FR2445619A1 - Procede de fabrication d'un dispositif a semi-conducteurs - Google Patents

Procede de fabrication d'un dispositif a semi-conducteurs

Info

Publication number
FR2445619A1
FR2445619A1 FR7931594A FR7931594A FR2445619A1 FR 2445619 A1 FR2445619 A1 FR 2445619A1 FR 7931594 A FR7931594 A FR 7931594A FR 7931594 A FR7931594 A FR 7931594A FR 2445619 A1 FR2445619 A1 FR 2445619A1
Authority
FR
France
Prior art keywords
junction
semiconductor
doped region
heavily doped
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7931594A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2445619A1 publication Critical patent/FR2445619A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/091—Laser beam processing of fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne la fabrication des dispositifs à semi-conducteurs. On dirige un faisceau laser ou un faisceau d'électrons sur une jonction entre une région plus fortement dopée 22 et une région moins fortement dopée 23 d'un corps semi-conducteur. Le faisceau, dont l'aire de section droite est faible par rapport à l'aire de la jonction, produit une fusion locale du semi-conducteur, entraînant une diffusion des impuretés qui crée une déformation localisée 21 de la jonction. Application au réglage de la tension de claquage des diodes zener.
FR7931594A 1978-12-27 1979-12-24 Procede de fabrication d'un dispositif a semi-conducteurs Withdrawn FR2445619A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/973,713 US4203781A (en) 1978-12-27 1978-12-27 Laser deformation of semiconductor junctions

Publications (1)

Publication Number Publication Date
FR2445619A1 true FR2445619A1 (fr) 1980-07-25

Family

ID=25521161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7931594A Withdrawn FR2445619A1 (fr) 1978-12-27 1979-12-24 Procede de fabrication d'un dispositif a semi-conducteurs

Country Status (6)

Country Link
US (1) US4203781A (fr)
JP (1) JPS55108776A (fr)
CA (1) CA1136774A (fr)
DE (1) DE2951733A1 (fr)
FR (1) FR2445619A1 (fr)
GB (1) GB2038551A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3072182D1 (de) * 1979-07-24 1990-12-06 Hughes Aircraft Co Verfahren zur laserbehandlung fuer "silizium auf saphir".
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4370175A (en) * 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
US4364778A (en) * 1980-05-30 1982-12-21 Bell Telephone Laboratories, Incorporated Formation of multilayer dopant distributions in a semiconductor
US4593306A (en) * 1983-02-24 1986-06-03 Battelle Development Corporation Information storage medium and method of recording and retrieving information thereon
US4849365A (en) * 1988-02-16 1989-07-18 Honeywell Inc. Selective integrated circuit interconnection
US5225371A (en) * 1992-03-17 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Laser formation of graded junction devices
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
US20110169520A1 (en) * 2010-01-14 2011-07-14 Mks Instruments, Inc. Apparatus for measuring minority carrier lifetime and method for using the same
JP2017011253A (ja) * 2015-06-24 2017-01-12 住友電工プリントサーキット株式会社 フレキシブルプリント配線板
WO2020198930A1 (fr) 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Appareils de détection de rayonnement et leurs procédés de fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1194049A (en) * 1966-12-30 1970-06-10 Texas Instruments Inc Method of Making a Junction in a Semiconductor Body
FR2090238A1 (fr) * 1970-05-22 1972-01-14 Philips Nv
US3725148A (en) * 1970-08-31 1973-04-03 D Kendall Individual device tuning using localized solid-state reactions
FR2152656A1 (fr) * 1971-09-06 1973-04-27 Philips Nv
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3420719A (en) * 1965-05-27 1969-01-07 Ibm Method of making semiconductors by laser induced diffusion
US3461547A (en) * 1965-07-13 1969-08-19 United Aircraft Corp Process for making and testing semiconductive devices
JPS5130437B1 (fr) * 1970-03-25 1976-09-01
US3765961A (en) * 1971-02-12 1973-10-16 Bell Telephone Labor Inc Special masking method of fabricating a planar avalanche transistor
FR2228299B1 (fr) * 1973-05-04 1977-09-02 Radiotechnique Compelec
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US4082958A (en) * 1975-11-28 1978-04-04 Simulation Physics, Inc. Apparatus involving pulsed electron beam processing of semiconductor devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1194049A (en) * 1966-12-30 1970-06-10 Texas Instruments Inc Method of Making a Junction in a Semiconductor Body
FR2090238A1 (fr) * 1970-05-22 1972-01-14 Philips Nv
US3725148A (en) * 1970-08-31 1973-04-03 D Kendall Individual device tuning using localized solid-state reactions
FR2152656A1 (fr) * 1971-09-06 1973-04-27 Philips Nv
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ABJP/78 *

Also Published As

Publication number Publication date
GB2038551A (en) 1980-07-23
JPS55108776A (en) 1980-08-21
CA1136774A (fr) 1982-11-30
US4203781A (en) 1980-05-20
DE2951733A1 (de) 1980-07-10

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Legal Events

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