FR2408216A1 - Procede de fabrication de circuits integres a semi-conducteurs et circuit integre obtenu par ce procede - Google Patents

Procede de fabrication de circuits integres a semi-conducteurs et circuit integre obtenu par ce procede

Info

Publication number
FR2408216A1
FR2408216A1 FR7830290A FR7830290A FR2408216A1 FR 2408216 A1 FR2408216 A1 FR 2408216A1 FR 7830290 A FR7830290 A FR 7830290A FR 7830290 A FR7830290 A FR 7830290A FR 2408216 A1 FR2408216 A1 FR 2408216A1
Authority
FR
France
Prior art keywords
manufacturing semiconductor
circuit obtained
integrated circuit
conduction
integrated circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7830290A
Other languages
English (en)
Other versions
FR2408216B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KRUZHANOV JURY
Original Assignee
KRUZHANOV JURY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KRUZHANOV JURY filed Critical KRUZHANOV JURY
Publication of FR2408216A1 publication Critical patent/FR2408216A1/fr
Application granted granted Critical
Publication of FR2408216B1 publication Critical patent/FR2408216B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

LE CIRCUIT INTEGRE A SEMI-CONDUCTEURS COMPORTE DES RESISTANCES IV DU TYPE P REALISEES A PARTIR DE LA COUCHE EPITAXIALE 3 A CONDUCTION P LIMITEE PAR LES REGIONS 2 ET 8 A CONDUCTEURS N, DES TRANSISTORS II DU TYPE NPN DONT LE COLLECTEUR L'ISOLE PAR RAPPORT AUX AUTRES ELEMENTS DU CIRCUIT, CE TRANSISTOR ETANT REALISE A PARTIR DE REGIONS 2 ET 6 DE PREMIERE ET DEUXIEME COUCHES 4, LA BASE ETANT CONSTITUEE PAR UNE PARTIE DE LA COUCHE EPITAXIALE 3 A CONDUCTION P ET LIMITEE PAR LA REGION DE COLLECTEUR. L'EMETTEUR EST CONSTITUE PAR UNE REGION 18 A CONDUCTION N DE LA TROISIEME COUCHE 10 ET FORMEE DANS LA REGION DE BASE.
FR7830290A 1977-11-02 1978-10-25 Procede de fabrication de circuits integres a semi-conducteurs et circuit integre obtenu par ce procede Granted FR2408216A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU772540035A SU773793A1 (ru) 1977-11-02 1977-11-02 Способ изготовлени полупроводниковых интегральных бипол рных схем

Publications (2)

Publication Number Publication Date
FR2408216A1 true FR2408216A1 (fr) 1979-06-01
FR2408216B1 FR2408216B1 (fr) 1983-12-02

Family

ID=20731526

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7830290A Granted FR2408216A1 (fr) 1977-11-02 1978-10-25 Procede de fabrication de circuits integres a semi-conducteurs et circuit integre obtenu par ce procede

Country Status (6)

Country Link
US (1) US4247343A (fr)
JP (1) JPS5499582A (fr)
DE (1) DE2846881A1 (fr)
FR (1) FR2408216A1 (fr)
GB (1) GB2009498B (fr)
SU (1) SU773793A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024896A2 (fr) * 1979-08-27 1981-03-11 Fujitsu Limited Dispositif semiconducteur et procédé pour sa fabrication

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
US5504363A (en) * 1992-09-02 1996-04-02 Motorola Inc. Semiconductor device
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
US6835634B1 (en) 1995-08-25 2004-12-28 Micron Technology, Inc. Streamlined field isolation process
KR100740126B1 (ko) * 2006-02-02 2007-07-16 삼성에스디아이 주식회사 이차 전지 모듈용 격벽 및 이를 포함하는 이차 전지 모듈

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
FR2160463A1 (fr) * 1971-11-15 1973-06-29 Ibm
FR2209217A1 (fr) * 1972-11-10 1974-06-28 Lignes Telegraph Telephon
FR2285715A1 (fr) * 1974-09-23 1976-04-16 Nat Semiconductor Corp Transistor a isolement diffuse du collecteur

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US3575741A (en) * 1968-02-05 1971-04-20 Bell Telephone Labor Inc Method for producing semiconductor integrated circuit device and product produced thereby
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
JPS5548704B2 (fr) * 1973-06-01 1980-12-08
US3925105A (en) * 1974-07-02 1975-12-09 Texas Instruments Inc Process for fabricating integrated circuits utilizing ion implantation
CA1056513A (fr) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Mode de fabrication de circuit logique integre
US4025364A (en) * 1975-08-11 1977-05-24 Fairchild Camera And Instrument Corporation Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
FR2160463A1 (fr) * 1971-11-15 1973-06-29 Ibm
FR2209217A1 (fr) * 1972-11-10 1974-06-28 Lignes Telegraph Telephon
FR2285715A1 (fr) * 1974-09-23 1976-04-16 Nat Semiconductor Corp Transistor a isolement diffuse du collecteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024896A2 (fr) * 1979-08-27 1981-03-11 Fujitsu Limited Dispositif semiconducteur et procédé pour sa fabrication
EP0024896A3 (en) * 1979-08-27 1982-11-03 Fujitsu Limited A semiconductor device and a method of manufacturing the device

Also Published As

Publication number Publication date
GB2009498B (en) 1982-06-30
JPS5499582A (en) 1979-08-06
GB2009498A (en) 1979-06-13
DE2846881A1 (de) 1979-05-03
US4247343A (en) 1981-01-27
FR2408216B1 (fr) 1983-12-02
SU773793A1 (ru) 1980-10-23

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