PL201799A1 - Przyrzad polprzewodnikowy przelaczany zanikajacym napieciem - Google Patents
Przyrzad polprzewodnikowy przelaczany zanikajacym napieciemInfo
- Publication number
- PL201799A1 PL201799A1 PL20179977A PL20179977A PL201799A1 PL 201799 A1 PL201799 A1 PL 201799A1 PL 20179977 A PL20179977 A PL 20179977A PL 20179977 A PL20179977 A PL 20179977A PL 201799 A1 PL201799 A1 PL 201799A1
- Authority
- PL
- Poland
- Prior art keywords
- circuit device
- voltage change
- fade
- fade voltage
- change
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73679576A | 1976-10-29 | 1976-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL201799A1 true PL201799A1 (pl) | 1978-05-08 |
| PL117693B1 PL117693B1 (en) | 1981-08-31 |
Family
ID=24961330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1977201799A PL117693B1 (en) | 1976-10-29 | 1977-10-28 | Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5356979A (pl) |
| AU (1) | AU516308B2 (pl) |
| BE (1) | BE859992A (pl) |
| BR (1) | BR7707015A (pl) |
| CA (1) | CA1104726A (pl) |
| DE (1) | DE2748528A1 (pl) |
| FR (1) | FR2393432A1 (pl) |
| GB (1) | GB1592877A (pl) |
| HK (1) | HK64384A (pl) |
| IN (1) | IN148845B (pl) |
| PL (1) | PL117693B1 (pl) |
| SE (1) | SE7712091L (pl) |
| ZA (1) | ZA775629B (pl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3000804A1 (de) * | 1980-01-11 | 1981-07-16 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer |
| JPS5935689U (ja) * | 1982-08-30 | 1984-03-06 | 株式会社東芝 | 冷凍サイクル装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| FR2144581B1 (pl) * | 1971-07-06 | 1976-03-19 | Silec Semi Conducteurs | |
| DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
| DE2210386A1 (de) * | 1972-03-03 | 1973-09-06 | Siemens Ag | Thyristor |
| GB1425651A (en) * | 1972-04-03 | 1976-02-18 | Motorola Inc | Channel firing thyristor |
| DE2346256C3 (de) * | 1973-09-13 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
| JPS5413959B2 (pl) * | 1973-10-17 | 1979-06-04 | ||
| JPS5927108B2 (ja) * | 1975-02-07 | 1984-07-03 | 株式会社日立製作所 | 半導体制御整流装置 |
-
1977
- 1977-09-20 ZA ZA00775629A patent/ZA775629B/xx unknown
- 1977-09-23 IN IN1434/CAL/77A patent/IN148845B/en unknown
- 1977-10-03 CA CA287,988A patent/CA1104726A/en not_active Expired
- 1977-10-13 GB GB42646/77A patent/GB1592877A/en not_active Expired
- 1977-10-14 AU AU29741/77A patent/AU516308B2/en not_active Expired
- 1977-10-20 BR BR7707015A patent/BR7707015A/pt unknown
- 1977-10-21 BE BE181962A patent/BE859992A/xx not_active IP Right Cessation
- 1977-10-25 FR FR7732103A patent/FR2393432A1/fr active Granted
- 1977-10-27 SE SE7712091A patent/SE7712091L/ not_active Application Discontinuation
- 1977-10-28 DE DE19772748528 patent/DE2748528A1/de not_active Withdrawn
- 1977-10-28 PL PL1977201799A patent/PL117693B1/pl unknown
- 1977-10-28 JP JP12883177A patent/JPS5356979A/ja active Granted
-
1984
- 1984-08-16 HK HK643/84A patent/HK64384A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2974177A (en) | 1979-04-26 |
| PL117693B1 (en) | 1981-08-31 |
| AU516308B2 (en) | 1981-05-28 |
| IN148845B (pl) | 1981-06-27 |
| CA1104726A (en) | 1981-07-07 |
| BE859992A (fr) | 1978-04-21 |
| SE7712091L (sv) | 1978-04-30 |
| DE2748528A1 (de) | 1978-05-03 |
| FR2393432A1 (fr) | 1978-12-29 |
| HK64384A (en) | 1984-08-24 |
| GB1592877A (en) | 1981-07-08 |
| FR2393432B1 (pl) | 1983-08-26 |
| JPS5356979A (en) | 1978-05-23 |
| JPS5649459B2 (pl) | 1981-11-21 |
| ZA775629B (en) | 1978-08-30 |
| BR7707015A (pt) | 1978-07-18 |
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| PL201799A1 (pl) | Przyrzad polprzewodnikowy przelaczany zanikajacym napieciem |