GB1592877A - Thyristor fired by collapsing voltage - Google Patents
Thyristor fired by collapsing voltage Download PDFInfo
- Publication number
- GB1592877A GB1592877A GB42646/77A GB4264677A GB1592877A GB 1592877 A GB1592877 A GB 1592877A GB 42646/77 A GB42646/77 A GB 42646/77A GB 4264677 A GB4264677 A GB 4264677A GB 1592877 A GB1592877 A GB 1592877A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- thyristor
- switching
- voltage
- equals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000977 initiatory effect Effects 0.000 claims description 21
- 238000010304 firing Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000006073 displacement reaction Methods 0.000 claims description 11
- 230000008901 benefit Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73679576A | 1976-10-29 | 1976-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1592877A true GB1592877A (en) | 1981-07-08 |
Family
ID=24961330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB42646/77A Expired GB1592877A (en) | 1976-10-29 | 1977-10-13 | Thyristor fired by collapsing voltage |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5356979A ( ) |
| AU (1) | AU516308B2 ( ) |
| BE (1) | BE859992A ( ) |
| BR (1) | BR7707015A ( ) |
| CA (1) | CA1104726A ( ) |
| DE (1) | DE2748528A1 ( ) |
| FR (1) | FR2393432A1 ( ) |
| GB (1) | GB1592877A ( ) |
| HK (1) | HK64384A ( ) |
| IN (1) | IN148845B ( ) |
| PL (1) | PL117693B1 ( ) |
| SE (1) | SE7712091L ( ) |
| ZA (1) | ZA775629B ( ) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3000804A1 (de) * | 1980-01-11 | 1981-07-16 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer |
| JPS5935689U (ja) * | 1982-08-30 | 1984-03-06 | 株式会社東芝 | 冷凍サイクル装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| FR2144581B1 ( ) * | 1971-07-06 | 1976-03-19 | Silec Semi Conducteurs | |
| DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
| DE2210386A1 (de) * | 1972-03-03 | 1973-09-06 | Siemens Ag | Thyristor |
| GB1425651A (en) * | 1972-04-03 | 1976-02-18 | Motorola Inc | Channel firing thyristor |
| DE2346256C3 (de) * | 1973-09-13 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
| JPS5413959B2 ( ) * | 1973-10-17 | 1979-06-04 | ||
| JPS5927108B2 (ja) * | 1975-02-07 | 1984-07-03 | 株式会社日立製作所 | 半導体制御整流装置 |
-
1977
- 1977-09-20 ZA ZA00775629A patent/ZA775629B/xx unknown
- 1977-09-23 IN IN1434/CAL/77A patent/IN148845B/en unknown
- 1977-10-03 CA CA287,988A patent/CA1104726A/en not_active Expired
- 1977-10-13 GB GB42646/77A patent/GB1592877A/en not_active Expired
- 1977-10-14 AU AU29741/77A patent/AU516308B2/en not_active Expired
- 1977-10-20 BR BR7707015A patent/BR7707015A/pt unknown
- 1977-10-21 BE BE181962A patent/BE859992A/xx not_active IP Right Cessation
- 1977-10-25 FR FR7732103A patent/FR2393432A1/fr active Granted
- 1977-10-27 SE SE7712091A patent/SE7712091L/ not_active Application Discontinuation
- 1977-10-28 PL PL1977201799A patent/PL117693B1/pl unknown
- 1977-10-28 DE DE19772748528 patent/DE2748528A1/de not_active Withdrawn
- 1977-10-28 JP JP12883177A patent/JPS5356979A/ja active Granted
-
1984
- 1984-08-16 HK HK643/84A patent/HK64384A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL117693B1 (en) | 1981-08-31 |
| FR2393432A1 (fr) | 1978-12-29 |
| SE7712091L (sv) | 1978-04-30 |
| FR2393432B1 ( ) | 1983-08-26 |
| BR7707015A (pt) | 1978-07-18 |
| AU516308B2 (en) | 1981-05-28 |
| PL201799A1 (pl) | 1978-05-08 |
| CA1104726A (en) | 1981-07-07 |
| ZA775629B (en) | 1978-08-30 |
| BE859992A (fr) | 1978-04-21 |
| JPS5649459B2 ( ) | 1981-11-21 |
| DE2748528A1 (de) | 1978-05-03 |
| AU2974177A (en) | 1979-04-26 |
| HK64384A (en) | 1984-08-24 |
| JPS5356979A (en) | 1978-05-23 |
| IN148845B ( ) | 1981-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921013 |