 1982-02-05 1982-12-28 Halbleiterspeicher mit redundanter schaltung
PCT/US1982/001826 WO1983002847A1 (en) 1982-02-05 1982-12-28 Semiconductor memory utilizing redundant circuitry

Publications (1)

Publication Number Publication Date
ATE47500T1 true ATE47500T1 (de) 1989-11-15

Family

ID=23357436

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83900537T ATE47500T1 (de) 1982-02-05 1982-12-28 Halbleiterspeicher mit redundanter schaltung.

Country Status (6)

Country Link
US (1) US4471472A (de)
EP (1) EP0099910B1 (de)
JP (1) JPS59500117A (de)
AT (1) ATE47500T1 (de)
DE (1) DE3279995D1 (de)
WO (1) WO1983002847A1 (de)

Families Citing this family (49)

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Publication number Priority date Publication date Assignee Title
DE3221268C1 (de) * 1982-06-04 1983-12-15 Siemens AG, 1000 Berlin und 8000 München Speicherbaustein
US4562576A (en) * 1982-08-14 1985-12-31 International Computers Limited Data storage apparatus
JPS59144098A (ja) * 1983-02-08 1984-08-17 Fujitsu Ltd 半導体記憶装置
US4566102A (en) * 1983-04-18 1986-01-21 International Business Machines Corporation Parallel-shift error reconfiguration
EP0150194A4 (de) * 1983-07-14 1988-04-26 Advanced Micro Devices Inc Byte-organisierte speicheranordnung mit einer spaltenredundanz-schaltung.
US4608687A (en) * 1983-09-13 1986-08-26 International Business Machines Corporation Bit steering apparatus and method for correcting errors in stored data, storing the address of the corrected data and using the address to maintain a correct data condition
JPH0666394B2 (ja) * 1983-12-16 1994-08-24 富士通株式会社 半導体記憶装置
GB2154032B (en) * 1984-02-08 1988-04-20 Inmos Ltd A repairable memory array
US4670878A (en) * 1984-08-14 1987-06-02 Texas Instruments Incorporated Column shift circuitry for high speed testing of semiconductor memory devices
US4598388A (en) * 1985-01-22 1986-07-01 Texas Instruments Incorporated Semiconductor memory with redundant column circuitry
US4691300A (en) * 1985-12-20 1987-09-01 Motorola, Inc. Redundant column substitution architecture with improved column access time
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
US5020030A (en) * 1988-10-31 1991-05-28 Huber Robert J Nonvolatile SNOS memory cell with induced capacitor
EP0378332B1 (de) * 1989-01-10 1996-04-03 Matsushita Electronics Corporation Halbleiterspeichergerät mit Redundanzschaltungen
US4996670A (en) * 1989-09-28 1991-02-26 International Business Machines Corporation Zero standby power, radiation hardened, memory redundancy circuit
FR2655177A1 (fr) * 1989-11-24 1991-05-31 Sgs Thomson Microelectronics Circuit de redondance avec memorisation de position de plot de sortie.
US5103424A (en) * 1990-03-26 1992-04-07 Trw Inc. Memory column interface with fault tolerance
US5270975A (en) * 1990-03-29 1993-12-14 Texas Instruments Incorporated Memory device having a non-uniform redundancy decoder arrangement
US5212693A (en) * 1990-08-02 1993-05-18 Ibm Corporation Small programmable array to the on-chip control store for microcode correction
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
US5265054A (en) * 1990-12-14 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with precharged redundancy multiplexing
EP0490680B1 (de) * 1990-12-14 1996-10-02 STMicroelectronics, Inc. Halbleiterspeicher mit Multiplex-Redundanz
US5257228A (en) * 1991-05-16 1993-10-26 Texas Instruments Incorporated Efficiency improved DRAM row redundancy circuit
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory
US5262994A (en) * 1992-01-31 1993-11-16 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a multiplexer for selecting an output for a redundant memory access
KR960002777B1 (ko) * 1992-07-13 1996-02-26 삼성전자주식회사 반도체 메모리 장치의 로우 리던던시 장치
JPH0683716A (ja) * 1992-09-01 1994-03-25 Rohm Co Ltd 電気的書換可能型不揮発メモリ
US5508963A (en) * 1993-03-12 1996-04-16 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
GB9305801D0 (en) * 1993-03-19 1993-05-05 Deans Alexander R Semiconductor memory system
KR100384610B1 (ko) * 1994-11-23 2003-08-06 소니 일렉트로닉스 인코포레이티드 집적회로랜덤액세스메모리
US5574688A (en) * 1995-05-10 1996-11-12 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
US5696943A (en) * 1995-07-27 1997-12-09 Advanced Micro Devices, Inc. Method and apparatus for quick and reliable design modification on silicon
IL116220A0 (en) * 1995-11-30 1996-01-31 Memsys Ltd Automated process for generating boards from defective chips
US5706292A (en) * 1996-04-25 1998-01-06 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
US5841957A (en) * 1996-05-23 1998-11-24 Acti Technology Corp. Programmable I/O remapper for partially defective memory devices
US5953745A (en) * 1996-11-27 1999-09-14 International Business Machines Corporation Redundant memory array
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
US6144591A (en) * 1997-12-30 2000-11-07 Mosaid Technologies Incorporated Redundancy selection circuit for semiconductor memories
JPH11317091A (ja) * 1998-04-30 1999-11-16 Nec Corp 半導体記憶装置
US6484271B1 (en) * 1999-09-16 2002-11-19 Koninklijke Philips Electronics N.V. Memory redundancy techniques
US6507524B1 (en) 2000-11-30 2003-01-14 Lsi Logic Corporation Integrated circuit memory having column redundancy
US6366508B1 (en) * 2000-12-04 2002-04-02 Lsi Logic Corporation Integrated circuit memory having column redundancy with no timing penalty
EP1365419B1 (de) * 2002-05-21 2008-12-31 STMicroelectronics S.r.l. Selbstreparaturverfahren für nichtflüchtige Speicheranordnung mit Lösch-/Programmierfehlerdetektion, und nichtflüchtige Speicheranordnung dafür
EP1394559A1 (de) * 2002-08-27 2004-03-03 Siemens Aktiengesellschaft Verfahren und Anordnung zur Erkennung und Behebung von Leitungsdefekten
JP4152736B2 (ja) * 2002-12-11 2008-09-17 株式会社ルネサステクノロジ 半導体記憶装置
US7064990B1 (en) * 2005-02-09 2006-06-20 International Business Machines Corporation Method and apparatus for implementing multiple column redundancy for memory
JP2007257791A (ja) * 2006-03-24 2007-10-04 Fujitsu Ltd 半導体記憶装置
US9445027B2 (en) * 2014-02-20 2016-09-13 Semiconductor Components Industries, Llc Image sensors with column memory repair circuitry

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
US4310901A (en) * 1979-06-11 1982-01-12 Electronic Memories & Magnetics Corporation Address mapping for memory

Also Published As

Publication number Publication date
JPH0318279B2 (de) 1991-03-12
EP0099910A4 (de) 1987-01-10
US4471472A (en) 1984-09-11
DE3279995D1 (en) 1989-11-23
EP0099910A1 (de) 1984-02-08
EP0099910B1 (de) 1989-10-18
JPS59500117A (ja) 1984-01-19
WO1983002847A1 (en) 1983-08-18

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee