DE3382728D1 - Halbleiteranordnung mit Ersatzspeicherzellen. - Google Patents

Halbleiteranordnung mit Ersatzspeicherzellen.

Info

Publication number
DE3382728D1
DE3382728D1 DE83100649T DE3382728T DE3382728D1 DE 3382728 D1 DE3382728 D1 DE 3382728D1 DE 83100649 T DE83100649 T DE 83100649T DE 3382728 T DE3382728 T DE 3382728T DE 3382728 D1 DE3382728 D1 DE 3382728D1
Authority
DE
Germany
Prior art keywords
spare memory
memory cells
semiconductor arrangement
circuits
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE83100649T
Other languages
English (en)
Other versions
DE3382728T2 (de
Inventor
Kiyofumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3382728D1 publication Critical patent/DE3382728D1/de
Application granted granted Critical
Publication of DE3382728T2 publication Critical patent/DE3382728T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
DE83100649T 1982-01-29 1983-01-25 Halbleiteranordnung mit Ersatzspeicherzellen. Expired - Lifetime DE3382728T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57012781A JPS58130495A (ja) 1982-01-29 1982-01-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3382728D1 true DE3382728D1 (de) 1994-02-03
DE3382728T2 DE3382728T2 (de) 1994-04-14

Family

ID=11814937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE83100649T Expired - Lifetime DE3382728T2 (de) 1982-01-29 1983-01-25 Halbleiteranordnung mit Ersatzspeicherzellen.

Country Status (4)

Country Link
US (1) US4566081A (de)
EP (1) EP0085386B1 (de)
JP (1) JPS58130495A (de)
DE (1) DE3382728T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS59152597A (ja) * 1983-02-18 1984-08-31 Nec Corp メモリ回路
US4601019B1 (en) * 1983-08-31 1997-09-30 Texas Instruments Inc Memory with redundancy
US4639915A (en) * 1983-10-06 1987-01-27 Eaton Corporation High speed redundancy processor
JPH0666120B2 (ja) * 1983-11-09 1994-08-24 株式会社東芝 半導体記憶装置の冗長部
GB2154032B (en) * 1984-02-08 1988-04-20 Inmos Ltd A repairable memory array
US4590388A (en) * 1984-04-23 1986-05-20 At&T Bell Laboratories CMOS spare decoder circuit
NL8401569A (nl) * 1984-05-16 1985-12-16 Philips Nv Serie-parallel-serie-digitaal werkend systeem.
JPS6199999A (ja) * 1984-10-19 1986-05-19 Hitachi Ltd 半導体記憶装置
FR2576132B1 (fr) * 1985-01-15 1990-06-29 Eurotechnique Sa Memoire en circuit integre
JPH0754639B2 (ja) * 1985-08-17 1995-06-07 三洋電機株式会社 半導体メモリ
EP0257987B1 (de) * 1986-08-22 1991-11-06 Fujitsu Limited Halbleiter-Speicheranordnung
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
JPH01224999A (ja) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp 半導体記憶装置
US5022006A (en) * 1988-04-01 1991-06-04 International Business Machines Corporation Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US5255228A (en) * 1989-01-10 1993-10-19 Matsushita Electronics Corporation Semiconductor memory device with redundancy circuits
EP0378332B1 (de) * 1989-01-10 1996-04-03 Matsushita Electronics Corporation Halbleiterspeichergerät mit Redundanzschaltungen
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
JP2575919B2 (ja) * 1990-03-22 1997-01-29 株式会社東芝 半導体記憶装置の冗長回路
JPH043399A (ja) * 1990-04-19 1992-01-08 Sharp Corp 半導体記憶装置
DE69122481T2 (de) * 1990-12-14 1997-02-20 Sgs Thomson Microelectronics Halbleiterspeicher mit Multiplex-Redundanz
JP2717740B2 (ja) * 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
US5424986A (en) * 1991-12-19 1995-06-13 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with power-on reset control of disabled rows
KR940008213B1 (ko) * 1991-12-31 1994-09-08 현대전자산업 주식회사 컬럼 리페어의 입출력 선택회로
US5673227A (en) * 1996-05-14 1997-09-30 Motorola, Inc. Integrated circuit memory with multiplexed redundant column data path
US5781717A (en) * 1996-09-19 1998-07-14 I-Cube, Inc. Dynamic spare column replacement memory system
DE10008578A1 (de) * 2000-02-24 2001-09-06 Infineon Technologies Ag Redundanz-Multiplexer für Halbleiterspeicheranordnung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
DE3071955D1 (en) * 1979-06-15 1987-05-27 Fujitsu Ltd Semiconductor memory device
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
JPS6051199B2 (ja) * 1980-11-13 1985-11-12 富士通株式会社 半導体装置
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements

Also Published As

Publication number Publication date
US4566081A (en) 1986-01-21
JPS58130495A (ja) 1983-08-03
JPH0263279B2 (de) 1990-12-27
DE3382728T2 (de) 1994-04-14
EP0085386B1 (de) 1993-12-22
EP0085386A3 (en) 1986-10-01
EP0085386A2 (de) 1983-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)