FR2400747A1 - Matrice a semi-conducteurs pour memoire permanente a circuits integres - Google Patents

Matrice a semi-conducteurs pour memoire permanente a circuits integres

Info

Publication number
FR2400747A1
FR2400747A1 FR7823872A FR7823872A FR2400747A1 FR 2400747 A1 FR2400747 A1 FR 2400747A1 FR 7823872 A FR7823872 A FR 7823872A FR 7823872 A FR7823872 A FR 7823872A FR 2400747 A1 FR2400747 A1 FR 2400747A1
Authority
FR
France
Prior art keywords
conductivity type
semiconductor
bars
elements
permanent memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7823872A
Other languages
English (en)
Other versions
FR2400747B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KRUZHANOV JURY
Original Assignee
KRUZHANOV JURY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KRUZHANOV JURY filed Critical KRUZHANOV JURY
Publication of FR2400747A1 publication Critical patent/FR2400747A1/fr
Application granted granted Critical
Publication of FR2400747B1 publication Critical patent/FR2400747B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Matrice à semi-conducteurs pour mémoire permanente intégrée, composée d'éléments comportant une région d'un premier type de conductivité, dans lequel, au moins dans une partie des éléments, une région 5 du second type de conductivité étant prévue dans au moins une partie de ces éléments, ceux-ci étant formés à l'intersection de barres semi-conductrices 2 du premier type de conductivité réalisées dans le substrat, et de barres métalliques 3 disposées sur une couche diélectrique 4 qui isole les barres semi-conductrices des barres métalliques, des fenêtres étant prévues dans la couche diélectrique au-dessus des régions 5 du second type de conductivité, au moins une partie de ces fenêtres comportant des ouvertures 6 assurant le contact électrique entre les régions semi-conductrices 5 du second type de conductivité avec les barres métalliques, ladite matrice étant caractérisée en ce que les régions 5 du second type de conductivité ne sont associées qu'aux éléments, au-dessus desquels sont pratiquées des ouvertures 6, dans la couche diélectrique 4, ces dernieres coïncidant avec les fenêtres.
FR7823872A 1977-08-16 1978-08-16 Matrice a semi-conducteurs pour memoire permanente a circuits integres Granted FR2400747A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2517209 1977-08-16

Publications (2)

Publication Number Publication Date
FR2400747A1 true FR2400747A1 (fr) 1979-03-16
FR2400747B1 FR2400747B1 (fr) 1984-11-23

Family

ID=20721981

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7823872A Granted FR2400747A1 (fr) 1977-08-16 1978-08-16 Matrice a semi-conducteurs pour memoire permanente a circuits integres

Country Status (5)

Country Link
US (1) US4195354A (fr)
JP (1) JPS5448453A (fr)
DE (1) DE2835087C2 (fr)
FR (1) FR2400747A1 (fr)
GB (1) GB2004688B (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721964A (en) * 1970-02-18 1973-03-20 Hewlett Packard Co Integrated circuit read only memory bit organized in coincident select structure
US3717852A (en) * 1971-09-17 1973-02-20 Ibm Electronically rewritable read-only memory using via connections
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
JPS5416990A (en) * 1977-07-08 1979-02-07 Hitachi Ltd Matrix form logic circuit

Also Published As

Publication number Publication date
GB2004688B (en) 1982-05-06
GB2004688A (en) 1979-04-04
DE2835087C2 (de) 1984-10-31
FR2400747B1 (fr) 1984-11-23
DE2835087A1 (de) 1979-03-01
JPS5448453A (en) 1979-04-17
US4195354A (en) 1980-03-25

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Legal Events

Date Code Title Description
ST Notification of lapse