PL117693B1 - Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem - Google Patents
Semiconductor device adapted to be switched over by voltage fadingm naprjazheniemInfo
- Publication number
- PL117693B1 PL117693B1 PL1977201799A PL20179977A PL117693B1 PL 117693 B1 PL117693 B1 PL 117693B1 PL 1977201799 A PL1977201799 A PL 1977201799A PL 20179977 A PL20179977 A PL 20179977A PL 117693 B1 PL117693 B1 PL 117693B1
- Authority
- PL
- Poland
- Prior art keywords
- area
- region
- emitter
- thyristor
- switching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 230000000977 initiatory effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000012141 concentrate Substances 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73679576A | 1976-10-29 | 1976-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL201799A1 PL201799A1 (pl) | 1978-05-08 |
| PL117693B1 true PL117693B1 (en) | 1981-08-31 |
Family
ID=24961330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1977201799A PL117693B1 (en) | 1976-10-29 | 1977-10-28 | Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5356979A ( ) |
| AU (1) | AU516308B2 ( ) |
| BE (1) | BE859992A ( ) |
| BR (1) | BR7707015A ( ) |
| CA (1) | CA1104726A ( ) |
| DE (1) | DE2748528A1 ( ) |
| FR (1) | FR2393432A1 ( ) |
| GB (1) | GB1592877A ( ) |
| HK (1) | HK64384A ( ) |
| IN (1) | IN148845B ( ) |
| PL (1) | PL117693B1 ( ) |
| SE (1) | SE7712091L ( ) |
| ZA (1) | ZA775629B ( ) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3000804A1 (de) * | 1980-01-11 | 1981-07-16 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer |
| JPS5935689U (ja) * | 1982-08-30 | 1984-03-06 | 株式会社東芝 | 冷凍サイクル装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| FR2144581B1 ( ) * | 1971-07-06 | 1976-03-19 | Silec Semi Conducteurs | |
| DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
| DE2210386A1 (de) * | 1972-03-03 | 1973-09-06 | Siemens Ag | Thyristor |
| GB1425651A (en) * | 1972-04-03 | 1976-02-18 | Motorola Inc | Channel firing thyristor |
| DE2346256C3 (de) * | 1973-09-13 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
| JPS5413959B2 ( ) * | 1973-10-17 | 1979-06-04 | ||
| JPS5927108B2 (ja) * | 1975-02-07 | 1984-07-03 | 株式会社日立製作所 | 半導体制御整流装置 |
-
1977
- 1977-09-20 ZA ZA00775629A patent/ZA775629B/xx unknown
- 1977-09-23 IN IN1434/CAL/77A patent/IN148845B/en unknown
- 1977-10-03 CA CA287,988A patent/CA1104726A/en not_active Expired
- 1977-10-13 GB GB42646/77A patent/GB1592877A/en not_active Expired
- 1977-10-14 AU AU29741/77A patent/AU516308B2/en not_active Expired
- 1977-10-20 BR BR7707015A patent/BR7707015A/pt unknown
- 1977-10-21 BE BE181962A patent/BE859992A/xx not_active IP Right Cessation
- 1977-10-25 FR FR7732103A patent/FR2393432A1/fr active Granted
- 1977-10-27 SE SE7712091A patent/SE7712091L/ not_active Application Discontinuation
- 1977-10-28 JP JP12883177A patent/JPS5356979A/ja active Granted
- 1977-10-28 PL PL1977201799A patent/PL117693B1/pl unknown
- 1977-10-28 DE DE19772748528 patent/DE2748528A1/de not_active Withdrawn
-
1984
- 1984-08-16 HK HK643/84A patent/HK64384A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE859992A (fr) | 1978-04-21 |
| JPS5649459B2 ( ) | 1981-11-21 |
| HK64384A (en) | 1984-08-24 |
| ZA775629B (en) | 1978-08-30 |
| DE2748528A1 (de) | 1978-05-03 |
| CA1104726A (en) | 1981-07-07 |
| FR2393432B1 ( ) | 1983-08-26 |
| FR2393432A1 (fr) | 1978-12-29 |
| JPS5356979A (en) | 1978-05-23 |
| BR7707015A (pt) | 1978-07-18 |
| SE7712091L (sv) | 1978-04-30 |
| IN148845B ( ) | 1981-06-27 |
| GB1592877A (en) | 1981-07-08 |
| AU2974177A (en) | 1979-04-26 |
| AU516308B2 (en) | 1981-05-28 |
| PL201799A1 (pl) | 1978-05-08 |
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