FR2400748A1 - Matrice a semi-conducteurs pour memoire permanente integree - Google Patents
Matrice a semi-conducteurs pour memoire permanente integreeInfo
- Publication number
- FR2400748A1 FR2400748A1 FR7823868A FR7823868A FR2400748A1 FR 2400748 A1 FR2400748 A1 FR 2400748A1 FR 7823868 A FR7823868 A FR 7823868A FR 7823868 A FR7823868 A FR 7823868A FR 2400748 A1 FR2400748 A1 FR 2400748A1
- Authority
- FR
- France
- Prior art keywords
- conductivity
- semiconductor
- layer
- type
- bars
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 239000011159 matrix material Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
Matrice à semi-conducteurs pour mémoire permanente intégrée, réalisée à base d'éléments comportant une région semi-conductrice d'un premier type de conductivité, la région d'au moins une partie des éléments étant pourvue dans la couche présuperficielle d'une région semi-conductrice du second type de conductivité, lesdits éléments étant formés à l'intersection de barres semi-conductrices du premier type de conductivité, réalisées dans un substrat semi-conducteur, et de barres métalliques disposées sur une couche de diélectrique qui isole les barres semi-conductrices par rapport aux barres métalliques, tandis qu'au-dessus d'une partie des éléments dans la couche diélectrique, sont pratiquées au-dessus du second type de conductivité des ouvertures pour assurer le contact électrique entre lesdites régions du second type de conductivité et les barres métalliques, ladite matrice à semi-conducteurs étant caractérisée en ce que les barres semi-conductrices 4 comportent une couche supplémentaire 6 disposée entre le substrat 1 et la couche présuperficielle 5 et de même type de conductivité que ladite couche présuperficielle, la conductivité de la couche supplémentaire étant supérieure à la conductibilité de la couche présuperficielle et limitée par la solubilité limite de l'impureté de dopage dans le matériau d'une barre semi-conductrice.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2517206 | 1977-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2400748A1 true FR2400748A1 (fr) | 1979-03-16 |
Family
ID=20721978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7823868A Withdrawn FR2400748A1 (fr) | 1977-08-16 | 1978-08-16 | Matrice a semi-conducteurs pour memoire permanente integree |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5448452A (fr) |
DE (1) | DE2835086A1 (fr) |
FR (1) | FR2400748A1 (fr) |
GB (1) | GB2004687A (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1240476A (en) * | 1967-12-01 | 1971-07-28 | Plessey Co Ltd | Improvements relating to information storage devices |
FR2088478A1 (fr) * | 1970-05-11 | 1972-01-07 | Siemens Ag | |
FR2168213A1 (fr) * | 1972-01-20 | 1973-08-31 | Garyainov Stanislav | |
US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
-
1978
- 1978-08-10 DE DE19782835086 patent/DE2835086A1/de not_active Withdrawn
- 1978-08-15 JP JP9875878A patent/JPS5448452A/ja active Pending
- 1978-08-16 GB GB7833604A patent/GB2004687A/en not_active Withdrawn
- 1978-08-16 FR FR7823868A patent/FR2400748A1/fr not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1240476A (en) * | 1967-12-01 | 1971-07-28 | Plessey Co Ltd | Improvements relating to information storage devices |
FR2088478A1 (fr) * | 1970-05-11 | 1972-01-07 | Siemens Ag | |
FR2168213A1 (fr) * | 1972-01-20 | 1973-08-31 | Garyainov Stanislav | |
US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
Also Published As
Publication number | Publication date |
---|---|
DE2835086A1 (de) | 1979-03-01 |
JPS5448452A (en) | 1979-04-17 |
GB2004687A (en) | 1979-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |