JPS5448452A - Integrated readdonly memory - Google Patents
Integrated readdonly memoryInfo
- Publication number
- JPS5448452A JPS5448452A JP9875878A JP9875878A JPS5448452A JP S5448452 A JPS5448452 A JP S5448452A JP 9875878 A JP9875878 A JP 9875878A JP 9875878 A JP9875878 A JP 9875878A JP S5448452 A JPS5448452 A JP S5448452A
- Authority
- JP
- Japan
- Prior art keywords
- readdonly
- integrated
- memory
- readdonly memory
- integrated readdonly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2517206 | 1977-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5448452A true JPS5448452A (en) | 1979-04-17 |
Family
ID=20721978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9875878A Pending JPS5448452A (en) | 1977-08-16 | 1978-08-15 | Integrated readdonly memory |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5448452A (ja) |
DE (1) | DE2835086A1 (ja) |
FR (1) | FR2400748A1 (ja) |
GB (1) | GB2004687A (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1240476A (en) * | 1967-12-01 | 1971-07-28 | Plessey Co Ltd | Improvements relating to information storage devices |
DE2022918C3 (de) * | 1970-05-11 | 1979-02-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierter Halbleiter-Festwertspeicher |
FR2168213B1 (ja) * | 1972-01-20 | 1977-07-15 | Garyainov Stanislav | |
US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
-
1978
- 1978-08-10 DE DE19782835086 patent/DE2835086A1/de not_active Withdrawn
- 1978-08-15 JP JP9875878A patent/JPS5448452A/ja active Pending
- 1978-08-16 FR FR7823868A patent/FR2400748A1/fr not_active Withdrawn
- 1978-08-16 GB GB7833604A patent/GB2004687A/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
Also Published As
Publication number | Publication date |
---|---|
DE2835086A1 (de) | 1979-03-01 |
FR2400748A1 (fr) | 1979-03-16 |
GB2004687A (en) | 1979-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2034942B (en) | Errorcorrecting memory | |
JPS53124085A (en) | Semiconductor memory | |
JPS544539A (en) | Semiconductor memory | |
JPS535937A (en) | Firsttin firsttout memory | |
JPS5472922A (en) | Memory | |
GB2006562B (en) | Memory circuit | |
JPS53102054A (en) | Horogram memory device | |
GB2004432B (en) | Semiconductor memory | |
JPS5396782A (en) | Semiconductor memory | |
JPS52142929A (en) | Memory | |
JPS5426672A (en) | Semiconductor memory | |
JPS5335336A (en) | Memory | |
JPS5317038A (en) | Memory | |
DE2861509D1 (en) | Integrated read-only memory | |
JPS5469920A (en) | Electronic memory | |
JPS5474684A (en) | Nnchannel mos memory | |
JPS5474334A (en) | Text memory | |
JPS52147934A (en) | Memory | |
JPS53105986A (en) | Semiconductor memory | |
JPS5328343A (en) | Memory | |
JPS5315719A (en) | Memory | |
JPS5394139A (en) | Memory | |
JPS53148286A (en) | Semiconductor memory | |
JPS5486758A (en) | Chip parts | |
JPS53121528A (en) | Semiconductor memory |