FR2152656A1 - - Google Patents

Info

Publication number
FR2152656A1
FR2152656A1 FR7231533A FR7231533A FR2152656A1 FR 2152656 A1 FR2152656 A1 FR 2152656A1 FR 7231533 A FR7231533 A FR 7231533A FR 7231533 A FR7231533 A FR 7231533A FR 2152656 A1 FR2152656 A1 FR 2152656A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7231533A
Other versions
FR2152656B1 (fr
Inventor
J Shannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB4146271A external-priority patent/GB1401276A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2152656A1 publication Critical patent/FR2152656A1/fr
Application granted granted Critical
Publication of FR2152656B1 publication Critical patent/FR2152656B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7231533A 1971-09-06 1972-09-06 Expired FR2152656B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4146271A GB1401276A (en) 1970-05-22 1971-09-06 Methods of manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
FR2152656A1 true FR2152656A1 (fr) 1973-04-27
FR2152656B1 FR2152656B1 (fr) 1976-08-13

Family

ID=10419801

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7231533A Expired FR2152656B1 (fr) 1971-09-06 1972-09-06

Country Status (5)

Country Link
US (1) US3841917A (fr)
CA (1) CA970078A (fr)
DE (1) DE2243592A1 (fr)
FR (1) FR2152656B1 (fr)
NL (1) NL7212006A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445619A1 (fr) * 1978-12-27 1980-07-25 Western Electric Co Procede de fabrication d'un dispositif a semi-conducteurs
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4041517A (en) * 1974-09-04 1977-08-09 Tokyo Shibaura Electric Co., Ltd. Vertical type junction field effect semiconductor device
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4757029A (en) * 1987-05-04 1988-07-12 Motorola Inc. Method of making vertical field effect transistor with plurality of gate input cnnections
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
JP3504079B2 (ja) * 1996-08-31 2004-03-08 株式会社東芝 半導体発光ダイオード素子の製造方法
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
EP1139409A3 (fr) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Recuit selectif par laser d'un materiau semiconducteur
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
DE102004018153B9 (de) * 2004-04-08 2012-08-23 Austriamicrosystems Ag Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US8481380B2 (en) * 2010-09-23 2013-07-09 International Business Machines Corporation Asymmetric wedge JFET, related method and design structure
CN104701370A (zh) * 2013-12-06 2015-06-10 上海华虹宏力半导体制造有限公司 稳流管及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3298880A (en) * 1962-08-24 1967-01-17 Hitachi Ltd Method of producing semiconductor devices
US3560277A (en) * 1968-01-15 1971-02-02 Ibm Process for making semiconductor bodies having power connections internal thereto
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
US3734787A (en) * 1970-01-09 1973-05-22 Ibm Fabrication of diffused junction capacitor by simultaneous outdiffusion

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445619A1 (fr) * 1978-12-27 1980-07-25 Western Electric Co Procede de fabrication d'un dispositif a semi-conducteurs
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions

Also Published As

Publication number Publication date
NL7212006A (fr) 1973-03-08
US3841917A (en) 1974-10-15
FR2152656B1 (fr) 1976-08-13
DE2243592A1 (de) 1973-03-08
CA970078A (en) 1975-06-24

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Legal Events

Date Code Title Description
ST Notification of lapse