AU516308B2 - Thyristor fired by collapsing voltage - Google Patents

Thyristor fired by collapsing voltage

Info

Publication number
AU516308B2
AU516308B2 AU29741/77A AU2974177A AU516308B2 AU 516308 B2 AU516308 B2 AU 516308B2 AU 29741/77 A AU29741/77 A AU 29741/77A AU 2974177 A AU2974177 A AU 2974177A AU 516308 B2 AU516308 B2 AU 516308B2
Authority
AU
Australia
Prior art keywords
thyristor
fired
collapsing
voltage
collapsing voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU29741/77A
Other languages
English (en)
Other versions
AU2974177A (en
Inventor
M H. and Schlegel E. S Hanes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of AU2974177A publication Critical patent/AU2974177A/en
Application granted granted Critical
Publication of AU516308B2 publication Critical patent/AU516308B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
AU29741/77A 1976-10-29 1977-10-14 Thyristor fired by collapsing voltage Expired AU516308B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73679576A 1976-10-29 1976-10-29
USUS736795 1976-10-29

Publications (2)

Publication Number Publication Date
AU2974177A AU2974177A (en) 1979-04-26
AU516308B2 true AU516308B2 (en) 1981-05-28

Family

ID=24961330

Family Applications (1)

Application Number Title Priority Date Filing Date
AU29741/77A Expired AU516308B2 (en) 1976-10-29 1977-10-14 Thyristor fired by collapsing voltage

Country Status (13)

Country Link
JP (1) JPS5356979A ( )
AU (1) AU516308B2 ( )
BE (1) BE859992A ( )
BR (1) BR7707015A ( )
CA (1) CA1104726A ( )
DE (1) DE2748528A1 ( )
FR (1) FR2393432A1 ( )
GB (1) GB1592877A ( )
HK (1) HK64384A ( )
IN (1) IN148845B ( )
PL (1) PL117693B1 ( )
SE (1) SE7712091L ( )
ZA (1) ZA775629B ( )

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000804A1 (de) * 1980-01-11 1981-07-16 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer
JPS5935689U (ja) * 1982-08-30 1984-03-06 株式会社東芝 冷凍サイクル装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
FR2144581B1 ( ) * 1971-07-06 1976-03-19 Silec Semi Conducteurs
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2210386A1 (de) * 1972-03-03 1973-09-06 Siemens Ag Thyristor
GB1425651A (en) * 1972-04-03 1976-02-18 Motorola Inc Channel firing thyristor
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS5413959B2 ( ) * 1973-10-17 1979-06-04
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置

Also Published As

Publication number Publication date
PL117693B1 (en) 1981-08-31
FR2393432A1 (fr) 1978-12-29
SE7712091L (sv) 1978-04-30
FR2393432B1 ( ) 1983-08-26
GB1592877A (en) 1981-07-08
BR7707015A (pt) 1978-07-18
PL201799A1 (pl) 1978-05-08
CA1104726A (en) 1981-07-07
ZA775629B (en) 1978-08-30
BE859992A (fr) 1978-04-21
JPS5649459B2 ( ) 1981-11-21
DE2748528A1 (de) 1978-05-03
AU2974177A (en) 1979-04-26
HK64384A (en) 1984-08-24
JPS5356979A (en) 1978-05-23
IN148845B ( ) 1981-06-27

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