FR2088478A1 - - Google Patents

Info

Publication number
FR2088478A1
FR2088478A1 FR7116554A FR7116554A FR2088478A1 FR 2088478 A1 FR2088478 A1 FR 2088478A1 FR 7116554 A FR7116554 A FR 7116554A FR 7116554 A FR7116554 A FR 7116554A FR 2088478 A1 FR2088478 A1 FR 2088478A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116554A
Other versions
FR2088478B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2088478A1 publication Critical patent/FR2088478A1/fr
Application granted granted Critical
Publication of FR2088478B1 publication Critical patent/FR2088478B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR7116554A 1970-05-11 1971-05-07 Expired FR2088478B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2022918A DE2022918C3 (de) 1970-05-11 1970-05-11 Integrierter Halbleiter-Festwertspeicher

Publications (2)

Publication Number Publication Date
FR2088478A1 true FR2088478A1 (fr) 1972-01-07
FR2088478B1 FR2088478B1 (fr) 1976-05-28

Family

ID=5770767

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116554A Expired FR2088478B1 (fr) 1970-05-11 1971-05-07

Country Status (10)

Country Link
US (1) US3774170A (fr)
JP (1) JPS578555B1 (fr)
AT (1) AT314228B (fr)
CA (1) CA958122A (fr)
CH (1) CH535473A (fr)
DE (1) DE2022918C3 (fr)
FR (1) FR2088478B1 (fr)
GB (1) GB1345762A (fr)
NL (1) NL7106231A (fr)
SE (1) SE379878B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400748A1 (fr) * 1977-08-16 1979-03-16 Kruzhanov Jury Matrice a semi-conducteurs pour memoire permanente integree
EP0196374A1 (fr) * 1979-08-10 1986-10-08 Massachusetts Institute Of Technology Technologie de couches noyées de semi-conducteurs

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931492A (en) * 1972-06-19 1976-01-06 Nippon Telegraph And Telephone Public Corporation Thermal print head
US4099260A (en) * 1976-09-20 1978-07-04 Bell Telephone Laboratories, Incorporated Bipolar read-only-memory unit having self-isolating bit-lines
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US4419741A (en) * 1980-01-28 1983-12-06 Rca Corporation Read only memory (ROM) having high density memory array with on pitch decoder circuitry
JPS61290343A (ja) * 1985-06-18 1986-12-20 Sumitomo Metal Ind Ltd 水分測定方法及び装置
JPS6212838A (ja) * 1985-07-10 1987-01-21 Kawasaki Steel Corp 粉粒体の水分連続測定装置
EP0599388B1 (fr) * 1992-11-20 2000-08-02 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur comportant un élément programmable
JP4010091B2 (ja) * 2000-03-23 2007-11-21 セイコーエプソン株式会社 メモリデバイスおよびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
DE1266353B (de) * 1964-03-13 1968-04-18 Bbc Brown Boveri & Cie Matrixfoermige Anordnung von Oxydschichtdioden zur Verwendung als manipulierbarer Festwertspeicher oder Informationsumsetzer
US3377513A (en) * 1966-05-02 1968-04-09 North American Rockwell Integrated circuit diode matrix
US3541543A (en) * 1966-07-25 1970-11-17 Texas Instruments Inc Binary decoder
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente
US3691627A (en) * 1970-02-03 1972-09-19 Gen Electric Method of fabricating buried metallic film devices
US3611067A (en) * 1970-04-20 1971-10-05 Fairchild Camera Instr Co Complementary npn/pnp structure for monolithic integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400748A1 (fr) * 1977-08-16 1979-03-16 Kruzhanov Jury Matrice a semi-conducteurs pour memoire permanente integree
EP0196374A1 (fr) * 1979-08-10 1986-10-08 Massachusetts Institute Of Technology Technologie de couches noyées de semi-conducteurs

Also Published As

Publication number Publication date
CA958122A (en) 1974-11-19
FR2088478B1 (fr) 1976-05-28
NL7106231A (fr) 1971-11-15
GB1345762A (en) 1974-02-06
CH535473A (de) 1973-03-31
DE2022918C3 (de) 1979-02-22
DE2022918B2 (fr) 1978-06-22
US3774170A (en) 1973-11-20
JPS578555B1 (fr) 1982-02-17
AT314228B (de) 1974-03-25
DE2022918A1 (de) 1971-11-25
SE379878B (fr) 1975-10-20

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Legal Events

Date Code Title Description
ST Notification of lapse