FR2393432A1 - Thyristor declenche par une tension qui diminue rapidement - Google Patents
Thyristor declenche par une tension qui diminue rapidementInfo
- Publication number
- FR2393432A1 FR2393432A1 FR7732103A FR7732103A FR2393432A1 FR 2393432 A1 FR2393432 A1 FR 2393432A1 FR 7732103 A FR7732103 A FR 7732103A FR 7732103 A FR7732103 A FR 7732103A FR 2393432 A1 FR2393432 A1 FR 2393432A1
- Authority
- FR
- France
- Prior art keywords
- thyristor
- decreasing voltage
- triggered
- quickly decreasing
- thyristor triggered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003247 decreasing effect Effects 0.000 title abstract 3
- 230000001960 triggered effect Effects 0.000 title abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73679576A | 1976-10-29 | 1976-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2393432A1 true FR2393432A1 (fr) | 1978-12-29 |
| FR2393432B1 FR2393432B1 ( ) | 1983-08-26 |
Family
ID=24961330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7732103A Granted FR2393432A1 (fr) | 1976-10-29 | 1977-10-25 | Thyristor declenche par une tension qui diminue rapidement |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5356979A ( ) |
| AU (1) | AU516308B2 ( ) |
| BE (1) | BE859992A ( ) |
| BR (1) | BR7707015A ( ) |
| CA (1) | CA1104726A ( ) |
| DE (1) | DE2748528A1 ( ) |
| FR (1) | FR2393432A1 ( ) |
| GB (1) | GB1592877A ( ) |
| HK (1) | HK64384A ( ) |
| IN (1) | IN148845B ( ) |
| PL (1) | PL117693B1 ( ) |
| SE (1) | SE7712091L ( ) |
| ZA (1) | ZA775629B ( ) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3000804A1 (de) * | 1980-01-11 | 1981-07-16 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer |
| JPS5935689U (ja) * | 1982-08-30 | 1984-03-06 | 株式会社東芝 | 冷凍サイクル装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2047342A1 (de) * | 1969-09-25 | 1971-04-01 | Tokyo Shibaura Electric Co | Halbleiterschalteinnchtung |
| FR2144581A1 ( ) * | 1971-07-06 | 1973-02-16 | Silec Semi Conducteurs | |
| FR2173913A1 ( ) * | 1972-03-03 | 1973-10-12 | Siemens Ag | |
| DE2449089A1 (de) * | 1973-10-17 | 1975-04-30 | Hitachi Ltd | Halbleitergesteuerter gleichrichter |
| DE2604480A1 (de) * | 1975-02-07 | 1976-09-02 | Hitachi Ltd | Thyristor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
| GB1425651A (en) * | 1972-04-03 | 1976-02-18 | Motorola Inc | Channel firing thyristor |
| DE2346256C3 (de) * | 1973-09-13 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
-
1977
- 1977-09-20 ZA ZA00775629A patent/ZA775629B/xx unknown
- 1977-09-23 IN IN1434/CAL/77A patent/IN148845B/en unknown
- 1977-10-03 CA CA287,988A patent/CA1104726A/en not_active Expired
- 1977-10-13 GB GB42646/77A patent/GB1592877A/en not_active Expired
- 1977-10-14 AU AU29741/77A patent/AU516308B2/en not_active Expired
- 1977-10-20 BR BR7707015A patent/BR7707015A/pt unknown
- 1977-10-21 BE BE181962A patent/BE859992A/xx not_active IP Right Cessation
- 1977-10-25 FR FR7732103A patent/FR2393432A1/fr active Granted
- 1977-10-27 SE SE7712091A patent/SE7712091L/ not_active Application Discontinuation
- 1977-10-28 PL PL1977201799A patent/PL117693B1/pl unknown
- 1977-10-28 DE DE19772748528 patent/DE2748528A1/de not_active Withdrawn
- 1977-10-28 JP JP12883177A patent/JPS5356979A/ja active Granted
-
1984
- 1984-08-16 HK HK643/84A patent/HK64384A/xx unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2047342A1 (de) * | 1969-09-25 | 1971-04-01 | Tokyo Shibaura Electric Co | Halbleiterschalteinnchtung |
| FR2063016A1 ( ) * | 1969-09-25 | 1971-07-02 | Tokyo Shibaura Electric Co | |
| FR2144581A1 ( ) * | 1971-07-06 | 1973-02-16 | Silec Semi Conducteurs | |
| FR2173913A1 ( ) * | 1972-03-03 | 1973-10-12 | Siemens Ag | |
| DE2449089A1 (de) * | 1973-10-17 | 1975-04-30 | Hitachi Ltd | Halbleitergesteuerter gleichrichter |
| DE2604480A1 (de) * | 1975-02-07 | 1976-09-02 | Hitachi Ltd | Thyristor |
Non-Patent Citations (2)
| Title |
|---|
| EXBK/72 * |
| EXRV/71 * |
Also Published As
| Publication number | Publication date |
|---|---|
| PL117693B1 (en) | 1981-08-31 |
| SE7712091L (sv) | 1978-04-30 |
| FR2393432B1 ( ) | 1983-08-26 |
| GB1592877A (en) | 1981-07-08 |
| BR7707015A (pt) | 1978-07-18 |
| AU516308B2 (en) | 1981-05-28 |
| PL201799A1 (pl) | 1978-05-08 |
| CA1104726A (en) | 1981-07-07 |
| ZA775629B (en) | 1978-08-30 |
| BE859992A (fr) | 1978-04-21 |
| JPS5649459B2 ( ) | 1981-11-21 |
| DE2748528A1 (de) | 1978-05-03 |
| AU2974177A (en) | 1979-04-26 |
| HK64384A (en) | 1984-08-24 |
| JPS5356979A (en) | 1978-05-23 |
| IN148845B ( ) | 1981-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2430090A1 (fr) | Contacts ohmiques non allies sur des semi-conducteurs de type n du groupe iii(a)-v(a) | |
| KR910013576A (ko) | 반도체 장치 및 그 제법 | |
| FR2426992A1 (fr) | Laser a semiconducteur et fabrication de ce laser | |
| FR2393432A1 (fr) | Thyristor declenche par une tension qui diminue rapidement | |
| BR9007213A (pt) | Estrutura de transistor fina,dieletricamente isolada,residente em ilha,tendo baixa resistencia de coletor | |
| FR2445619A1 (fr) | Procede de fabrication d'un dispositif a semi-conducteurs | |
| FR2469038A1 (fr) | Circuit miroir de courant | |
| GB1239067A ( ) | ||
| GB1071137A (en) | Improvements in or relating to semiconductor controlled rectifiers | |
| US3794890A (en) | Thyristor with amplified firing current | |
| FR2402350A1 (fr) | Circuit de commutation a transistors npn | |
| US3418545A (en) | Photosensitive devices having large area light absorbing junctions | |
| US2862115A (en) | Semiconductor circuit controlling devices | |
| US4366496A (en) | Optically activatable semiconductor component | |
| US4343014A (en) | Light-ignitable thyristor with anode-base duct portion extending on cathode surface between thyristor portions | |
| FR2377096A1 (fr) | Thyristor semi-conducteur | |
| GB1477513A (en) | Unidirectional thyristors | |
| JPS566480A (en) | Semiconductor light emitting diode | |
| FR2378385A1 (fr) | Dispositif laser a semi-conducteurs | |
| SE7910463L (sv) | Styrelektrodreglerad halvledaranordning | |
| JPS5595363A (en) | Thyristor | |
| SU682986A1 (ru) | Устройство дл управлени тиристором | |
| GB1220854A (en) | Improvements in transistors | |
| JPS6454761A (en) | Semiconductor device | |
| US4974047A (en) | Light triggered thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |